KR20240101830A - 플라즈마 처리 장치, 제어 방법, 전원 시스템, 프로그램 및 기억 매체 - Google Patents

플라즈마 처리 장치, 제어 방법, 전원 시스템, 프로그램 및 기억 매체 Download PDF

Info

Publication number
KR20240101830A
KR20240101830A KR1020247018962A KR20247018962A KR20240101830A KR 20240101830 A KR20240101830 A KR 20240101830A KR 1020247018962 A KR1020247018962 A KR 1020247018962A KR 20247018962 A KR20247018962 A KR 20247018962A KR 20240101830 A KR20240101830 A KR 20240101830A
Authority
KR
South Korea
Prior art keywords
clock signal
frequency
source
bias
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247018962A
Other languages
English (en)
Korean (ko)
Inventor
치시오 고시미즈
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240101830A publication Critical patent/KR20240101830A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01L21/68785—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020247018962A 2021-11-19 2022-11-10 플라즈마 처리 장치, 제어 방법, 전원 시스템, 프로그램 및 기억 매체 Pending KR20240101830A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021188307 2021-11-19
JPJP-P-2021-188307 2021-11-19
PCT/JP2022/041958 WO2023090252A1 (ja) 2021-11-19 2022-11-10 プラズマ処理装置、制御方法、電源システム、プログラム、及び記憶媒体

Publications (1)

Publication Number Publication Date
KR20240101830A true KR20240101830A (ko) 2024-07-02

Family

ID=86396974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247018962A Pending KR20240101830A (ko) 2021-11-19 2022-11-10 플라즈마 처리 장치, 제어 방법, 전원 시스템, 프로그램 및 기억 매체

Country Status (6)

Country Link
US (1) US20240304418A1 (https=)
JP (1) JP7646868B2 (https=)
KR (1) KR20240101830A (https=)
CN (1) CN118303135A (https=)
TW (1) TW202336803A (https=)
WO (1) WO2023090252A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102786710B1 (ko) * 2021-01-29 2025-03-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US20250087462A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Radio-frequency (rf) matching network and tuning technique
WO2025211081A1 (ja) * 2024-04-03 2025-10-09 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及び制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114406A (ja) * 1997-06-13 1999-01-06 Canon Inc 画像処理装置、画像メモリの読み出し方法及びコンピュータ読み取り可能な記録媒体
JP4323880B2 (ja) * 2003-06-26 2009-09-02 パナソニック株式会社 クロック信号発生回路、受信装置、および受信方法
US7956696B2 (en) * 2008-09-19 2011-06-07 Altera Corporation Techniques for generating fractional clock signals
JP6162016B2 (ja) * 2013-10-09 2017-07-12 東京エレクトロン株式会社 プラズマ処理装置
JP6295119B2 (ja) * 2014-03-25 2018-03-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6043852B2 (ja) * 2015-10-01 2016-12-14 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Also Published As

Publication number Publication date
US20240304418A1 (en) 2024-09-12
TW202336803A (zh) 2023-09-16
CN118303135A (zh) 2024-07-05
WO2023090252A1 (ja) 2023-05-25
JPWO2023090252A1 (https=) 2023-05-25
JP7646868B2 (ja) 2025-03-17

Similar Documents

Publication Publication Date Title
KR20240101830A (ko) 플라즈마 처리 장치, 제어 방법, 전원 시스템, 프로그램 및 기억 매체
TW202541164A (zh) 電漿處理裝置、控制方法、程式及電源系統
US12249487B2 (en) Plasma processing apparatus and plasma processing method
KR102786710B1 (ko) 플라즈마 처리 장치 및 소스 고주파 전력의 소스 주파수를 제어하는 방법
US20250149296A1 (en) Plasma processing apparatus and plasma processing method
KR20240119145A (ko) 플라즈마 처리 장치, 전원 시스템, 제어 방법, 프로그램, 및 기억 매체
KR20240101662A (ko) 플라즈마 처리 장치, 전원 시스템, 제어 방법, 프로그램, 및 기억 매체
TW202316915A (zh) 電漿處理系統及電漿處理方法
EP4565010A1 (en) Plasma processing device, and method for controlling source frequency of source high-frequency electric power
KR102960037B1 (ko) 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법
US20260074162A1 (en) Plasma processing method and plasma processing apparatus
EP4618135A1 (en) Plasma processing device, power supply system, and method for controlling source frequency
KR20250099261A (ko) 플라즈마 처리 장치, 전원 시스템, 및 주파수 제어 방법
WO2025211080A1 (ja) プラズマ処理システム及び周波数最適化方法
TW202335028A (zh) 電漿處理裝置、供電系統、控制方法、程式及記憶媒體
CN120188576A (zh) 等离子体处理装置及等离子体处理方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000