KR20240101688A - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

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Publication number
KR20240101688A
KR20240101688A KR1020247019907A KR20247019907A KR20240101688A KR 20240101688 A KR20240101688 A KR 20240101688A KR 1020247019907 A KR1020247019907 A KR 1020247019907A KR 20247019907 A KR20247019907 A KR 20247019907A KR 20240101688 A KR20240101688 A KR 20240101688A
Authority
KR
South Korea
Prior art keywords
target
dummy electrode
sputtering device
electrode
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247019907A
Other languages
English (en)
Korean (ko)
Inventor
야스노리 안도
Original Assignee
닛신덴키 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛신덴키 가부시키 가이샤 filed Critical 닛신덴키 가부시키 가이샤
Publication of KR20240101688A publication Critical patent/KR20240101688A/ko
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01L21/28194—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020247019907A 2021-12-14 2021-12-14 스퍼터링 장치 Pending KR20240101688A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/046079 WO2023112155A1 (ja) 2021-12-14 2021-12-14 スパッタリング装置

Publications (1)

Publication Number Publication Date
KR20240101688A true KR20240101688A (ko) 2024-07-02

Family

ID=86773738

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247019907A Pending KR20240101688A (ko) 2021-12-14 2021-12-14 스퍼터링 장치

Country Status (5)

Country Link
JP (1) JP7653594B2 (https=)
KR (1) KR20240101688A (https=)
CN (1) CN118251754A (https=)
TW (1) TWI833166B (https=)
WO (1) WO2023112155A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021080533A (ja) 2019-11-21 2021-05-27 日新電機株式会社 スパッタリング装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537868U (https=) * 1978-09-05 1980-03-11
JPS63243269A (ja) * 1987-03-30 1988-10-11 Toshiba Corp スパツタリング・タ−ゲツトの固定装置
JPH0748666Y2 (ja) * 1990-03-05 1995-11-08 日電アネルバ株式会社 スパッタリング装置
SG11201600348XA (en) * 2014-07-09 2016-02-26 Ulvac Inc Insulator target
JP6916699B2 (ja) * 2017-09-14 2021-08-11 株式会社Ｓｃｒｅｅｎホールディングス 成膜方法および成膜装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021080533A (ja) 2019-11-21 2021-05-27 日新電機株式会社 スパッタリング装置

Also Published As

Publication number Publication date
CN118251754A (zh) 2024-06-25
JPWO2023112155A1 (https=) 2023-06-22
JP7653594B2 (ja) 2025-03-31
TW202330969A (zh) 2023-08-01
WO2023112155A1 (ja) 2023-06-22
TWI833166B (zh) 2024-02-21

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