JP7717721B2 - 炭素材料、金属有機化合物および溶媒を含んでなるスピンコーティング組成物、および基板の上方への金属酸化物膜の製造方法 - Google Patents

炭素材料、金属有機化合物および溶媒を含んでなるスピンコーティング組成物、および基板の上方への金属酸化物膜の製造方法

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Publication number
JP7717721B2
JP7717721B2 JP2022562600A JP2022562600A JP7717721B2 JP 7717721 B2 JP7717721 B2 JP 7717721B2 JP 2022562600 A JP2022562600 A JP 2022562600A JP 2022562600 A JP2022562600 A JP 2022562600A JP 7717721 B2 JP7717721 B2 JP 7717721B2
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Prior art keywords
coating composition
solvent
alkyl
spin coating
formula
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JP2022562600A
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Japanese (ja)
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JP2023521230A5 (https=
JP2023521230A (ja
Inventor
高志 關藤
ジュンヨン、チョ
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Merck Patent GmbH
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Merck Patent GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0025—Devices or apparatus characterised by means for coating the developer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • G03F7/0027—Devices or apparatus characterised by pressure means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2022562600A 2020-04-17 2021-04-14 炭素材料、金属有機化合物および溶媒を含んでなるスピンコーティング組成物、および基板の上方への金属酸化物膜の製造方法 Active JP7717721B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063011589P 2020-04-17 2020-04-17
US63/011,589 2020-04-17
PCT/EP2021/059603 WO2021209476A1 (en) 2020-04-17 2021-04-14 A spin coating composition comprising a carbon material, a metal organic compound, and solvent, and a manufacturing method of a metal oxide film above a substrate

Publications (3)

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JP2023521230A JP2023521230A (ja) 2023-05-23
JP2023521230A5 JP2023521230A5 (https=) 2025-06-27
JP7717721B2 true JP7717721B2 (ja) 2025-08-04

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Country Status (7)

Country Link
US (1) US20230236509A1 (https=)
EP (1) EP4136508A1 (https=)
JP (1) JP7717721B2 (https=)
KR (1) KR102948556B1 (https=)
CN (1) CN115427890A (https=)
TW (1) TWI895397B (https=)
WO (1) WO2021209476A1 (https=)

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JP7805883B2 (ja) * 2022-07-08 2026-01-26 信越化学工業株式会社 金属酸化膜形成用組成物、パターン形成方法、及び金属酸化膜形成方法
JP2024068637A (ja) * 2022-11-08 2024-05-20 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024091495A (ja) * 2022-12-22 2024-07-04 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024097388A (ja) * 2023-01-06 2024-07-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2024122656A (ja) * 2023-02-28 2024-09-09 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
IL311277A (en) * 2023-03-13 2024-10-01 Shinetsu Chemical Co A method for creating a bottom masking layer and a printing process
EP4435516A1 (en) * 2023-03-16 2024-09-25 Shin-Etsu Chemical Co., Ltd. Method for forming resist underlayer film and patterning process
JP2024175717A (ja) * 2023-06-07 2024-12-19 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、金属含有膜形成用化合物の製造方法、及びパターン形成方法
JP2025011028A (ja) * 2023-07-10 2025-01-23 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、パターン形成方法、及び金属含有膜形成用化合物の製造方法
JP2025032875A (ja) * 2023-08-28 2025-03-12 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法
JP2025032887A (ja) 2023-08-28 2025-03-12 信越化学工業株式会社 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法

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KR102513862B1 (ko) * 2018-06-01 2023-03-23 최상준 반사방지용 하드마스크 조성물
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JP2010271654A (ja) 2009-05-25 2010-12-02 Shin-Etsu Chemical Co Ltd レジスト下層膜材料及びこれを用いたパターン形成方法
JP2018507933A (ja) 2015-02-11 2018-03-22 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ハードマスク組成物および半導体基板上での微細パターンの形成方法
WO2019048393A1 (en) 2017-09-06 2019-03-14 AZ Electronic Materials (Luxembourg) S.à.r.l. AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY

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EP4136508A1 (en) 2023-02-22
KR102948556B1 (ko) 2026-04-03
KR20230007391A (ko) 2023-01-12
CN115427890A (zh) 2022-12-02
TWI895397B (zh) 2025-09-01
JP2023521230A (ja) 2023-05-23
WO2021209476A1 (en) 2021-10-21
TW202204539A (zh) 2022-02-01
US20230236509A1 (en) 2023-07-27

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