JP7697017B2 - 透明基板を有するウエハ上に電子ビームを集束させる方法 - Google Patents

透明基板を有するウエハ上に電子ビームを集束させる方法 Download PDF

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JP7697017B2
JP7697017B2 JP2023546303A JP2023546303A JP7697017B2 JP 7697017 B2 JP7697017 B2 JP 7697017B2 JP 2023546303 A JP2023546303 A JP 2023546303A JP 2023546303 A JP2023546303 A JP 2023546303A JP 7697017 B2 JP7697017 B2 JP 7697017B2
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wafer
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area
height
electron beam
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JP2024507705A5 (enExample
JP2024507705A (ja
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アリエ バーダー
タミール ヌナ
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アプライド マテリアルズ イスラエル リミテッド
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/66—Specific applications or type of materials multiple steps inspection, e.g. coarse/fine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2023546303A 2021-02-01 2022-02-01 透明基板を有するウエハ上に電子ビームを集束させる方法 Active JP7697017B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/164,803 2021-02-01
US17/164,803 US11378531B1 (en) 2021-02-01 2021-02-01 Method for focusing an electron beam on a wafer having a transparent substrate
PCT/US2022/014669 WO2022165400A1 (en) 2021-02-01 2022-02-01 A method for focusing an electron beam on a wafer having a transparent substrate

Publications (3)

Publication Number Publication Date
JP2024507705A JP2024507705A (ja) 2024-02-21
JP2024507705A5 JP2024507705A5 (enExample) 2024-12-10
JP7697017B2 true JP7697017B2 (ja) 2025-06-23

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JP2023546303A Active JP7697017B2 (ja) 2021-02-01 2022-02-01 透明基板を有するウエハ上に電子ビームを集束させる方法

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Country Link
US (1) US11378531B1 (enExample)
EP (1) EP4285114A4 (enExample)
JP (1) JP7697017B2 (enExample)
KR (1) KR20230166073A (enExample)
CN (1) CN117321412A (enExample)
TW (1) TWI894429B (enExample)
WO (1) WO2022165400A1 (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002090311A (ja) 2000-09-18 2002-03-27 Hitachi Ltd 欠陥検査装置
JP2003037157A (ja) 2001-07-26 2003-02-07 Canon Inc 基板保持装置、露光装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法
JP2004214653A (ja) 2002-12-20 2004-07-29 Asml Netherlands Bv リソグラフ装置、デバイス製造方法、および基板ホルダー

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JPH0444210A (ja) * 1990-06-07 1992-02-14 Canon Inc ガラスウェーハー及び該ガラスウェーハーの面位置検出方法
JP3180229B2 (ja) * 1992-03-31 2001-06-25 キヤノン株式会社 自動焦点合わせ装置
JP3101539B2 (ja) * 1994-06-24 2000-10-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 電子線ナノメトロジー・システム
JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US6107637A (en) 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
DE60217587D1 (de) 2001-07-26 2007-03-08 Canon Kk Substrathalter und ein Belichtungsapparat
US6670610B2 (en) 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
KR20040012404A (ko) * 2002-08-03 2004-02-11 삼성전자주식회사 웨이퍼의 이면을 검사하는 장비에 채용되는 웨이퍼 지지체
JP4734101B2 (ja) * 2005-11-30 2011-07-27 株式会社ディスコ レーザー加工装置
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US7994476B2 (en) * 2007-11-05 2011-08-09 Applied Materials Israel, Ltd. Apparatus and method for enhancing voltage contrast of a wafer
JP5117920B2 (ja) * 2008-04-28 2013-01-16 株式会社ディスコ レーザー加工装置
US20090309022A1 (en) 2008-06-12 2009-12-17 Hitachi High-Technologies Corporation Apparatus for inspecting a substrate, a method of inspecting a substrate, a scanning electron microscope, and a method of producing an image using a scanning electron microscope
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
JP2011122894A (ja) * 2009-12-09 2011-06-23 Disco Abrasive Syst Ltd チャックテーブルに保持された被加工物の計測装置およびレーザー加工機
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JP2002090311A (ja) 2000-09-18 2002-03-27 Hitachi Ltd 欠陥検査装置
JP2003037157A (ja) 2001-07-26 2003-02-07 Canon Inc 基板保持装置、露光装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法
JP2004214653A (ja) 2002-12-20 2004-07-29 Asml Netherlands Bv リソグラフ装置、デバイス製造方法、および基板ホルダー

Also Published As

Publication number Publication date
WO2022165400A1 (en) 2022-08-04
US11378531B1 (en) 2022-07-05
TW202249088A (zh) 2022-12-16
EP4285114A4 (en) 2025-07-09
JP2024507705A (ja) 2024-02-21
TWI894429B (zh) 2025-08-21
CN117321412A (zh) 2023-12-29
KR20230166073A (ko) 2023-12-06
EP4285114A1 (en) 2023-12-06

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