Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/083—Oxides of refractory metals or yttrium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/02—Pretreatment of the material to be coated
  • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/02—Pretreatment of the material to be coated
  • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
  • C23C16/405—Oxides of refractory metals or yttrium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
  • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
  • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32458—Vessel
  • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32458—Vessel
  • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
  • H01J37/32495—Means for protecting the vessel against plasma
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

• Halogen-containing - plasmas fluorine, chlorine, bromide, iodine
• the halogen-containing plasmas also bombard and erode the parts and components of the plasma etching chambers, while the resultant particles may contaminate the wafers resulting in lowering device yields and shortening the lifetime of the parts and components of the plasma etching chambers which ultimately leads to increased process downtime and greater expense of producing semiconductor devices.
• oxide ceramics such as AI203, AION or Y203
• Yttria Y203
• Kazuhiro et al in J. Vac. Sci. A 27(4), Jul/Aug 2009 explain the formation of YOF to happen in four steps.
• a fluorocarbon film is formed on the Y203 surface.
• Carbon of the Fluorocarbon film and Oxygen of the Y203 react to form volatile CO.
• Y-0 bondings are decomposed.
• Yttrium of the decomposed Y-0 bondings reacts with the Fluorine of the fluorocarbon film and therefore YOxFy and/or YFx bondings are formed.
• the present invention has the objective to solve the problem as described above and to provide an improved coating for process chamber parts, having a superior plasma etch-resistance and offering high-level of process stability and reproducibility for fluorine plasma based etch processes for the production of semiconductor devices.
• the present invention has as well the objective to provide a method for producing such an improved coating.
• the problem is solved by an article according to the independent claim 1 , wherein the article may preferably be formed as a vacuum compatible plasma etch chamber article, comprising a vacuum compatible substrate.
• the dependent claims describe further and preferred embodiments of the present invention.
• the article comprises an improved coating, wherein the improved coating may be formed as a thin film comprising fluorinated metal oxide, wherein the thin film in addition comprises carbon with a concentration being in the range from 0.1 at% to 10 at%, preferably between 0.5at% and 2.5at%.
• the metal of the fluorinated metal oxide may be one or more element of the group III and or group IV elements of the periodical system. More preferably the metal may contain Yttrium or may be Yttrium.
• the protective film may comprise a gradient layer with increasing fluorine concentration measured from a deeper part of the protective film to a less deep part of the protective film and/or the protective film may be a multilayer system comprising at least two layers with different fluorine concentrations with the fluorine concentration in the layer more distant to the substrate being higher than the fluorine concentration in the layer closer to the substrate.
• additional materials may be as well present in the film. However it is preferred that the concentration of each of the additional materials does not exceed 5 at%. Most preferably no additional materials apart from difficult to avoid pollutions are present in the film.
• a method for producing an article according to the invention wherein the protective film overlaying at least a part of the substrate is applied by Physical Vapor Deposition (PVD) and/or Chemical Vapor Deposition (CVD).
• the inventive film hereby is to be applied on chamber parts/components for use in semiconductor production equipment by Physical Vapor Deposition (PVD) and/or Chemical Vapor Deposition (CVD) such as for example Plasma Enhanced CVD.
• PVD Physical Vapor Deposition
• CVD Chemical Vapor Deposition
• the inventive film is most suited for being applied on Aluminum and/or oxidized Aluminum and/or anodized Aluminum and/or precoated Aluminum and/or precoated anodized aluminium parts.
• One example would be the deposition of a thermal spray Y2O3 precoat layer onto anodized aluminum.
• Other substrates, such as for example quartz are possible as well.
• the inventive film can comprise or be a graded layer, starting from pure Metaloxide (Me-0) on the substrate to Me-0-F-C as top layer.
• the film can as well be a two or multilayer system, preferably with increasing F and/or C concentration in direction to the surface.
• the inventive film can comprise one or more metal and/or metal oxide layer(s) as an adhesion-promoting means to the substrate.
• the inventive film has a hardness of at least 10 GPa as determined by nanoindentation.
• the inventive film has a thickness between 0.1 pm and 30 pm.
• the inventive film has an amorphous phase, however according to a preferred embodiment the inventive film has crystalline phase such as for example trigonal and/or orthorhombic and/or preferably a rhombohedral crystalline phase as determined by x-ray diffraction.
• crystalline phase such as for example trigonal and/or orthorhombic and/or preferably a rhombohedral crystalline phase as determined by x-ray diffraction.
• the inventive film has a roughness of Ra ⁇ 1 pm, preferably Ra ⁇ 0.25 pm, most preferably Ra ⁇ 0.025 pm.
• the inventive film has a reduced peak height of Rpk ⁇ 0.25 pm, preferably Rpk ⁇ 0.10 pm, most preferably Rpk ⁇ 0.025 pm.
• the inventive film can for example be produced by plasma vapor deposition (PVD) process, preferably a reactive sputter process for example pulsed DC and/or HiPIMS and or bipolar HiPIMS and/or modulated pulsed power magnetron sputtering (MPPS).
• PVD plasma vapor deposition
• the reactive gas can be for example a mixture of CF- containing gases (such as CF4, C2F6, C3F8, etc ... ) with oxygen-containing gases (such as 02).
• the target can be a pure metallic target. It can be however as well for example a ceramic target, such as for example oxide, preferably Y2O3 and/or fluoride, preferably YF3 or a mixture thereof.
• a PVD process is particularly suitable, since the inherent density and lack of porosity of PVD films compared to existing art (thermal spray, aerosol deposition) particularly contributes positively to the reduction of particulate formation.
• a substrate bias which is floating and/or DC and or pulsed DC and/or bipolar and/or RF.
• a Y-containing thermally sprayed precoat such as but not limited to Y2O3 and/or YOF layer.
• chamber components including but not limited to an electrostatic chuck (ESC), a ring (e.g. a process kit ring or single ring), a chamber wall, a showerhead, a nozzle, a lid, a liner, a window, baffle, fastener.
• ESC electrostatic chuck
• ring e.g. a process kit ring or single ring
• a chamber wall e.g. a showerhead, a nozzle, a lid, a liner, a window, baffle, fastener.
• the substrate temperature is kept below 180 °C, and most preferably below 150°C. It should be noted that with higher temperature a higher deposition rate can be realized, however sometimes the substrates have temperature restrictions.
• Figure 1 shows the material composition of the films resulting from the two coating runs.
• Figure 2 shows different roughness values of the films coated on alumina, aluminum and silicon.
• Figure 3a shows the S EM of a cross section of a sample.
• Figure 3b shows the SEM of a part of the surface of a sample.
• Figure 4 shows the measured hardness and the E-modulus of the films resulting from the two coating runs.
• Argon plasma etching of substrates was performed using a DC filament discharge and pulsed DC substrate biasing.
• the chamber was evacuated below 1 E-2mbar and an Argon flow regulated to 160 seem was established.
• Pulsed DC power was then delivered to a balanced planar Yttrium target starting at a 50% power setting and then ramping to 6 kW.
• Reactive gasses 02 and CF4 were then used to deposit the C doped Yttrium Oxyfluoride (YOFC) coating.
• the ratio of CF4 to 02 was set to a ratio of 30:70.
• the reactive gasses are then adjusted at this set ratio slowly over a period of 5 min. so that the cathode voltage decreases steadily from 565V (pure metal film) to a final set point of 380V (fully oxy-fluoride doped carbon film).
• the CF4/02 ratio is still fixed. Minor adjustments in gas flow maintains the operating voltage setpoint on the sputtering cathode for the duration of the deposition. The conditions are thereby held at constant until the desired thickness of 2 pm is reached for the YOF functional top layer of the coating.
• a second coating run was performed. All parameters but the CF4 to 02 ratio were the same as in the first coating run. The CF4 to 02 ratio was set to a ratio of 10:90.
• Figure 1 shows the resulting coating compositions for both coating runs determined by ERDA/RBS analysis.
• Coating composition is given in atomic ratio at.%. The detection limit is below 0.1 at.%. It can be seen that the C concentration is at 1.2 at% for both coatings. In contrast oxygen concentration goes down and fluorine concentration goes up if CF4/02 ratio is increased.
• the inventors performed as well hardness measurements on their samples which were carried out on a LINAT equipment(Universal Nanomechanical Tester). Hardness might insofar at least indirectly play a role as harder films have typically a higher density and are therefore less prone to be etched.
• the films were indented 45 times using a fixed load of 5 mN, while indentation depths are maintained below 10% of film thickness (Oliver and Pharr method rule).
• Figure 4 shows the respective measurements.
• Hardness and E-Modulus turned out to be in the same range as compared to prior art Y203 films, taken as reference.

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• 2021
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