JP7653594B2 - スパッタリング装置 - Google Patents

スパッタリング装置 Download PDF

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Publication number
JP7653594B2
JP7653594B2 JP2023567343A JP2023567343A JP7653594B2 JP 7653594 B2 JP7653594 B2 JP 7653594B2 JP 2023567343 A JP2023567343 A JP 2023567343A JP 2023567343 A JP2023567343 A JP 2023567343A JP 7653594 B2 JP7653594 B2 JP 7653594B2
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JP
Japan
Prior art keywords
target
sputtering
dummy electrode
gap
electrode
Prior art date
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Active
Application number
JP2023567343A
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English (en)
Japanese (ja)
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JPWO2023112155A1 (https=
Inventor
靖典 安東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Publication of JPWO2023112155A1 publication Critical patent/JPWO2023112155A1/ja
Application granted granted Critical
Publication of JP7653594B2 publication Critical patent/JP7653594B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2023567343A 2021-12-14 2021-12-14 スパッタリング装置 Active JP7653594B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/046079 WO2023112155A1 (ja) 2021-12-14 2021-12-14 スパッタリング装置

Publications (2)

Publication Number Publication Date
JPWO2023112155A1 JPWO2023112155A1 (https=) 2023-06-22
JP7653594B2 true JP7653594B2 (ja) 2025-03-31

Family

ID=86773738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567343A Active JP7653594B2 (ja) 2021-12-14 2021-12-14 スパッタリング装置

Country Status (5)

Country Link
JP (1) JP7653594B2 (https=)
KR (1) KR20240101688A (https=)
CN (1) CN118251754A (https=)
TW (1) TWI833166B (https=)
WO (1) WO2023112155A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016006155A1 (ja) 2014-07-09 2016-01-14 株式会社アルバック 絶縁物ターゲット
JP2019052345A (ja) 2017-09-14 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537868U (https=) * 1978-09-05 1980-03-11
JPS63243269A (ja) * 1987-03-30 1988-10-11 Toshiba Corp スパツタリング・タ−ゲツトの固定装置
JPH0748666Y2 (ja) * 1990-03-05 1995-11-08 日電アネルバ株式会社 スパッタリング装置
JP2021080533A (ja) 2019-11-21 2021-05-27 日新電機株式会社 スパッタリング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016006155A1 (ja) 2014-07-09 2016-01-14 株式会社アルバック 絶縁物ターゲット
JP2019052345A (ja) 2017-09-14 2019-04-04 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置

Also Published As

Publication number Publication date
CN118251754A (zh) 2024-06-25
JPWO2023112155A1 (https=) 2023-06-22
TW202330969A (zh) 2023-08-01
KR20240101688A (ko) 2024-07-02
WO2023112155A1 (ja) 2023-06-22
TWI833166B (zh) 2024-02-21

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