FI20195772A1 - Thermal detector - Google Patents

Thermal detector Download PDF

Info

Publication number
FI20195772A1
FI20195772A1 FI20195772A FI20195772A FI20195772A1 FI 20195772 A1 FI20195772 A1 FI 20195772A1 FI 20195772 A FI20195772 A FI 20195772A FI 20195772 A FI20195772 A FI 20195772A FI 20195772 A1 FI20195772 A1 FI 20195772A1
Authority
FI
Finland
Prior art keywords
optically absorbing
layer
membrane
thermoelectric
detector according
Prior art date
Application number
FI20195772A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Inventor
Kirsi Tappura
Grigoras Kestutis
Mika Prunnila
Aapo Varpula
Jonna Tiira
Original Assignee
Teknologian Tutkimuskeskus Vtt Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknologian Tutkimuskeskus Vtt Oy filed Critical Teknologian Tutkimuskeskus Vtt Oy
Priority to FI20195772A priority Critical patent/FI20195772A1/en
Priority to US17/760,829 priority patent/US20220344561A1/en
Priority to PCT/FI2020/050582 priority patent/WO2021053267A1/en
Priority to CN202080063009.0A priority patent/CN114364954B/zh
Priority to JP2022516624A priority patent/JP7675707B2/ja
Priority to EP20780245.5A priority patent/EP4031843A1/en
Priority to CN202411798154.XA priority patent/CN119901378A/zh
Publication of FI20195772A1 publication Critical patent/FI20195772A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
FI20195772A 2019-09-16 2019-09-16 Thermal detector FI20195772A1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FI20195772A FI20195772A1 (en) 2019-09-16 2019-09-16 Thermal detector
US17/760,829 US20220344561A1 (en) 2019-09-16 2020-09-11 Thermal detector
PCT/FI2020/050582 WO2021053267A1 (en) 2019-09-16 2020-09-11 Thermal detector
CN202080063009.0A CN114364954B (zh) 2019-09-16 2020-09-11 热探测器
JP2022516624A JP7675707B2 (ja) 2019-09-16 2020-09-11 熱検出器
EP20780245.5A EP4031843A1 (en) 2019-09-16 2020-09-11 Thermal detector
CN202411798154.XA CN119901378A (zh) 2019-09-16 2020-09-11 热探测器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20195772A FI20195772A1 (en) 2019-09-16 2019-09-16 Thermal detector

Publications (1)

Publication Number Publication Date
FI20195772A1 true FI20195772A1 (en) 2021-03-17

Family

ID=72644269

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20195772A FI20195772A1 (en) 2019-09-16 2019-09-16 Thermal detector

Country Status (6)

Country Link
US (1) US20220344561A1 (enExample)
EP (1) EP4031843A1 (enExample)
JP (1) JP7675707B2 (enExample)
CN (2) CN119901378A (enExample)
FI (1) FI20195772A1 (enExample)
WO (1) WO2021053267A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI130930B1 (fi) 2021-08-02 2024-05-31 Teknologian Tutkimuskeskus Vtt Oy Laite ei-invasiiviseen seurantaan
CN118251583A (zh) * 2021-11-16 2024-06-25 迈瑞迪创新科技有限公司 具有高cmos集成度的高灵敏度热电基红外探测器
WO2024263494A2 (en) * 2023-06-23 2024-12-26 The Regents Of The University Of California Holey silicon-based thermopiles for high-sensitivity broadband thermal detection

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
JPS6177728A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Ind Co Ltd 熱電堆型赤外検出素子
JP3921320B2 (ja) * 2000-01-31 2007-05-30 日本電気株式会社 熱型赤外線検出器およびその製造方法
US6690014B1 (en) * 2000-04-25 2004-02-10 Raytheon Company Microbolometer and method for forming
JP4915898B2 (ja) * 2005-07-21 2012-04-11 パナソニック株式会社 赤外線センサ
US7755048B2 (en) * 2006-05-30 2010-07-13 Ying Hsu Large format thermoelectric infrared detector and method of fabrication
JP2008082790A (ja) * 2006-09-26 2008-04-10 Matsushita Electric Works Ltd 赤外線センサ
JP2009175124A (ja) * 2007-12-27 2009-08-06 Rohm Co Ltd プラズモン共鳴検出器
CN102384789B (zh) * 2010-08-30 2013-06-26 中国科学院微电子研究所 红外焦平面阵列器件及其制作方法
WO2012031282A2 (en) * 2010-09-03 2012-03-08 Tufts University/Trustees Of Tufts College Plasmonic nanoparticle-doped silk materials
JP5214690B2 (ja) * 2010-09-13 2013-06-19 株式会社東芝 赤外線検出素子
JP2013051232A (ja) * 2011-08-30 2013-03-14 Panasonic Corp 熱電変換デバイス
JP2013186038A (ja) * 2012-03-09 2013-09-19 Panasonic Corp 赤外線検出装置
DE102012104927A1 (de) * 2012-06-06 2013-12-12 Emitec Gesellschaft Für Emissionstechnologie Mbh Thermoelektrisches Modul und Verfahren zum Betrieb
US9297700B2 (en) * 2012-12-03 2016-03-29 Analog Devices, Inc. Photonic sensor and a method of manufacturing such a sensor
JP6218070B2 (ja) * 2013-10-08 2017-10-25 パナソニックＩｐマネジメント株式会社 赤外線検出器
CN103199097B (zh) * 2013-04-08 2016-03-02 孙健 一种像元结构及基于像元结构的非致冷红外焦平面探测器
FR3009865B1 (fr) * 2013-08-22 2015-07-31 Commissariat Energie Atomique Detecteur bolometrique a bolometre de compensation a thermalisation renforcee
WO2015073694A1 (en) * 2013-11-13 2015-05-21 Ud Holdings, Llc Thermoelectric generator with minimal thermal shunting
US9465240B2 (en) * 2014-06-16 2016-10-11 Intel Corporation Optical absorption based device
US20160079306A1 (en) * 2014-09-12 2016-03-17 Excelitas Technologies Singapore Pte. Ltd. Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber
CN104913852A (zh) * 2015-06-18 2015-09-16 中国科学院上海微系统与信息技术研究所 一种基于键合技术的光学读出红外探测器阵列的制作方法
FR3045148B1 (fr) * 2015-12-15 2017-12-08 Ulis Dispositif de detection a membranes bolometriques suspendues a fort rendement d'absorption et rapport signal sur bruit
US10811585B2 (en) * 2016-03-07 2020-10-20 Teknologian Tutkimuskeskus Vtt Oy Thermoelectric device
JP7232978B2 (ja) * 2017-12-11 2023-03-06 パナソニックＩｐマネジメント株式会社 赤外線センサおよび赤外線センサのボロメータ赤外線受光部を冷却する方法
US11911877B2 (en) * 2019-03-08 2024-02-27 Canon Kabushiki Kaisha Article including inorganic compound and method of manufacturing article including inorganic compound

Also Published As

Publication number Publication date
JP7675707B2 (ja) 2025-05-13
US20220344561A1 (en) 2022-10-27
JP2022548263A (ja) 2022-11-17
WO2021053267A1 (en) 2021-03-25
EP4031843A1 (en) 2022-07-27
CN119901378A (zh) 2025-04-29
CN114364954B (zh) 2024-12-06
CN114364954A (zh) 2022-04-15

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