JPWO2022230342A1 - - Google Patents
Info
- Publication number
- JPWO2022230342A1 JPWO2022230342A1 JP2023517095A JP2023517095A JPWO2022230342A1 JP WO2022230342 A1 JPWO2022230342 A1 JP WO2022230342A1 JP 2023517095 A JP2023517095 A JP 2023517095A JP 2023517095 A JP2023517095 A JP 2023517095A JP WO2022230342 A1 JPWO2022230342 A1 JP WO2022230342A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021075004 | 2021-04-27 | ||
| JP2021075004 | 2021-04-27 | ||
| PCT/JP2022/008148 WO2022230342A1 (ja) | 2021-04-27 | 2022-02-28 | 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022230342A1 true JPWO2022230342A1 (https=) | 2022-11-03 |
| JP7644812B2 JP7644812B2 (ja) | 2025-03-12 |
Family
ID=83846869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023517095A Active JP7644812B2 (ja) | 2021-04-27 | 2022-02-28 | 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12559855B2 (https=) |
| JP (1) | JP7644812B2 (https=) |
| CN (1) | CN116888310A (https=) |
| WO (1) | WO2022230342A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7410159B2 (ja) * | 2019-09-11 | 2024-01-09 | 日本碍子株式会社 | 半導体膜 |
| WO2021064795A1 (ja) * | 2019-09-30 | 2021-04-08 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
| CN114585776B (zh) * | 2019-11-05 | 2025-06-03 | 日本碍子株式会社 | 氧化镓结晶的制法 |
| KR102756086B1 (ko) * | 2023-07-05 | 2025-01-21 | (주)케이원솔루션 | 알칼리 염기를 이용하여 도핑된 산화갈륨 제조방법 |
| CN121023639B (zh) * | 2025-10-27 | 2026-01-30 | 山东大学 | 一种单畴κ-Ga2O3外延薄膜的制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101993110A (zh) * | 2010-11-14 | 2011-03-30 | 青岛理工大学 | 一种微波水热法制备β-氧化镓的方法 |
| JP2013028480A (ja) * | 2011-07-27 | 2013-02-07 | Kochi Univ Of Technology | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| CN107841785A (zh) * | 2017-10-27 | 2018-03-27 | 浙江理工大学 | 一种氧化镓相结纳米柱阵列及其制备方法 |
| WO2020194763A1 (ja) * | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 半導体膜 |
| JP2021042120A (ja) * | 2019-04-24 | 2021-03-18 | 日本碍子株式会社 | 半導体膜 |
| WO2021064803A1 (ja) * | 2019-09-30 | 2021-04-08 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6067532B2 (ja) | 2013-10-10 | 2017-01-25 | 株式会社Flosfia | 半導体装置 |
| JP6349592B2 (ja) | 2014-07-22 | 2018-07-04 | 株式会社Flosfia | 半導体装置 |
| CN109423690B (zh) * | 2017-08-21 | 2022-09-16 | 株式会社Flosfia | 用于制造结晶膜的方法 |
| JP2020011858A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
| CN114585776B (zh) | 2019-11-05 | 2025-06-03 | 日本碍子株式会社 | 氧化镓结晶的制法 |
-
2022
- 2022-02-28 JP JP2023517095A patent/JP7644812B2/ja active Active
- 2022-02-28 CN CN202280016510.0A patent/CN116888310A/zh active Pending
- 2022-02-28 WO PCT/JP2022/008148 patent/WO2022230342A1/ja not_active Ceased
-
2023
- 2023-09-19 US US18/469,661 patent/US12559855B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101993110A (zh) * | 2010-11-14 | 2011-03-30 | 青岛理工大学 | 一种微波水热法制备β-氧化镓的方法 |
| JP2013028480A (ja) * | 2011-07-27 | 2013-02-07 | Kochi Univ Of Technology | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| CN107841785A (zh) * | 2017-10-27 | 2018-03-27 | 浙江理工大学 | 一种氧化镓相结纳米柱阵列及其制备方法 |
| WO2020194763A1 (ja) * | 2019-03-28 | 2020-10-01 | 日本碍子株式会社 | 半導体膜 |
| JP2021042120A (ja) * | 2019-04-24 | 2021-03-18 | 日本碍子株式会社 | 半導体膜 |
| WO2021064803A1 (ja) * | 2019-09-30 | 2021-04-08 | 日本碍子株式会社 | α－Ｇａ２Ｏ３系半導体膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12559855B2 (en) | 2026-02-24 |
| CN116888310A (zh) | 2023-10-13 |
| US20240003043A1 (en) | 2024-01-04 |
| JP7644812B2 (ja) | 2025-03-12 |
| WO2022230342A1 (ja) | 2022-11-03 |
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