JP7644812B2 - 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 - Google Patents

複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 Download PDF

Info

Publication number
JP7644812B2
JP7644812B2 JP2023517095A JP2023517095A JP7644812B2 JP 7644812 B2 JP7644812 B2 JP 7644812B2 JP 2023517095 A JP2023517095 A JP 2023517095A JP 2023517095 A JP2023517095 A JP 2023517095A JP 7644812 B2 JP7644812 B2 JP 7644812B2
Authority
JP
Japan
Prior art keywords
substrate
crystal film
base substrate
composite substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023517095A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022230342A1 (https=
Inventor
潤 吉川
美穂 前田
宏之 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2022230342A1 publication Critical patent/JPWO2022230342A1/ja
Application granted granted Critical
Publication of JP7644812B2 publication Critical patent/JP7644812B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023517095A 2021-04-27 2022-02-28 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 Active JP7644812B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021075004 2021-04-27
JP2021075004 2021-04-27
PCT/JP2022/008148 WO2022230342A1 (ja) 2021-04-27 2022-02-28 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法

Publications (2)

Publication Number Publication Date
JPWO2022230342A1 JPWO2022230342A1 (https=) 2022-11-03
JP7644812B2 true JP7644812B2 (ja) 2025-03-12

Family

ID=83846869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023517095A Active JP7644812B2 (ja) 2021-04-27 2022-02-28 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法

Country Status (4)

Country Link
US (1) US12559855B2 (https=)
JP (1) JP7644812B2 (https=)
CN (1) CN116888310A (https=)
WO (1) WO2022230342A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7410159B2 (ja) * 2019-09-11 2024-01-09 日本碍子株式会社 半導体膜
WO2021064795A1 (ja) * 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
CN114585776B (zh) * 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法
KR102756086B1 (ko) * 2023-07-05 2025-01-21 (주)케이원솔루션 알칼리 염기를 이용하여 도핑된 산화갈륨 제조방법
CN121023639B (zh) * 2025-10-27 2026-01-30 山东大学 一种单畴κ-Ga2O3外延薄膜的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101993110A (zh) 2010-11-14 2011-03-30 青岛理工大学 一种微波水热法制备β-氧化镓的方法
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
CN107841785A (zh) 2017-10-27 2018-03-27 浙江理工大学 一种氧化镓相结纳米柱阵列及其制备方法
WO2020194763A1 (ja) 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
JP2021042120A (ja) 2019-04-24 2021-03-18 日本碍子株式会社 半導体膜
WO2021064803A1 (ja) 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6067532B2 (ja) 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置
JP6349592B2 (ja) 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
JP2020011858A (ja) * 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
CN114585776B (zh) 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101993110A (zh) 2010-11-14 2011-03-30 青岛理工大学 一种微波水热法制备β-氧化镓的方法
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
CN107841785A (zh) 2017-10-27 2018-03-27 浙江理工大学 一种氧化镓相结纳米柱阵列及其制备方法
WO2020194763A1 (ja) 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
JP2021042120A (ja) 2019-04-24 2021-03-18 日本碍子株式会社 半導体膜
WO2021064803A1 (ja) 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜

Also Published As

Publication number Publication date
US12559855B2 (en) 2026-02-24
CN116888310A (zh) 2023-10-13
JPWO2022230342A1 (https=) 2022-11-03
US20240003043A1 (en) 2024-01-04
WO2022230342A1 (ja) 2022-11-03

Similar Documents

Publication Publication Date Title
JP7644812B2 (ja) 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法
CN113574214B (zh) 基底基板及其制造方法
JP7461851B2 (ja) 半導体膜
CN114269972B (zh) 半导体膜
JP7410009B2 (ja) 半導体膜
US12421621B2 (en) Underlying substrate
US12563795B2 (en) Multilayer structure
JP7439117B2 (ja) 下地基板及びその製造方法
JP7320070B2 (ja) 下地基板及びその製造方法
JP7221410B2 (ja) α－Ｇａ２Ｏ３系半導体膜
US20250391657A1 (en) Base substrate
WO2025203519A1 (ja) 半導体膜、複合膜、及び半導体膜付き下地基板
WO2025203572A1 (ja) 下地基板

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230914

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20241112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250225

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250228

R150 Certificate of patent or registration of utility model

Ref document number: 7644812

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150