CN116888310A - 复合基板、复合基板的制法及氧化镓晶体膜的制法 - Google Patents

复合基板、复合基板的制法及氧化镓晶体膜的制法 Download PDF

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Publication number
CN116888310A
CN116888310A CN202280016510.0A CN202280016510A CN116888310A CN 116888310 A CN116888310 A CN 116888310A CN 202280016510 A CN202280016510 A CN 202280016510A CN 116888310 A CN116888310 A CN 116888310A
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CN
China
Prior art keywords
substrate
crystal film
base substrate
film
alpha
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Pending
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CN202280016510.0A
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English (en)
Chinese (zh)
Inventor
吉川润
前田美穗
柴田宏之
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication of CN116888310A publication Critical patent/CN116888310A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202280016510.0A 2021-04-27 2022-02-28 复合基板、复合基板的制法及氧化镓晶体膜的制法 Pending CN116888310A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021075004 2021-04-27
JP2021-075004 2021-04-27
PCT/JP2022/008148 WO2022230342A1 (ja) 2021-04-27 2022-02-28 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法

Publications (1)

Publication Number Publication Date
CN116888310A true CN116888310A (zh) 2023-10-13

Family

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Family Applications (1)

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CN202280016510.0A Pending CN116888310A (zh) 2021-04-27 2022-02-28 复合基板、复合基板的制法及氧化镓晶体膜的制法

Country Status (4)

Country Link
US (1) US12559855B2 (https=)
JP (1) JP7644812B2 (https=)
CN (1) CN116888310A (https=)
WO (1) WO2022230342A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7410159B2 (ja) * 2019-09-11 2024-01-09 日本碍子株式会社 半導体膜
WO2021064795A1 (ja) * 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
CN114585776B (zh) * 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法
KR102756086B1 (ko) * 2023-07-05 2025-01-21 (주)케이원솔루션 알칼리 염기를 이용하여 도핑된 산화갈륨 제조방법
CN121023639B (zh) * 2025-10-27 2026-01-30 山东大学 一种单畴κ-Ga2O3外延薄膜的制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101993110B (zh) * 2010-11-14 2012-06-27 青岛理工大学 一种微波水热法制备β-氧化镓的方法
JP5793732B2 (ja) * 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP6067532B2 (ja) 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置
JP6349592B2 (ja) 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
CN109423690B (zh) * 2017-08-21 2022-09-16 株式会社Flosfia 用于制造结晶膜的方法
CN107841785B (zh) * 2017-10-27 2020-06-02 浙江理工大学 一种氧化镓相结纳米柱阵列及其制备方法
JP2020011858A (ja) * 2018-07-17 2020-01-23 トヨタ自動車株式会社 成膜方法、及び、半導体装置の製造方法
CN113614292B (zh) 2019-03-28 2024-08-23 日本碍子株式会社 半导体膜
JP6784871B1 (ja) * 2019-04-24 2020-11-11 日本碍子株式会社 半導体膜
WO2021064803A1 (ja) * 2019-09-30 2021-04-08 日本碍子株式会社 α－Ｇａ２Ｏ３系半導体膜
CN114585776B (zh) 2019-11-05 2025-06-03 日本碍子株式会社 氧化镓结晶的制法

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Publication number Publication date
US12559855B2 (en) 2026-02-24
JPWO2022230342A1 (https=) 2022-11-03
US20240003043A1 (en) 2024-01-04
JP7644812B2 (ja) 2025-03-12
WO2022230342A1 (ja) 2022-11-03

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