CN116635565A - 碳掺杂金属氟氧化物(c:m-0-f)层作为氟等离子体蚀刻过程中的保护层 - Google Patents
碳掺杂金属氟氧化物(c:m-0-f)层作为氟等离子体蚀刻过程中的保护层 Download PDFInfo
- Publication number
- CN116635565A CN116635565A CN202180072554.0A CN202180072554A CN116635565A CN 116635565 A CN116635565 A CN 116635565A CN 202180072554 A CN202180072554 A CN 202180072554A CN 116635565 A CN116635565 A CN 116635565A
- Authority
- CN
- China
- Prior art keywords
- protective film
- article according
- substrate
- article
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 9
- 238000001020 plasma etching Methods 0.000 title claims abstract description 5
- 239000010410 layer Substances 0.000 title claims description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims description 16
- 229910052731 fluorine Inorganic materials 0.000 title claims description 16
- 239000011737 fluorine Substances 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 title claims description 12
- 239000002184 metal Substances 0.000 title claims description 12
- 239000011241 protective layer Substances 0.000 title description 3
- 230000001681 protective effect Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 19
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910052727 yttrium Inorganic materials 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 238000007373 indentation Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 16
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- CHBIYWIUHAZZNR-UHFFFAOYSA-N [Y].FOF Chemical compound [Y].FOF CHBIYWIUHAZZNR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- NGBFQHCMQULJNZ-UHFFFAOYSA-N Torsemide Chemical compound CC(C)NC(=O)NS(=O)(=O)C1=CN=CC=C1NC1=CC=CC(C)=C1 NGBFQHCMQULJNZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001678 elastic recoil detection analysis Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000007542 hardness measurement Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Physical Vapour Deposition (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
本发明涉及一种制品，所述制品包括：‑基体；‑覆盖至少部分基体的保护膜，所述膜包括氟化金属氧化物，所述氟化金属氧化物包含元素周期系第III族和/或第IV族元素的一种或多种元素，其特征在于所述保护膜包括具有碳掺杂的氟化金属氧化物，其中碳浓度不低于0.1at％且不高于10at％，优选不低于0.5at％，且更优选不高于2.5at％，其中所述制品为等离子体蚀刻室组件和/或部件，且优选为由静电吸盘、环、工艺套环、单环、室壁、淋浴头、喷嘴、盖子、衬垫、窗、挡板或紧固件形成的组的制品。
Description
含卤素等离子体(氟、氯、溴、碘)已广泛用于半导体工业，以蚀刻硅晶片。然而，含卤素等离子体也会轰击和侵蚀等离子体蚀刻室的部件和组件，同时产生的颗粒可能污染晶片，导致降低器件产率，和缩短等离子体蚀刻室部件和组件的寿命，这最终导致过程停机时间增加和生产半导体器件的费用增加。
为了保护器件免受侵蚀、腐蚀和形成污染物，许多氧化物陶瓷，如Al2O3、AlON或Y2O3，被用作抗等离子体蚀刻组件保护材料和涂层。常规的耐等离子体陶瓷之一为氧化钇(Y2O3)。已证明与其它氧化物基陶瓷相比，由于其更高的等离子体侵蚀和腐蚀耐性，对于金属蚀刻和介电硅基蚀刻应用二者，它在等离子体下具有更长的室寿命。
然而，当在含氟等离子体中使用Y2O3作为蚀刻保护层时，已报道氟等离子体与Y2O3层反应，形成改变的YOF表面层。这个YOF层有剥离并产生颗粒的倾向，造成待蚀刻晶片上的表面污染。这最终导致生产产率的降低，并且很难实现集成电路的高水平过程再现性。
在J.Vac.Sci.A 27(4)，2009年7月/8月中Kazuhiro等人解释了YOF的形成在四个步骤发生。根据第一步骤，在Y2O3表面上形成氟碳膜。根据第二步骤，氟碳膜的碳和Y2O3的氧反应，形成挥发性CO。由此Y-O键分解。根据第三步骤，分解的Y-O键的钇与氟碳膜的氟反应，并因此形成YOxFy和/或YFx键。
为了避免这一问题，现有技术提出沉积耐蚀刻氟氧化钇Y-O-F(YxOyFz)涂层，以防止第三步骤，并用作保护层防止涂层表面被氟等离子体和颗粒产生进一步侵蚀。然而，尽管相对于F为化学惰性，但YOF涂层也可能由于氟碳聚合物层的沉积通过YOF表面上氟碳自由基的吸附而经历降解。除其它缺陷外，这些层还影响蚀刻过程，并可能产生大的不受控制的偏移。
因此，需要一种改进的涂层，所述涂层具有优越的等离子体蚀刻耐性，并为集成电路的生产提供高水平的过程稳定性和再现性。在很多情况下，用适应和调节改善这样的稳定性和再现性。然而，这可能耗时，并且可严重增加生产成本。
本发明的目的在于解决上述问题，并提供一种用于过程室部件的改进涂层，所述涂层具有优越的等离子体蚀刻耐性，并为生产半导体器件的氟等离子体基蚀刻过程提供高水平的过程稳定性和再现性。本发明还有的目的在于提供生产这样的改进涂层的方法。
根据本发明，所述问题通过根据独立权利要求1的制品来解决，其中所述制品可优选形成为真空可相容等离子体蚀刻室制品，包括真空可相容基体。从属权利要求描述了本发明的进一步和优选的实施方案。
根据本发明，所述制品包括改进的涂层，其中改进的涂层可形成为包含氟化金属氧化物的薄膜，其中薄膜另外包含浓度在0.1at％至10at％范围，优选在0.5at％和2.5at％之间的碳。氟化金属氧化物的金属可以为周期系第III族和或第IV族元素的一种或多种元素。更优选金属可包含钇，或者可以为钇。
根据另一个实例，保护膜可包括从保护膜的较深部分到保护膜的不太深部分测量氟浓度增加的梯度层，和/或保护膜可以为包括具有不同氟浓度的至少两个层的多层系统，其中到基体较远层中的氟浓度高于到基体较近层中的氟浓度。
根据本发明的一个优选实施方案，薄膜为MaObFcCd膜，其中0.25＜a＜0.4，0.2＜b＜0.6，0.1＜c＜0.6和0.01＜d＜0.1，其中如果只考虑膜中的这些材料，a+b+c+d＝1。这意味着另外的材料也可能存在于膜中。然而，优选每种另外的材料的浓度不超过5at％。最优选在膜中不存在除难以避免的污染以外的另外材料。
根据本发明的另一个方面，公开了生产根据本发明的制品的方法，其中覆盖至少部分基体的保护膜通过物理气相沉积(PVD)和/或化学气相沉积(CVD)施加。因此，本发明的膜通过物理气相沉积(PVD)和/或化学气相沉积(CVD)(例如等离子体增强CVD)施加到用于半导体生产设备的室部件/组件上。本发明的膜最适合施加到铝和/或氧化铝和/或阳极化铝和/或经预涂覆铝和/或经预涂覆阳极化铝部件上。一个实例是将热喷涂Y2O3预涂层沉积到阳极化铝上。其它基体也是可能的，例如石英。
本发明的膜可包括或为梯度层，从基体上的纯金属氧化物(Me-O)开始到作为顶层的Me-O-F-C。膜也可以为两层或多层系统，优选在向表面的方向具有增加的F和/或C浓度。
本发明的膜可包含一个或多个金属和/或金属氧化物层作为对基体的粘附促进手段。
优选本发明的膜具有通过纳米压痕确定至少10GPa的硬度。
优选本发明的膜具有0.1μm至30μm之间的厚度。
根据一个实施方案，本发明的膜具有无定形相，然而，根据一个优选的实施方案，本发明的膜具有结晶相，例如三方和/或斜方和/或优选菱形结晶相，如通过x射线衍射确定。
根据一个优选的实施方案中，本发明的膜具有Ra＜1μm，优选Ra＜0.25μm，最优选Ra＜0.025μm的粗糙度。
根据一个优选的实施方案，本发明的膜具有Rpk＜0.25μm，优选Rpk＜0.10μm，最优选Rpk＜0.025μm的降低峰高。
本发明的膜可例如通过等离子体气相沉积(PVD)方法产生，优选反应性溅射方法，例如脉冲DC和/或HiPIMS和或双极HiPIMS和/或调制脉冲功率磁控溅射(MPPS)。如果使用反应性方法，则反应性气体可以为例如含CF气体(如CF4、C2F6、C3F8等)与含氧气体(如O2)的混合物。靶可以为纯金属靶。然而，它也可以为例如陶瓷靶，例如氧化物(优选Y2O3)和/或氟化物(优选YF3)或其混合物。PVD方法特别适合，因为与现有技术(热喷涂、气溶胶沉积)相比，PVD膜的固有密度和孔隙性缺乏特别积极地有利于减少颗粒形成。
可有利地使用浮动和/或DC和或脉冲DC和/或双极和/或RF基体偏压。可很好地有利使用含Y的热喷预涂层，例如但不限于Y2O3和/或YOF层。
应用实例为室组件，包括但不限于静电吸盘(ESC)、环(例如工艺套环或单环)、室壁、淋浴头、喷嘴、盖子、衬垫、窗、挡板、紧固件。
优选在涂覆期间使基体温度保持低于180℃，最优选低于150℃。应注意，可利用更高的温度实现更高的沉积速率，然而有时基体有温度限制。
现在在实例的基础上并借助附图详细描述本发明。
附图示出为以下：
图1显示由两次涂覆运行产生的膜的材料组成。
图2显示在氧化铝、铝和硅上涂覆的膜的不同粗糙度值。
图3a显示样品的横截面的SEM。
图3b显示一部分样品表面的SEM。
图4显示从两次涂覆运行产生的膜的测量硬度和E-模量。
在第一次涂覆运行中，将铝和氧化铝(4μ-in.Ra)以及硅基体进行溶剂清洗，并装载到不锈钢沉积系统内的2轴旋转行星系统上。使用DC灯丝放电和脉冲DC基体偏压进行基体的氩等离子体蚀刻。
将室抽空到低于1E-2mbar，并建立调节到160sccm的氩气流量。然后将脉冲DC功率输送到平衡的平面钇靶，在50％功率设置开始，然后坡升到6kW。然后用反应性气体O2和CF4沉积C掺杂的氟氧化钇(YOFC)涂层。将CF4与O2之比设定到30∶70的比率。然后在5分钟的时间内在这个设定比缓慢调节反应性气体，以便使阴极电压从565V(纯金属膜)稳定下降到380V(完全氟氧化物掺杂的碳膜)的最终设定点。在这一点，CF4/O2比仍然固定。沉积期间，气体流量的微小调节保持溅射阴极上的操作电压设定点。条件由此保持在恒定，直至对于涂层的YOF功能顶层达到2μm的希望厚度。
进行第二次涂覆运行。除了CF4与O2比外，所有的参数均与第一次涂覆运行相同。将CF4与O2比设定到10∶90的比率。
图1显示通过ERDA/RBS分析确定的两种涂覆运行得到的涂层组成。涂层组成以原子比at.％给出。检测限低于0.1at％。可以看到，两种涂层的C浓度都在1.2at％。相比之下，如果CF4/O2比增加，则氧浓度下降，氟浓度上升。
XRD测量显示涂层的菱形结晶结构。
利用探针轮廓仪对这些进行粗糙度测量。结果显示于图2中。本发明的膜似乎提供了非常小的粗糙度值，这可能有助于减小剥落效应。小的Rpk(降低峰高)值也很显著。涂层表面不提供具有非常峰值的拓扑结构，它更像是一个丘陵景观。这也可从图3b中作为顶视图拍摄的SEM图看出。图3a显示一个样品的横截面的SEM。
发明人对他们的样品也进行了硬度测量，这些测量在UNAT设备(UniversalNanomechanical Tester)上进行。硬度可至少间接地起作用，因为较硬的膜通常具有较高的密度，因此不易被蚀刻。使用5mN的固定负载压膜45次，而压痕深度保持低于膜厚度的10％(Oliver和Pharr方法规则)。图4显示各自的测量。
与现有技术的Y2O3膜作为参考相比，结果硬度和E-模量在相同的范围内。
Claims (11)
1.一种制品，所述制品包括
-基体
-覆盖至少部分基体的保护膜，所述膜包括氟化金属氧化物，所属氟化金属氧化物包含元素周期系第III族和/或第IV族元素的一种或多种元素，其特征在于所述保护膜包括具有碳掺杂的氟化金属氧化物，其中碳浓度不低于0.1at％且不高于10at％，优选不低于0.5at％，且更优选不高于2.5at％，其中所述制品为等离子体蚀刻室组件和/或部件，且优选为由静电吸盘、环、工艺套环、单环、室壁、淋浴头、喷嘴、盖子、衬垫、窗、挡板或紧固件形成的组的制品。
2.根据权利要求1的制品，其特征在于所述保护膜的金属包含钇，且优选为钇。
3.根据权利要求1或2之一的制品，其特征在于所述保护膜具有不小于0.1μm且不大于30μm的涂层厚度。
4.根据前述权利要求之一的制品，其特征在于所述保护膜具有Ra＜1μm，优选Ra＜0.25μm，最优选Ra＜0.025μm的粗糙度。
5.根据前述权利要求之一的制品，其特征在于所述保护膜具有Rpk＜0.25μm，优选Rpk＜0.10μm，最优选Rpk＜0.025μm的降低峰高。
6.根据前述权利要求之一的制品，其特征在于所述保护膜具有利用5mN固定负载由纳米压痕确定至少10GPa的硬度，而压痕深度保持低于涂层厚度的10％。
7.根据前述权利要求之一的制品，其特征在于在保护膜和基体之间是为第二金属或第二金属氧化物的粘附促进层，其中所述膜的金属与第二金属优选相同。
8.根据前述权利要求之一的制品，其特征在于所述保护膜包括从保护膜的较深部分到保护膜的不太深部分测量氟浓度增加的梯度层，和/或保护膜为包括具有不同氟浓度的至少两个层的多层系统，其中到基体较远层中的氟浓度高于到基体较近层中的氟浓度。
9.根据前述权利要求之一的制品，其特征在于所述保护膜包括接近基体开始从纯M2O3到(MaObFcCd)的梯度层，其中MaObFcCd的浓度优选如下选择：0.25＜a＜0.4，0.2＜b＜0.6，0.1＜c＜0.6和0.01＜d＜0.1，其中a+b+c+d＝1。
10.根据前述权利要求之一的制品，其特征在于在保护膜或如果给予的话粘附促进层和基体之间预见为含Y的热喷涂预涂层，优选包含Y2O3和/或YOF。
11.一种生产根据前述权利要求之一的制品的方法，其特征在于所述覆盖至少部分基体的保护膜通过物理气相沉积(PVD)和/或化学气相沉积(CVD)来施加。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020006407 | 2020-10-19 | ||
| DE102020006407.8 | 2020-10-19 | ||
| PCT/EP2021/078906 WO2022084292A1 (en) | 2020-10-19 | 2021-10-19 | Carbon doped metal oxyfluoride (c:m-0-f) layer as protection layer in fluorine plasma etch processes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116635565A true CN116635565A (zh) | 2023-08-22 |
Family
ID=78516756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180072554.0A Pending CN116635565A (zh) | 2020-10-19 | 2021-10-19 | 碳掺杂金属氟氧化物(c:m-0-f)层作为氟等离子体蚀刻过程中的保护层 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230383396A1 (zh) |
| EP (1) | EP4229227A1 (zh) |
| JP (1) | JP2023546177A (zh) |
| KR (1) | KR20230091895A (zh) |
| CN (1) | CN116635565A (zh) |
| IL (1) | IL302021A (zh) |
| WO (1) | WO2022084292A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8900695B2 (en) * | 2007-02-23 | 2014-12-02 | Applied Microstructures, Inc. | Durable conformal wear-resistant carbon-doped metal oxide-comprising coating |
| US20100068489A1 (en) * | 2007-02-23 | 2010-03-18 | Applied Microstructures, Inc. | Wear-resistant, carbon-doped metal oxide coatings for MEMS and nanoimprint lithography |
| WO2010104656A2 (en) * | 2009-03-13 | 2010-09-16 | The Board Trustees Ofthe University Of Illinois | Rapid crystallization of heavily doped metal oxides and products produced thereby |
| US10443125B2 (en) * | 2017-05-10 | 2019-10-15 | Applied Materials, Inc. | Flourination process to create sacrificial oxy-flouride layer |
-
2021
- 2021-10-19 CN CN202180072554.0A patent/CN116635565A/zh active Pending
- 2021-10-19 KR KR1020237013286A patent/KR20230091895A/ko active Search and Examination
- 2021-10-19 US US18/248,894 patent/US20230383396A1/en active Pending
- 2021-10-19 WO PCT/EP2021/078906 patent/WO2022084292A1/en active Application Filing
- 2021-10-19 EP EP21802206.9A patent/EP4229227A1/en active Pending
- 2021-10-19 JP JP2023523612A patent/JP2023546177A/ja active Pending
- 2021-10-19 IL IL302021A patent/IL302021A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022084292A1 (en) | 2022-04-28 |
| JP2023546177A (ja) | 2023-11-01 |
| IL302021A (en) | 2023-06-01 |
| US20230383396A1 (en) | 2023-11-30 |
| EP4229227A1 (en) | 2023-08-23 |
| KR20230091895A (ko) | 2023-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210317563A1 (en) | Plasma erosion resistant rare-earth oxide based thin film coatings | |
| JP6630345B2 (ja) | 希土類酸化物のイオンアシスト蒸着トップコート | |
| US20240337023A1 (en) | Articles coated with a fluoro-annealed film | |
| KR100830068B1 (ko) | 반도체 공정 설비의 보론 나이트라이드/이트리아 복합체부품 및 그 제조방법 | |
| CN100357489C (zh) | 用于半导体工艺设备中的低污染部件及其制造方法 | |
| KR100853972B1 (ko) | 반응기 벽체 상의 다이아몬드 코팅막 및 그 제조방법 | |
| KR101304082B1 (ko) | 내식성 다층 부재 | |
| WO2017192622A1 (en) | Protective metal oxy-fluoride coatings | |
| WO2011066314A1 (en) | Methods of coating substrate with plasma resistant coatings and related coated substrates | |
| US20170291856A1 (en) | Solution precursor plasma spray of ceramic coating for semiconductor chamber applications | |
| CN219218125U (zh) | 涂覆有抗裂氟退火膜的制品 | |
| US12031212B2 (en) | Yttrium fluoride films and methods of preparing and using yttrium fluoride films | |
| CN116635565A (zh) | 碳掺杂金属氟氧化物(c:m-0-f)层作为氟等离子体蚀刻过程中的保护层 | |
| JP2008001562A (ja) | イットリウム系セラミックス被覆材およびその製造方法 | |
| TW202219308A (zh) | 利用低溫氟化的金屬氧化物 | |
| US20240212991A1 (en) | Yttrium aluminum perovskite (yap) based coatings for semiconductor processing chamber components | |
| Seo et al. | Particle Defect Reduction Through YF 3 Coated Remote Plasma Source for High Throughput Dry Cleaning Process | |
| WO2022117746A1 (en) | Improved plasma resistant coatings for electrostatic chucks |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |