TWI894429B - 用於將電子束聚焦在具有透明基板的晶圓上的方法 - Google Patents

用於將電子束聚焦在具有透明基板的晶圓上的方法

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Publication number
TWI894429B
TWI894429B TW111103982A TW111103982A TWI894429B TW I894429 B TWI894429 B TW I894429B TW 111103982 A TW111103982 A TW 111103982A TW 111103982 A TW111103982 A TW 111103982A TW I894429 B TWI894429 B TW I894429B
Authority
TW
Taiwan
Prior art keywords
wafer
height
electron beam
area
fixture
Prior art date
Application number
TW111103982A
Other languages
English (en)
Chinese (zh)
Other versions
TW202249088A (zh
Inventor
阿里 巴德
塔米爾 努那
Original Assignee
以色列商應用材料以色列公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 以色列商應用材料以色列公司 filed Critical 以色列商應用材料以色列公司
Publication of TW202249088A publication Critical patent/TW202249088A/zh
Application granted granted Critical
Publication of TWI894429B publication Critical patent/TWI894429B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2206—Combination of two or more measurements, at least one measurement being that of secondary emission, e.g. combination of secondary electron [SE] measurement and back-scattered electron [BSE] measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/071—Investigating materials by wave or particle radiation secondary emission combination of measurements, at least 1 secondary emission
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/10—Different kinds of radiation or particles
    • G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/633—Specific applications or type of materials thickness, density, surface weight (unit area)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/646—Specific applications or type of materials flaws, defects
    • G01N2223/6462—Specific applications or type of materials flaws, defects microdefects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/66—Specific applications or type of materials multiple steps inspection, e.g. coarse/fine
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H01J2237/216—Automatic focusing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW111103982A 2021-02-01 2022-01-28 用於將電子束聚焦在具有透明基板的晶圓上的方法 TWI894429B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/164,803 2021-02-01
US17/164,803 US11378531B1 (en) 2021-02-01 2021-02-01 Method for focusing an electron beam on a wafer having a transparent substrate

Publications (2)

Publication Number Publication Date
TW202249088A TW202249088A (zh) 2022-12-16
TWI894429B true TWI894429B (zh) 2025-08-21

Family

ID=82261422

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111103982A TWI894429B (zh) 2021-02-01 2022-01-28 用於將電子束聚焦在具有透明基板的晶圓上的方法

Country Status (7)

Country Link
US (1) US11378531B1 (enExample)
EP (1) EP4285114A4 (enExample)
JP (1) JP7697017B2 (enExample)
KR (1) KR20230166073A (enExample)
CN (1) CN117321412A (enExample)
TW (1) TWI894429B (enExample)
WO (1) WO2022165400A1 (enExample)

Citations (3)

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JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US20090266802A1 (en) * 2008-04-28 2009-10-29 Disco Corporation Laser processing apparatus
TW202030762A (zh) * 2019-01-21 2020-08-16 德商卡爾蔡司Ｓｍｔ有限公司 用於決定元件在光微影遮罩上之位置的裝置與方法

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JPH0444210A (ja) * 1990-06-07 1992-02-14 Canon Inc ガラスウェーハー及び該ガラスウェーハーの面位置検出方法
JP3180229B2 (ja) * 1992-03-31 2001-06-25 キヤノン株式会社 自動焦点合わせ装置
JP3101539B2 (ja) * 1994-06-24 2000-10-23 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 電子線ナノメトロジー・システム
US6107637A (en) 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
JP3630624B2 (ja) 2000-09-18 2005-03-16 株式会社日立製作所 欠陥検査装置および欠陥検査方法
DE60217587D1 (de) 2001-07-26 2007-03-08 Canon Kk Substrathalter und ein Belichtungsapparat
JP2003037157A (ja) 2001-07-26 2003-02-07 Canon Inc 基板保持装置、露光装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法
US6670610B2 (en) 2001-11-26 2003-12-30 Applied Materials, Inc. System and method for directing a miller
KR20040012404A (ko) * 2002-08-03 2004-02-11 삼성전자주식회사 웨이퍼의 이면을 검사하는 장비에 채용되는 웨이퍼 지지체
EP1431825A1 (en) 2002-12-20 2004-06-23 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and substrate holder
JP4734101B2 (ja) * 2005-11-30 2011-07-27 株式会社ディスコ レーザー加工装置
US8709269B2 (en) 2007-08-22 2014-04-29 Applied Materials Israel, Ltd. Method and system for imaging a cross section of a specimen
US7994476B2 (en) * 2007-11-05 2011-08-09 Applied Materials Israel, Ltd. Apparatus and method for enhancing voltage contrast of a wafer
US20090309022A1 (en) 2008-06-12 2009-12-17 Hitachi High-Technologies Corporation Apparatus for inspecting a substrate, a method of inspecting a substrate, a scanning electron microscope, and a method of producing an image using a scanning electron microscope
JP2010080144A (ja) * 2008-09-25 2010-04-08 Lasertec Corp 複合型顕微鏡装置及び試料観察方法
JP2011122894A (ja) * 2009-12-09 2011-06-23 Disco Abrasive Syst Ltd チャックテーブルに保持された被加工物の計測装置およびレーザー加工機
US8791414B2 (en) * 2010-04-21 2014-07-29 Hermes Microvision, Inc. Dynamic focus adjustment with optical height detection apparatus in electron beam system
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US9958257B2 (en) * 2015-09-21 2018-05-01 Kla-Tencor Corporation Increasing dynamic range of a height sensor for inspection and metrology
NL2018857B1 (en) * 2017-05-05 2018-11-09 Illumina Inc Systems and methods for improved focus tracking using a light source configuration
CN110770653B (zh) 2017-06-08 2024-05-03 Asml荷兰有限公司 用于测量对准的系统和方法
JP7189026B2 (ja) * 2019-01-07 2022-12-13 株式会社ディスコ 被加工物の加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11250847A (ja) * 1998-02-27 1999-09-17 Hitachi Ltd 収束荷電粒子線装置およびそれを用いた検査方法
US20090266802A1 (en) * 2008-04-28 2009-10-29 Disco Corporation Laser processing apparatus
TW202030762A (zh) * 2019-01-21 2020-08-16 德商卡爾蔡司Ｓｍｔ有限公司 用於決定元件在光微影遮罩上之位置的裝置與方法

Also Published As

Publication number Publication date
WO2022165400A1 (en) 2022-08-04
JP7697017B2 (ja) 2025-06-23
US11378531B1 (en) 2022-07-05
TW202249088A (zh) 2022-12-16
EP4285114A4 (en) 2025-07-09
JP2024507705A (ja) 2024-02-21
CN117321412A (zh) 2023-12-29
KR20230166073A (ko) 2023-12-06
EP4285114A1 (en) 2023-12-06

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