JP7675707B2 - 熱検出器 - Google Patents

熱検出器 Download PDF

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Publication number
JP7675707B2
JP7675707B2 JP2022516624A JP2022516624A JP7675707B2 JP 7675707 B2 JP7675707 B2 JP 7675707B2 JP 2022516624 A JP2022516624 A JP 2022516624A JP 2022516624 A JP2022516624 A JP 2022516624A JP 7675707 B2 JP7675707 B2 JP 7675707B2
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Japan
Prior art keywords
light absorbing
layer
detector
thermoelectric
absorbing film
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JP2022516624A
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English (en)
Japanese (ja)
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JP2022548263A (ja
JP2022548263A5 (enExample
Inventor
ヴァープラ，アーポ
チイラ，ジョンナ
タップラ，キルシー
ケーストゥティス，グリゴラス
プルッニラ，ミカ
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VTT Technical Research Centre of Finland Ltd
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VTT Technical Research Centre of Finland Ltd
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Publication of JP2022548263A5 publication Critical patent/JP2022548263A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2022516624A 2019-09-16 2020-09-11 熱検出器 Active JP7675707B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20195772 2019-09-16
FI20195772A FI20195772A1 (en) 2019-09-16 2019-09-16 Thermal detector
PCT/FI2020/050582 WO2021053267A1 (en) 2019-09-16 2020-09-11 Thermal detector

Publications (3)

Publication Number Publication Date
JP2022548263A JP2022548263A (ja) 2022-11-17
JP2022548263A5 JP2022548263A5 (enExample) 2023-04-28
JP7675707B2 true JP7675707B2 (ja) 2025-05-13

Family

ID=72644269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022516624A Active JP7675707B2 (ja) 2019-09-16 2020-09-11 熱検出器

Country Status (6)

Country Link
US (1) US20220344561A1 (enExample)
EP (1) EP4031843A1 (enExample)
JP (1) JP7675707B2 (enExample)
CN (2) CN119901378A (enExample)
FI (1) FI20195772A1 (enExample)
WO (1) WO2021053267A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI130930B1 (fi) 2021-08-02 2024-05-31 Teknologian Tutkimuskeskus Vtt Oy Laite ei-invasiiviseen seurantaan
CN118251583A (zh) * 2021-11-16 2024-06-25 迈瑞迪创新科技有限公司 具有高cmos集成度的高灵敏度热电基红外探测器
WO2024263494A2 (en) * 2023-06-23 2024-12-26 The Regents Of The University Of California Holey silicon-based thermopiles for high-sensitivity broadband thermal detection

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007024842A (ja) 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 赤外線センサ
JP2008082790A (ja) 2006-09-26 2008-04-10 Matsushita Electric Works Ltd 赤外線センサ
JP2009175124A (ja) 2007-12-27 2009-08-06 Rohm Co Ltd プラズモン共鳴検出器
US20100031992A1 (en) 2006-05-30 2010-02-11 Ying Hsu Large format thermoelectric infrared detector and method of fabrication
JP2012058212A (ja) 2010-09-13 2012-03-22 Toshiba Corp 赤外線検出素子
JP2013051232A (ja) 2011-08-30 2013-03-14 Panasonic Corp 熱電変換デバイス
JP2013186038A (ja) 2012-03-09 2013-09-19 Panasonic Corp 赤外線検出装置
JP2015075385A (ja) 2013-10-08 2015-04-20 パナソニックＩｐマネジメント株式会社 赤外線検出器
JP2016061777A (ja) 2014-09-12 2016-04-25 エクセリタス テクノロジーズ シンガポール プライヴェート リミテッド 高い温度安定性の干渉型吸収体を使用する表面微細加工赤外線センサ
US20190013455A1 (en) 2016-03-07 2019-01-10 Teknologian Tutkimuskeskus Vtt Oy Thermoelectric device
JP2019105624A (ja) 2017-12-11 2019-06-27 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法

Family Cites Families (14)

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JPS6177728A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Ind Co Ltd 熱電堆型赤外検出素子
JP3921320B2 (ja) * 2000-01-31 2007-05-30 日本電気株式会社 熱型赤外線検出器およびその製造方法
US6690014B1 (en) * 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
CN102384789B (zh) * 2010-08-30 2013-06-26 中国科学院微电子研究所 红外焦平面阵列器件及其制作方法
WO2012031282A2 (en) * 2010-09-03 2012-03-08 Tufts University/Trustees Of Tufts College Plasmonic nanoparticle-doped silk materials
DE102012104927A1 (de) * 2012-06-06 2013-12-12 Emitec Gesellschaft Für Emissionstechnologie Mbh Thermoelektrisches Modul und Verfahren zum Betrieb
US9297700B2 (en) * 2012-12-03 2016-03-29 Analog Devices, Inc. Photonic sensor and a method of manufacturing such a sensor
CN103199097B (zh) * 2013-04-08 2016-03-02 孙健 一种像元结构及基于像元结构的非致冷红外焦平面探测器
FR3009865B1 (fr) * 2013-08-22 2015-07-31 Commissariat Energie Atomique Detecteur bolometrique a bolometre de compensation a thermalisation renforcee
WO2015073694A1 (en) * 2013-11-13 2015-05-21 Ud Holdings, Llc Thermoelectric generator with minimal thermal shunting
US9465240B2 (en) * 2014-06-16 2016-10-11 Intel Corporation Optical absorption based device
CN104913852A (zh) * 2015-06-18 2015-09-16 中国科学院上海微系统与信息技术研究所 一种基于键合技术的光学读出红外探测器阵列的制作方法
FR3045148B1 (fr) * 2015-12-15 2017-12-08 Ulis Dispositif de detection a membranes bolometriques suspendues a fort rendement d'absorption et rapport signal sur bruit
US11911877B2 (en) * 2019-03-08 2024-02-27 Canon Kabushiki Kaisha Article including inorganic compound and method of manufacturing article including inorganic compound

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007024842A (ja) 2005-07-21 2007-02-01 Matsushita Electric Works Ltd 赤外線センサ
US20100031992A1 (en) 2006-05-30 2010-02-11 Ying Hsu Large format thermoelectric infrared detector and method of fabrication
JP2008082790A (ja) 2006-09-26 2008-04-10 Matsushita Electric Works Ltd 赤外線センサ
JP2009175124A (ja) 2007-12-27 2009-08-06 Rohm Co Ltd プラズモン共鳴検出器
JP2012058212A (ja) 2010-09-13 2012-03-22 Toshiba Corp 赤外線検出素子
JP2013051232A (ja) 2011-08-30 2013-03-14 Panasonic Corp 熱電変換デバイス
JP2013186038A (ja) 2012-03-09 2013-09-19 Panasonic Corp 赤外線検出装置
JP2015075385A (ja) 2013-10-08 2015-04-20 パナソニックＩｐマネジメント株式会社 赤外線検出器
JP2016061777A (ja) 2014-09-12 2016-04-25 エクセリタス テクノロジーズ シンガポール プライヴェート リミテッド 高い温度安定性の干渉型吸収体を使用する表面微細加工赤外線センサ
US20190013455A1 (en) 2016-03-07 2019-01-10 Teknologian Tutkimuskeskus Vtt Oy Thermoelectric device
JP2019105624A (ja) 2017-12-11 2019-06-27 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法

Also Published As

Publication number Publication date
US20220344561A1 (en) 2022-10-27
FI20195772A1 (en) 2021-03-17
JP2022548263A (ja) 2022-11-17
WO2021053267A1 (en) 2021-03-25
EP4031843A1 (en) 2022-07-27
CN119901378A (zh) 2025-04-29
CN114364954B (zh) 2024-12-06
CN114364954A (zh) 2022-04-15

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