JP7626257B2 - キャパシタ - Google Patents

キャパシタ Download PDF

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Publication number
JP7626257B2
JP7626257B2 JP2023577919A JP2023577919A JP7626257B2 JP 7626257 B2 JP7626257 B2 JP 7626257B2 JP 2023577919 A JP2023577919 A JP 2023577919A JP 2023577919 A JP2023577919 A JP 2023577919A JP 7626257 B2 JP7626257 B2 JP 7626257B2
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JP
Japan
Prior art keywords
substrate
dielectric layer
cross
occupation ratio
fibrous conductive
Prior art date
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Active
Application number
JP2023577919A
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English (en)
Japanese (ja)
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JPWO2024095537A1 (https=
JPWO2024095537A5 (https=
Inventor
創太 柳井
康弘 清水
真己 永田
暢明 白井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
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Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of JPWO2024095537A1 publication Critical patent/JPWO2024095537A1/ja
Publication of JPWO2024095537A5 publication Critical patent/JPWO2024095537A5/ja
Application granted granted Critical
Publication of JP7626257B2 publication Critical patent/JP7626257B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/40—Fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
JP2023577919A 2022-11-01 2023-07-14 キャパシタ Active JP7626257B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022175701 2022-11-01
JP2022175701 2022-11-01
PCT/JP2023/026071 WO2024095537A1 (ja) 2022-11-01 2023-07-14 キャパシタ

Publications (3)

Publication Number Publication Date
JPWO2024095537A1 JPWO2024095537A1 (https=) 2024-05-10
JPWO2024095537A5 JPWO2024095537A5 (https=) 2024-09-26
JP7626257B2 true JP7626257B2 (ja) 2025-02-04

Family

ID=90930181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023577919A Active JP7626257B2 (ja) 2022-11-01 2023-07-14 キャパシタ

Country Status (4)

Country Link
US (1) US20250201493A1 (https=)
JP (1) JP7626257B2 (https=)
CN (1) CN120019725A (https=)
WO (1) WO2024095537A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219788A1 (en) 2004-03-18 2005-10-06 Nanosys, Inc. Nanofiber surface based capacitors
WO2019058922A1 (ja) 2017-09-19 2019-03-28 株式会社村田製作所 キャパシタ
US20210074477A1 (en) 2018-05-18 2021-03-11 Murata Manufacturing Co., Ltd. Integrated energy storage component
WO2021059570A1 (ja) 2019-09-25 2021-04-01 株式会社村田製作所 ナノ構造集合体およびその製造方法
WO2021229871A1 (ja) 2020-05-12 2021-11-18 株式会社村田製作所 構造体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219788A1 (en) 2004-03-18 2005-10-06 Nanosys, Inc. Nanofiber surface based capacitors
WO2019058922A1 (ja) 2017-09-19 2019-03-28 株式会社村田製作所 キャパシタ
US20210074477A1 (en) 2018-05-18 2021-03-11 Murata Manufacturing Co., Ltd. Integrated energy storage component
WO2021059570A1 (ja) 2019-09-25 2021-04-01 株式会社村田製作所 ナノ構造集合体およびその製造方法
WO2021229871A1 (ja) 2020-05-12 2021-11-18 株式会社村田製作所 構造体

Also Published As

Publication number Publication date
JPWO2024095537A1 (https=) 2024-05-10
WO2024095537A1 (ja) 2024-05-10
CN120019725A (zh) 2025-05-16
US20250201493A1 (en) 2025-06-19

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