JP7667262B2 - フッ素プラズマエッチングプロセスにおける保護層としての炭素ドープオキシフッ化イットリウム（ｃ：ｙ－ｏ－ｆ）層 - Google Patents

フッ素プラズマエッチングプロセスにおける保護層としての炭素ドープオキシフッ化イットリウム（ｃ：ｙ－ｏ－ｆ）層 Download PDF

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JP7667262B2
JP7667262B2 JP2023523612A JP2023523612A JP7667262B2 JP 7667262 B2 JP7667262 B2 JP 7667262B2 JP 2023523612 A JP2023523612 A JP 2023523612A JP 2023523612 A JP2023523612 A JP 2023523612A JP 7667262 B2 JP7667262 B2 JP 7667262B2
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substrate
film
protective coating
protective
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JP2023546177A5 (https=
JP2023546177A (ja
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クラスニッツァー，ジークフリート
ギモン，セバスチャン
ケローディ，ジュリアン
コニフ，ジョン
カーク，マシュー・ポール
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Oerlikon Surface Solutions AG Pfaeffikon
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP2023523612A 2020-10-19 2021-10-19 フッ素プラズマエッチングプロセスにおける保護層としての炭素ドープオキシフッ化イットリウム（ｃ：ｙ－ｏ－ｆ）層 Active JP7667262B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102020006407 2020-10-19
DE102020006407.8 2020-10-19
PCT/EP2021/078906 WO2022084292A1 (en) 2020-10-19 2021-10-19 Carbon doped metal oxyfluoride (c:m-0-f) layer as protection layer in fluorine plasma etch processes

Publications (3)

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JP2023546177A JP2023546177A (ja) 2023-11-01
JP2023546177A5 JP2023546177A5 (https=) 2024-05-09
JP7667262B2 true JP7667262B2 (ja) 2025-04-22

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JP2023523612A Active JP7667262B2 (ja) 2020-10-19 2021-10-19 フッ素プラズマエッチングプロセスにおける保護層としての炭素ドープオキシフッ化イットリウム（ｃ：ｙ－ｏ－ｆ）層

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US (1) US20230383396A1 (https=)
EP (1) EP4229227A1 (https=)
JP (1) JP7667262B2 (https=)
KR (1) KR20230091895A (https=)
CN (1) CN116635565A (https=)
IL (1) IL302021A (https=)
WO (1) WO2022084292A1 (https=)

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
WO2025263344A1 (ja) * 2024-06-20 2025-12-26 東京エレクトロン株式会社 膜、物品及びプラズマ処理装置
CN119894249B (zh) * 2024-12-23 2026-02-03 厦门天马显示科技有限公司 一种显示面板及其制备方法、显示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004197181A (ja) 2002-12-19 2004-07-15 Shin Etsu Chem Co Ltd フッ化物含有膜及び被覆部材
JP2008198843A (ja) 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板載置台及びその表面処理方法
JP2014040634A (ja) 2012-08-22 2014-03-06 Shin Etsu Chem Co Ltd 希土類元素オキシフッ化物粉末溶射材料及び希土類元素オキシフッ化物溶射部材
WO2018159713A1 (ja) 2017-03-01 2018-09-07 信越化学工業株式会社 溶射皮膜、溶射用粉、溶射用粉の製造方法、及び溶射皮膜の製造方法
JP2019504470A (ja) 2015-11-16 2019-02-14 クアーズテック，インコーポレイティド 耐食性構成部品および製造方法
WO2019044850A1 (ja) 2017-09-01 2019-03-07 学校法人 芝浦工業大学 部品および半導体製造装置
WO2019194247A1 (ja) 2018-04-03 2019-10-10 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置ならびにプラズマ処理装置用部材の製造方法
JP2020029614A (ja) 2018-08-15 2020-02-27 信越化学工業株式会社 溶射皮膜、溶射皮膜の製造方法、溶射部材及び溶射材料
US20200291528A1 (en) 2019-03-11 2020-09-17 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
JP2020529520A (ja) 2017-09-08 2020-10-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバ生産性向上のための希土類系オキシフッ化物ａｌｄコーティング

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100068489A1 (en) * 2007-02-23 2010-03-18 Applied Microstructures, Inc. Wear-resistant, carbon-doped metal oxide coatings for MEMS and nanoimprint lithography
US8900695B2 (en) * 2007-02-23 2014-12-02 Applied Microstructures, Inc. Durable conformal wear-resistant carbon-doped metal oxide-comprising coating
US9359666B2 (en) * 2009-03-13 2016-06-07 The Board Of Trustees Of The University Of Illinois Rapid crystallization of heavily doped metal oxides and products produced thereby
CN107250082B (zh) * 2015-03-05 2018-10-12 日本钇股份有限公司 烧结用材料以及用于制造烧结用材料的粉末
US20180327892A1 (en) * 2017-05-10 2018-11-15 Applied Materials, Inc. Metal oxy-flouride films for chamber components

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004197181A (ja) 2002-12-19 2004-07-15 Shin Etsu Chem Co Ltd フッ化物含有膜及び被覆部材
JP2008198843A (ja) 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板載置台及びその表面処理方法
JP2014040634A (ja) 2012-08-22 2014-03-06 Shin Etsu Chem Co Ltd 希土類元素オキシフッ化物粉末溶射材料及び希土類元素オキシフッ化物溶射部材
JP2019504470A (ja) 2015-11-16 2019-02-14 クアーズテック，インコーポレイティド 耐食性構成部品および製造方法
WO2018159713A1 (ja) 2017-03-01 2018-09-07 信越化学工業株式会社 溶射皮膜、溶射用粉、溶射用粉の製造方法、及び溶射皮膜の製造方法
WO2019044850A1 (ja) 2017-09-01 2019-03-07 学校法人 芝浦工業大学 部品および半導体製造装置
JP2020529520A (ja) 2017-09-08 2020-10-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバ生産性向上のための希土類系オキシフッ化物ａｌｄコーティング
WO2019194247A1 (ja) 2018-04-03 2019-10-10 京セラ株式会社 プラズマ処理装置用部材およびこれを備えるプラズマ処理装置ならびにプラズマ処理装置用部材の製造方法
JP2020029614A (ja) 2018-08-15 2020-02-27 信越化学工業株式会社 溶射皮膜、溶射皮膜の製造方法、溶射部材及び溶射材料
US20200291528A1 (en) 2019-03-11 2020-09-17 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts

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Publication number Publication date
WO2022084292A1 (en) 2022-04-28
IL302021A (en) 2023-06-01
US20230383396A1 (en) 2023-11-30
CN116635565A (zh) 2023-08-22
KR20230091895A (ko) 2023-06-23
JP2023546177A (ja) 2023-11-01
EP4229227A1 (en) 2023-08-23

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