JP7646868B2 - プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体 - Google Patents

プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体 Download PDF

Info

Publication number
JP7646868B2
JP7646868B2 JP2023561562A JP2023561562A JP7646868B2 JP 7646868 B2 JP7646868 B2 JP 7646868B2 JP 2023561562 A JP2023561562 A JP 2023561562A JP 2023561562 A JP2023561562 A JP 2023561562A JP 7646868 B2 JP7646868 B2 JP 7646868B2
Authority
JP
Japan
Prior art keywords
clock signal
frequency
source
bias
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023561562A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023090252A5 (https=
JPWO2023090252A1 (https=
Inventor
地塩 輿水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023090252A1 publication Critical patent/JPWO2023090252A1/ja
Publication of JPWO2023090252A5 publication Critical patent/JPWO2023090252A5/ja
Application granted granted Critical
Publication of JP7646868B2 publication Critical patent/JP7646868B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
JP2023561562A 2021-11-19 2022-11-10 プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体 Active JP7646868B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021188307 2021-11-19
JP2021188307 2021-11-19
PCT/JP2022/041958 WO2023090252A1 (ja) 2021-11-19 2022-11-10 プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体

Publications (3)

Publication Number Publication Date
JPWO2023090252A1 JPWO2023090252A1 (https=) 2023-05-25
JPWO2023090252A5 JPWO2023090252A5 (https=) 2024-12-11
JP7646868B2 true JP7646868B2 (ja) 2025-03-17

Family

ID=86396974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023561562A Active JP7646868B2 (ja) 2021-11-19 2022-11-10 プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体

Country Status (6)

Country Link
US (1) US20240304418A1 (https=)
JP (1) JP7646868B2 (https=)
KR (1) KR20240101830A (https=)
CN (1) CN118303135A (https=)
TW (1) TW202336803A (https=)
WO (1) WO2023090252A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102786710B1 (ko) * 2021-01-29 2025-03-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US20250087462A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Radio-frequency (rf) matching network and tuning technique
WO2025211081A1 (ja) * 2024-04-03 2025-10-09 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及び制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012503431A (ja) 2008-09-19 2012-02-02 アルテラ コーポレイション 分数クロック信号を生成するための技術
JP2015185698A (ja) 2014-03-25 2015-10-22 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114406A (ja) * 1997-06-13 1999-01-06 Canon Inc 画像処理装置、画像メモリの読み出し方法及びコンピュータ読み取り可能な記録媒体
JP4323880B2 (ja) * 2003-06-26 2009-09-02 パナソニック株式会社 クロック信号発生回路、受信装置、および受信方法
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP6162016B2 (ja) * 2013-10-09 2017-07-12 東京エレクトロン株式会社 プラズマ処理装置
JP6043852B2 (ja) * 2015-10-01 2016-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012503431A (ja) 2008-09-19 2012-02-02 アルテラ コーポレイション 分数クロック信号を生成するための技術
JP2015185698A (ja) 2014-03-25 2015-10-22 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
KR20240101830A (ko) 2024-07-02
US20240304418A1 (en) 2024-09-12
TW202336803A (zh) 2023-09-16
CN118303135A (zh) 2024-07-05
WO2023090252A1 (ja) 2023-05-25
JPWO2023090252A1 (https=) 2023-05-25

Similar Documents

Publication Publication Date Title
JP7646868B2 (ja) プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体
US9736921B2 (en) Method for impedance matching of plasma processing apparatus
TW202541164A (zh) 電漿處理裝置、控制方法、程式及電源系統
JP7474913B2 (ja) 電源システム
CN118414889A (zh) 等离子体处理装置、电源系统、控制方法、程序和存储介质
JP7622252B2 (ja) プラズマ処理装置、電源システム、制御方法、プログラム、及び記憶媒体
TW202316915A (zh) 電漿處理系統及電漿處理方法
WO2024024681A1 (ja) プラズマ処理装置及びソース高周波電力のソース周波数を制御する方法
US20210257187A1 (en) Plasma processing apparatus and matching method
US20260074162A1 (en) Plasma processing method and plasma processing apparatus
EP4618135A1 (en) Plasma processing device, power supply system, and method for controlling source frequency
TWI918955B (zh) 電漿處理裝置及電漿處理方法
TW202603813A (zh) 電漿處理裝置、電源系統、及控制方法
WO2024116938A1 (ja) プラズマ処理装置、電源システム、及び周波数制御方法
TW202335028A (zh) 電漿處理裝置、供電系統、控制方法、程式及記憶媒體
TW202603804A (zh) 電漿處理裝置、電源系統、及控制方法
WO2025057636A1 (ja) プラズマ処理装置
WO2024106256A1 (ja) プラズマ処理装置及びプラズマ処理方法
WO2025211080A1 (ja) プラズマ処理システム及び周波数最適化方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241203

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241203

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20241203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250107

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20250203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250305

R150 Certificate of patent or registration of utility model

Ref document number: 7646868

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150