WO2024095537A1 - キャパシタ - Google Patents

キャパシタ Download PDF

Info

Publication number
WO2024095537A1
WO2024095537A1 PCT/JP2023/026071 JP2023026071W WO2024095537A1 WO 2024095537 A1 WO2024095537 A1 WO 2024095537A1 JP 2023026071 W JP2023026071 W JP 2023026071W WO 2024095537 A1 WO2024095537 A1 WO 2024095537A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
dielectric layer
cross
occupation ratio
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/026071
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
創太 柳井
康弘 清水
真己 永田
暢明 白井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to CN202380073651.0A priority Critical patent/CN120019725A/zh
Priority to JP2023577919A priority patent/JP7626257B2/ja
Publication of WO2024095537A1 publication Critical patent/WO2024095537A1/ja
Priority to US19/068,170 priority patent/US20250201493A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22—Electrodes
    • H01G11/30—Electrodes characterised by their material
    • H01G11/32—Carbon-based
    • H01G11/40—Fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Definitions

  • This disclosure relates to capacitors, and more specifically, to capacitors having a conductor-dielectric-conductor structure.
  • Patent Document 1 describes a method of forming a capacitor having a metal-insulator-metal (MIM) structure by forming a fibrous member on a substrate (base surface) and then forming a lower plate (metal), an insulating layer, and an upper plate (metal) on the surface of the fibrous member.
  • MIM metal-insulator-metal
  • a dielectric layer can be formed on the surface of the fibrous conductive member, and then a conductor layer can be formed to form a capacitor with a conductor-dielectric-conductor structure.
  • VACNTs Vertically aligned carbon nanotubes
  • VACNTs can be used as multiple fibrous conductive members.
  • VACNTs can be obtained by growing them at high density on a substrate to which a catalyst is attached.
  • multiple adjacent VACNTs are entangled and integrated to form a forest.
  • the integrated VACNTs are covered with a dielectric layer and a conductive layer to form a composite bulk member, but the mechanical strength of the composite bulk member may not be sufficient. If the composite bulk member is damaged during use of the capacitor, the performance of the capacitor will decrease.
  • the objective of this disclosure is to provide a capacitor that includes a composite bulk member that has excellent mechanical strength.
  • the fibrous conductive member has a maximum height H max
  • the composite bulk member has one and other outer peripheral regions occupying an area from the outer edge of the composite bulk member to twice the maximum height Hmax , and a central region sandwiched between the one and other outer peripheral regions,
  • a capacitor is provided, in which at least one of the peripheral regions on one side and the other side includes a portion in which the total area occupation ratio S21 of the fibrous conductive member and the dielectric layer is higher than the total area
  • the fibrous conductive member has a maximum height H max
  • the composite bulk member has one and other outer peripheral regions occupying an area from the outer edge of the composite bulk member to twice the maximum height Hmax , and a central region sandwiched between the one and other outer peripheral regions,
  • a capacitor is provided, in which at least one of the peripheral regions on one side and the other side includes a portion in which the total area occupation ratio S22 of the fibrous conductive member, the dielectric layer and the conductor layer is
  • the present disclosure provides a capacitor that includes a composite bulk member that has excellent mechanical strength.
  • FIG. 1 is a schematic cross-sectional view of a capacitor according to first and second embodiments of the present disclosure
  • FIG. 2 is an enlarged view of part A in FIG. 2 is a schematic cross-sectional view taken along an in-plane direction of the substrate in FIG. 1
  • FIG. 1A to 1C are schematic cross-sectional views of capacitors according to Modification 1 of Embodiment 1 and Modification 2 of Embodiment 2 of the present disclosure.
  • FIG. 5 is an enlarged view of part B in FIG. 4 .
  • FIG. 11 is a schematic cross-sectional view of a capacitor according to a third embodiment of the present disclosure.
  • FIG. 7 is an enlarged view of part D in FIG. 6 .
  • FIG. 13 is a schematic cross-sectional view of a portion of a capacitor according to Modification 3 of Embodiment 3 of the present disclosure.
  • 1 is an electron microscope image taken from the side of a forest having tilted CNTs and a portion of a substrate obtained in Production Example 1.
  • 1 is an SEM image of a portion of the outer peripheral region of a polished XZ cross section of a composite bulk member obtained in Manufacturing Example 1.
  • 1 is an SEM image of a portion of the central region of a polished XZ cross section of a composite bulk member obtained in Manufacturing Example 1.
  • 1 is an SEM image of a portion of the outer peripheral region of a polished XY cross section of a composite bulk member obtained in Manufacturing Example 1.
  • 1 is an SEM image of a portion of the central region of a polished XY cross section of a composite bulk member obtained in Manufacturing Example 1.
  • FIG. 1 is a schematic cross-sectional view of a capacitor in the first embodiment.
  • FIG. 1 shows a cross section along the thickness direction of a substrate 10.
  • FIG. 1 shows the outer shape of the substrate 10 and the composite bulk member 20, and omits the fibrous conductive member 21, the dielectric layer 22, the conductor layer 23, and the space 24.
  • FIG. 2 is an enlarged view of part A in FIG. 1.
  • the fibrous conductive member 21 covered in sequence with the dielectric layer 22 and the conductor layer 23 is shown.
  • FIG. 3 is a schematic cross-sectional view along the in-plane direction of the substrate in FIG. 1.
  • the thickness direction of the substrate 10 is the Z direction.
  • a straight line that includes the center C of the substrate 10 when the capacitor 1 is viewed from the Z direction and extends along the Z direction is the central axis AX.
  • the center C of the substrate 10 is usually coaxial with the center of the capacitor 1.
  • the direction perpendicular to the Z direction of a cross section obtained by cutting the capacitor 1 at a plane that includes the central axis AX and extends in the Z direction is the X direction (also called the width direction in an XZ cross section).
  • the X direction is an example of a direction parallel to the in-plane direction of the substrate 10.
  • the direction perpendicular to the Z direction and the X direction is the Y direction (also called the width direction in a YZ cross section).
  • the surface obtained by cutting the capacitor 1 at a plane formed by a line extending in the X direction and a line extending in the Z direction and including the central axis AX is defined as an XZ cross section.
  • the XZ cross section is an example of a cross section along the thickness direction of the substrate 10.
  • the surface obtained by cutting the capacitor 1 at a plane formed by a line extending in the Y direction and a line extending in the Z direction and including the central axis AX is defined as a YZ cross section.
  • the YZ cross section is another example of a cross section along the thickness direction of the substrate 10.
  • the surface obtained by cutting the capacitor 1 at a plane formed by a line extending in the X direction and a line extending in the Y direction is defined as an XY cross section.
  • the XY cross section is a cross section parallel to the in-plane direction of the substrate 10.
  • the center C of the substrate 10 is the center of the smallest circle that contains the substrate 10 when the capacitor 1 is viewed from the Z direction.
  • the X direction is sometimes called the left-right direction.
  • the right side of an element refers to the side of the element to the right.
  • the left side of an element refers to the side of the element to the left.
  • the capacitor 1 includes a conductive substrate 10, a plurality of fibrous conductive members 21 disposed on the substrate 10 and electrically connected to the substrate 10, a dielectric layer 22 covering the surface of the fibrous conductive members 21, and a conductor layer 23 covering the surface of the dielectric layer 22.
  • the capacitor 1 may have a conductive member (not shown) in contact with the conductor layer 23.
  • the plurality of fibrous conductive members 21, the dielectric layer 22, the conductor layer 23, and spaces 24 formed between the plurality of fibrous conductive members covered by the dielectric layer 22 and the conductor layer 23 constitute a composite bulk member 20.
  • the spaces 24 may be filled with a filler such as a resin.
  • the conductive member will be described later.
  • the top of substrate 10 is the outer surface of substrate 10, which can be rephrased as a surface (surface 10a, described below) parallel to a plane (XY plane) formed by a straight line extending in the X direction and a straight line extending in the Y direction.
  • the dielectric layer 22 may cover the surface of the fibrous conductive members 21 (excluding the areas directly bonded to the substrate 10) as well as the portions of the surface 10a of the substrate 10 between the plurality of fibrous conductive members 21 where no fibrous conductive members 21 are arranged.
  • the dielectric layer 22 may be formed on the outside of the plurality of fibrous conductive members 21, continuous with a dielectric portion 22a that covers the portions of the surface 10a of the substrate 10 where no fibrous conductive members 21 are arranged.
  • the composite bulk member 20 does not include the dielectric portion 22a.
  • the conductor layer 23 may cover the dielectric layer 22 between the multiple fibrous conductive members 21 in addition to the dielectric layer 22 covering the surface of the fibrous conductive members 21.
  • the portion of the conductor layer 23 that covers the dielectric layer 22 between the multiple fibrous conductive members 21 may be understood as defining the bottom of the space 24 (e.g., the bottom of the trench).
  • the conductor layer 23 may be formed continuously with the conductor portion 23a that covers the dielectric portion 22a outside the multiple fibrous conductive members 21. However, the composite bulk member 20 does not include the conductor portion 23a.
  • the fibrous conductive member 21 is directly bonded to the substrate 10. More specifically, the fibrous conductive member 21 and the substrate 10 are bonded in direct contact with each other. The fibrous conductive member 21 is synthesized directly on the surface 10a of the substrate 10.
  • the multiple fibrous conductive members 21 are conductive (typically conductors), and can be at the same potential or voltage as one another by being electrically connected to the substrate 10.
  • a conductor-dielectric-conductor structure is formed by the fibrous conductive members 21, the dielectric layer 22, and the conductor layer 23.
  • Such a conductor-dielectric-conductor structure can be understood as corresponding to a so-called MIM structure (metal-insulator-metal structure).
  • a capacitor 1 having such a structure can obtain a large capacitance density due to the large specific surface area of the fibrous conductive members 21.
  • the fibrous conductive member 21 has a maximum height Hmax .
  • the composite bulk member 20 has outer peripheral regions R2 on one side and the other side occupying an area up to twice the maximum height Hmax in the direction from the outer edge of the composite bulk member 20 toward the central axis AX, and a central region R1 sandwiched between the outer peripheral regions R2 on one side and the other side.
  • the XZ cross section will be mainly used as an example of a cross section in the thickness direction.
  • the fibrous conductive members 21 in the outer peripheral region R2 are denser than in the central region R1. Therefore, the outer peripheral region R2 includes a portion where the total area occupied by the fibrous conductive members 21 and the dielectric layer 22 is higher than the total area occupied by the fibrous conductive members 21 and the dielectric layer 22 in the central region R1 .
  • the peripheral region R2 "including a portion having a high area occupancy ratio S21” means that the area occupancy ratio S21 in at least a portion of the peripheral region R2 in any one cross section in the thickness direction is higher than the area occupancy ratio S11 in a portion of the central region R1 in the cross section in the same thickness direction. It is not necessary that the area occupancy ratio S21 be higher than the area occupancy ratio S11 in the entire cross section in the thickness direction.
  • the area occupation ratio S21 is higher than the area occupation ratio S11 " can be rephrased as "the spaces 24 present in the outer peripheral region R2 are narrower than the spaces 24 present in the central region R1".
  • the composite bulk member 20 according to this embodiment has higher mechanical strength in the outer peripheral region R2.
  • the area occupation ratio S21 is higher than the area occupation ratio S11 " can also be rephrased as "the average number density N2 of the fibrous conductive members 21 present in the outer peripheral region R2 is higher than the average number density N1 of the fibrous conductive members 21 present in the central region R1".
  • the area occupancy ratio S21 is high means that the difference between the area occupancy ratios S11 and S21 is 5% or more. That is, S21 / S11 ⁇ 1.05. S21 / S11 may be 1.2 or more, 2 or more, or 5 or more.
  • the composite bulk member 20 is composed of a plurality of fibrous conductive members 21 (hereinafter referred to as conductive fibers 21), a dielectric layer 22, a conductor layer 23, and spaces 24 formed between a plurality of conductive fibers 21 (hereinafter also referred to simply as coated conductive fibers 21) coated with the dielectric layer 22 and the conductor layer 23.
  • the composite bulk member 20 can be determined from a cross section (e.g., an XZ cross section) in the thickness direction of the capacitor 1. As described above, the composite bulk member 20 does not include the dielectric portion 22a and the conductor portion 23a, and is therefore determined to exclude these.
  • the cross section (here, XZ cross section) in the thickness direction of the capacitor 1 including the center C is exposed by polishing.
  • the obtained XZ cross section (No. 1) is observed with a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the substrate 10 and the first member (not shown) arranged on the surface 10a of the substrate 10 and consisting of the conductive fiber 21, the dielectric layer 22 (and the dielectric portion 22a if present, the same below), the conductor layer 23 (and the conductor portion 23a if present, the same below), and the filling resin (corresponding to the above-mentioned space 24) can be confirmed.
  • a conductive member may be present.
  • the SEM image is subjected to image processing to identify and distinguish the conductive fiber 21, the dielectric layer 22, the conductor layer 23, the filling resin (space 24), and the conductive member in the first member. Elemental analysis by energy dispersive X-ray analysis (EDX) may also be used in combination for identification.
  • EDX energy dispersive X-ray analysis
  • the composite bulk member 20 is roughly rectangular.
  • the conductive fibers 21 near each of the four corners of the composite bulk member 20 are identified.
  • the portions of the SEM image including each corner may be enlarged so that the observation field is approximately 1 ⁇ m x 1 ⁇ m.
  • the dielectric layer 22 and the conductor layer 23 covering the leftmost conductive fiber 21 are determined. These may be continuous with the dielectric portion 22a and the conductor portion 23a, respectively.
  • the thickness of the dielectric layer 22 (and the dielectric portion 22a, the same below) covering the conductive fiber 21 is roughly uniform in terms of the manufacturing method. Therefore, the outer edge of the dielectric layer 22 covering the leftmost conductive fiber 21 can be determined taking into account the thickness of the dielectric layer 22 covering the other conductive fibers 21.
  • the thickness of the conductor layer 23 (and the conductor portion 23a, the same below) covering the conductive fiber 21 via the dielectric layer 22 is also roughly uniform in terms of the manufacturing method. Therefore, the outer edge of the conductor layer 23 covering the leftmost conductive fiber 21 can be determined taking into account the thickness of the conductor layer 23 covering the other conductive fibers 21.
  • a first straight line L1 is drawn that is tangent to the outer edge of the determined conductor layer 23 and parallel to the central axis AX.
  • the first straight line L1 defines the boundary (a virtual boundary, the same applies below) between the dielectric layer 22 and the dielectric portion 22a, and the boundary between the conductor layer 23 and the conductor portion 23a.
  • the dielectric layer 22 is located to the right, and the dielectric portion 22a is located to the left.
  • the conductor layer 23 is located to the right, and the conductor portion 23a is located to the left.
  • the above-mentioned dielectric portion 22a and conductor portion 23a are not included in the composite bulk member 20.
  • the rightmost conductive fiber 21 that is closest to the substrate 10 and located at the rightmost side of the first member is identified, and the dielectric layer 22 and conductor layer 23 that cover the rightmost conductive fiber 21 are determined.
  • a second straight line L2 that is tangent to the outer edge of this conductor layer 23 and parallel to the central axis AX is drawn.
  • the second straight line L2 defines the boundary between the dielectric layer 22 and the dielectric portion 22a, and the boundary between the conductor layer 23 and the conductor portion 23a.
  • the dielectric layer 22 is located to the left, and the dielectric portion 22a is located to the right.
  • the conductor layer 23 is located to the left, and the conductor portion 23a is located to the right.
  • the above-mentioned dielectric portion 22a and conductor portion 23a are not included in the composite bulk member 20.
  • the outer edge of the conductive layer 23 can be determined taking into account the thickness of the conductive layer 23 that covers the other conductive fibers 21.
  • the conductive member is not included in the composite bulk member 20.
  • the composite bulk member 20 is composed of a plurality of conductive fibers 21, a dielectric layer 22, a conductor layer 23, and a space 24 that are present in the region between the first line L1 and the second line L2.
  • the contact points (T1 and T2) between the first line L1 and the second line L2 and the composite bulk member 20 are points that indicate the outer edge of the composite bulk member 20 in the XZ cross section.
  • the contact points T1 and T2 are typically located on the surface 10a of the substrate 10.
  • the maximum height Hmax is determined, for example, from the SEM image of the XZ cross section (No. 1) described above.
  • the end of the conductive fiber 21 that is the furthest away from the surface 10a of the substrate 10 in the Z direction is identified, and the distance in the Z direction between this end and the surface 10a is the maximum height Hmax .
  • Central region R1, peripheral region R2> 1 in the XZ cross section, the outer peripheral regions R2 are disposed at two locations, one on one side and the other on the other side (hereinafter also referred to as the left and right sides) in the X direction, sandwiching the central region R1.
  • the outer peripheral regions R2 on one side and the other side face each other via the central region R1.
  • the peripheral region R2 is determined using the SEM image of the XZ cross section (No. 1) and the maximum height Hmax .
  • points (P1 and P2) located at a distance of twice the maximum height Hmax from the contact points T1 and T2 toward the central axis AX are plotted.
  • the region including the point P1 and to the left of the third straight line L3 extending in the Z direction is the peripheral region R2 on one side.
  • the region including the point P2 and to the right of the fourth straight line L4 extending in the Z direction is the peripheral region R2 on the other side.
  • the region sandwiched between the third straight line L3 and the fourth straight line L4 is the central region R1.
  • the area occupation ratio S11 is the total area occupation ratio of the conductive fibers 21 and the dielectric layer 22 in any part of the central region R1 in a cross section in the thickness direction (e.g., XZ cross section).
  • the area occupation ratio S21 is the total area occupation ratio of the conductive fibers 21 and the dielectric layer 22 in any part of the peripheral region R2 in the same cross section in the thickness direction. Even if the area occupation ratio S21 in a part of the peripheral region R2 is lower than the area occupation ratio S11 , it is sufficient that the area occupation ratio S21 in the other part of the peripheral region R2 in the cross section in the thickness direction is higher than the area occupation ratio S11 .
  • the area occupation ratio S21 may be higher than the area occupation ratio S11 .
  • both of the peripheral regions R2 on one side and the other side may include a portion in which the area occupancy ratio S21 is higher than the area occupancy ratio S11 . This protects the relatively weak central region R1 from the left and right, thereby further improving the mechanical strength of the composite bulk member 20.
  • the outer peripheral region R2 may include a portion where the area occupation ratio S21 is higher than the area occupation ratio S11 .
  • the mechanical strength of the composite bulk member 20 is further improved. "Including a high portion... in a plurality of thickness direction cross sections” means that the outer peripheral region R2 in at least two different thickness direction cross sections includes a portion where the area occupation ratio S21 is higher than the area occupation ratio S11 . It is not necessary that the outer peripheral region R2 includes a portion where the area occupation ratio S21 is higher than the area occupation ratio S11 in all thickness direction cross sections.
  • the outer peripheral regions R2 on one side and the other side may each include a portion in which the area occupation ratio S21 is higher than the area occupation ratio S11 .
  • the different thickness cross sections can be XZ cross sections and YZ cross sections.
  • the different thickness cross sections can be obtained by rotating the XZ cross section around the central axis AX by less than 360 degrees.
  • the area occupation ratio S11 may be 0.1 or more, 0.15 or more, or 0.20 or more.
  • the area occupation ratio S11 may be 0.5 or less, 0.4 or less, or 0.35 or less.
  • the area occupation ratio S21 may be 0.2 or more, 0.25 or more, or 0.30 or more.
  • the area occupation ratio S21 may be 0.7 or less, 0.5 or less, or 0.45 or less.
  • the area occupancy ratios S11 and S21 are calculated as follows using the SEM image of the above XZ cross section (No. 1). In the SEM image, the composite bulk member 20, the peripheral region R2, and the central region R1 are identified. In the composite bulk member 20, the conductive fiber 21, the dielectric layer 22, the conductor layer 23, and the filling resin (space 24) are distinguished.
  • the total area of the conductive fibers 21 and the dielectric layer 22 in the right peripheral region R2 is divided by the area of the peripheral region R2 (i.e., the total area including the conductive fibers 21, the dielectric layer 22, the conductor layer 23, and the filling resin). This calculates the area occupancy ratio S21 of the right peripheral region R2. Similarly, the area occupancy ratio S21 of the left peripheral region R2 is calculated. Similarly, the area occupancy ratio S11 of the central region R1 is calculated.
  • the observation field of view at this time may be large enough to observe only a portion of the central region R1. Similarly, the observation field of view may be large enough to observe only a portion of the peripheral region R2.
  • the size of the observation field of view may be, for example, about 1 ⁇ m x 1 ⁇ m. This makes it easier to distinguish between the conductive fiber 21, the dielectric layer 22, the conductor layer 23, and the filling resin.
  • the area occupancy ratios S 11 and S 21 in a plurality of thickness direction cross sections are calculated as follows. First, for the composite bulk member 20 with the XZ cross section (No. 1) exposed, another thickness direction cross section (for example, the YZ cross section, No. 2) is exposed by polishing, and the SEM image is observed. Since the maximum height H max has already been measured, the outer peripheral region R2 on one side is determined based on this. Next, the image processing is performed as described above (using EDX analysis in combination as necessary, the same applies below) to calculate the area occupancy ratio S 21 of the outer peripheral region R2 on one side that appears in the SEM image. Although the cross section (No. 1) is exposed by polishing, and the SEM image is observed. Since the maximum height H max has already been measured, the outer peripheral region R2 on one side is determined based on this. Next, the image processing is performed as described above (using EDX analysis in combination as necessary, the same applies below) to calculate the area occupancy ratio S 21 of the outer peripheral region R2 on one side that appears in
  • the remaining part of the cross section (No. 2) may be considered to have the same configuration as the part of the XZ cross section. Therefore, the area occupancy ratio S 21 of the outer peripheral region R2 on the other side can also be considered to be the same as that on the one side.
  • the area occupancy ratio S11 of the other parts of the central region R1 can be considered to be the same as that shown in the SEM image of the cross section (No. 2). This operation is repeated for a plurality of cross sections in different thickness directions as necessary. Then, a plurality of SEM images are obtained, and image processing or the like is performed to calculate the area occupancy ratios S11 and S21 in the cross sections in the plurality of thickness directions.
  • the SEM image of the XZ cross section (No. 1) used above is an SEM image of a cross section in the thickness direction of the substrate 10 can be confirmed by the thickness and width of the substrate 10 being observed. If the thickness of the substrate 10 measured from the SEM image is greater than the original thickness of the substrate, the cross section can be determined not to be a cross section in the thickness direction. "Larger than the original thickness of the substrate” means that the thickness of the substrate 10 in the SEM image is 5% or more greater than the original thickness of the substrate 10.
  • the cross section can also be determined not to be a cross section in the thickness direction.
  • “Smaller than the original width of the substrate” means that the width of the substrate 10 in the SEM image is 5% or more smaller than the original width of the substrate 10.
  • the observation field of the SEM In order to confirm that the above SEM image is of a cross section in the thickness direction, it is desirable for the observation field of the SEM to be large enough (e.g., 5 ⁇ m x 5 ⁇ m or more) to confirm the front surface 10a, back surface 10b, and both ends of the substrate 10.
  • the observation field of view for identifying and/or distinguishing the components of the composite bulk member 20 and calculating the area occupancy ratio may be narrower (e.g., about 1 ⁇ m x 1 ⁇ m).
  • the conductive fiber 21 is not particularly limited as long as its longitudinal dimension (length) is (preferably significantly) larger than the maximum cross-sectional dimension perpendicular to the longitudinal direction and the conductive fiber 21 is roughly in the form of a long, thin thread.
  • the average length of the conductive fibers 21 may be longer in that the capacity density per area can be increased.
  • the average length of the conductive fibers 21 may be, for example, several ⁇ m or more, 20 ⁇ m or more, 50 ⁇ m or more, 100 ⁇ m or more, 500 ⁇ m or more, 750 ⁇ m or more, 1000 ⁇ m or more, or 2000 ⁇ m or more.
  • the upper limit of the average length of the conductive fibers 21 may be appropriately selected, but the length of the conductive fibers 21 may be, for example, 10 mm or less, 5 mm or less, or 3 mm or less.
  • the average length of the conductive fibers 21 is 50 ⁇ m or more.
  • the average length of the conductive fibers 21 may be 50 ⁇ m or more and 3 mm or less.
  • the average length of the conductive fibers 21 can be calculated from the SEM image of the XZ cross section (No. 1) above.
  • the average length of the conductive fibers 21 is the average value of the lengths of at least five or more conductive fibers 21.
  • the average number density (also referred to as "average number density") of the conductive fibers 21 may be larger in that it can increase the volume density per area and increase the mechanical strength of the composite bulk member 20.
  • the average number density N2 of the conductive fibers 21 in the outer peripheral region R2 may be 108 fibers/ cm2 or more.
  • the average number density N2 may be 1013 fibers/ cm2 or less, 1011 fibers/ cm2 or less, or 1010 fibers/ cm2 or less.
  • the conductive fibers 21 may have an average length of 50 ⁇ m or more and an average number density N2 in the outer peripheral region R2 of 10 8 fibers/cm 2 or more. This makes it easier for the conductive fibers 21 densely packed in the outer peripheral region R2 to come into contact with other conductive fibers 21, and the mechanical strength of the composite bulk member 20 is more likely to be increased.
  • the ratio N2 / N1 of the average number density N2 of the multiple conductive fibers 21 in the central region R1 to the average number density N1 is, for example, 2 or more. This makes it easier to increase the mechanical strength of the composite bulk member 20.
  • the ratio N2 / N1 may be 5 or more, 10 or more, or 50 or more.
  • the ratio N2 / N1 may be 1000 or less, 500 or less, or 100 or less.
  • the average number density of the conductive fibers 21 can be calculated using the sample used to calculate the area occupancy ratios S11 and S21 .
  • the XY cross section of the sample at a first position where the height H from the surface 10a of the substrate 10 is 20% or less (typically 10% or less) of the maximum height Hmax is exposed by polishing.
  • the XY cross section obtained may cut the dielectric portion 22a or the conductor portion 23a, or may not cut the dielectric portion 22a or the conductor portion 23a.
  • the obtained XY cross section shows a part (which may be half or less) of the XY cross section of the composite bulk member 20, but the remaining part of the XY cross section may be considered to have the same configuration as the part of the XY cross section obtained.
  • the obtained XY cross section is observed with an SEM, and a central region R1 and a peripheral region R2 are determined as follows.
  • the SEM image shows the outer edge of the composite bulk member 20.
  • one side of the outer edge of the composite bulk member 20 in the SEM image is a cutting line CL for exposing the XZ cross section.
  • the SEM image may further show the surface 10a of the substrate 10, or the dielectric portion 22a or conductor portion 23a covering the surface 10a.
  • a point that is twice the distance of the already calculated maximum height Hmax toward the opposite outer edge is plotted. This operation is repeated for multiple different points (e.g., four points) on the outer edge, and a line that includes the plotted multiple points and is similar to the outer edge of the composite bulk member 20 excluding the cutting line CL is drawn.
  • This line is the boundary between the outer peripheral region R2 and the central region R1.
  • the region from this line to the outer edge of the composite bulk member 20 is the outer peripheral region R2, and the inner region surrounded by this line and the cutting line CL is the central region R1.
  • the outer peripheral region R2 is arranged to surround the central region R1, as can be seen from Figure 3.
  • Part of the outer edge of the composite bulk member 20 is indicated by lines L5 and L6.
  • Part of the boundary between the outer peripheral region R2 and the central region R1 is indicated by lines L7 and L8.
  • Lines L5 and L6 include contact points T1 and T2 in Figure 1 and correspond to lines along the Y direction.
  • Lines L7 and L8 include points P1 and P2 in Figure 1 and correspond to lines along the Y direction.
  • the number of conductive fibers 21 present in a portion of the determined peripheral region R2 (e.g., a region of 5 ⁇ m ⁇ 5 ⁇ m) is counted to determine the number of conductive fibers 21 per unit area (number density). This operation is repeated to obtain number densities in five or more fields of view, and their average value is defined as the average number density N2 of the conductive fibers 21 in the peripheral region R2.
  • the average number density N1 of the conductive fibers 21 in the central region R1 is calculated in the same manner.
  • the SEM image of the XY cross section used above is an SEM image of a cross section parallel to the in-plane direction of the substrate 10 can be confirmed by the cross-sectional shape of the conductive fiber 21.
  • the cross section of the conductive fiber 21 is flat, it can be determined that the cross section is not an XY cross section.
  • the cross section of the conductive fiber 21 is flat means that the ratio of the major axis to the minor axis of the cross section of the conductive fiber 21 (major axis/minor axis) is 1.41 or more.
  • the major axis is the longest diameter that passes through the center of the cross section of the conductive fiber 21.
  • the minor axis is the shortest diameter that passes through the center of the cross section of the conductive fiber 21.
  • the center of the cross section of the conductive fiber 21 is the center of the smallest circle that contains the cross section of the conductive fiber 21.
  • the maximum cross-sectional dimension of the conductive fiber 21 may be, for example, 0.1 nm or more, 1 nm or more, or 10 nm or more.
  • the maximum cross-sectional dimension of the conductive fiber 21 may be, for example, 1 nm or more, or 10 nm or more.
  • the maximum cross-sectional dimension of the conductive fiber 21 may be less than 1000 nm, 800 nm or less, or 600 nm or less.
  • the maximum cross-sectional dimension of the conductive fiber 21 can be calculated from the SEM image of the XY cross section used to calculate the average number densities N1 and N2 .
  • the maximum cross-sectional dimension of the conductive fiber 21 is the average value of the maximum cross-sectional dimensions of at least five or more conductive fibers 21.
  • the conductive fiber 21 may be a conductive nanofiber (having a maximum cross-sectional dimension in the nanoscale (1 nm or more and less than 1000 nm)).
  • the conductive nanofiber may be, for example, a conductive nanotube (hollow, preferably cylindrical) or a conductive nanorod (solid, preferably cylindrical). Nanorods that are conductive (including semiconductive) are also called nanowires.
  • Conductive nanofibers that can be used in the present disclosure include, for example, carbon nanofibers.
  • Conductive nanotubes that can be used in the present disclosure include, for example, metal nanotubes, organic conductive nanotubes, and inorganic conductive nanotubes.
  • the conductive nanotubes can be carbon nanotubes or titania carbon nanotubes.
  • Conductive nanorods (nanowires) that can be used in the present disclosure include, for example, silicon nanowires, metal nanowires (particularly silver nanowires), and conductive polymer wires.
  • the conductive fibers 21 may have a higher strength than the dielectric layer 22 in that the mechanical strength of the composite bulk member 20 is more likely to be increased.
  • the strength of the conductive fibers 21 may be 5 MPa/(nm) 2 or more and 150 Gpa/(nm) 2 or less. This allows the conductive fibers 21 to function as a core material of the composite bulk member 20, and is expected to suppress the occurrence of cracks in the composite bulk member 20.
  • the strength of the conductive fibers 21 may be 10 MPa/(nm) 2 or more, or 10 Gpa/(nm) 2 or more.
  • the strength of the conductive fibers 21 may be 100 Gpa/(nm) 2 or less.
  • the conductive fiber 21 having a strength of 5 Mpa/(nm) 2 or more and 150 Gpa/(nm) 2 or less may be at least one type selected from the group consisting of carbon nanotubes, metal nanowires, and conductive polymer wires.
  • the conductive fiber 21 may be a carbon nanotube.
  • Carbon nanotubes have electrical and thermal conductivity.
  • the chirality of the carbon nanotubes is not particularly limited, and they may be either semiconducting or metallic, or a mixture of these may be used. From the perspective of reducing the resistance value, a higher ratio of metallic types is preferable.
  • the number of layers of the carbon nanotube is not particularly limited, and it may be either a single-walled SWCNT (single-walled carbon nanotube) or a multi-walled carbon nanotube (MWCNT) with two or more layers.
  • the conductive fibers 21 may be so-called vertically aligned carbon nanotubes (VACNTs).
  • VACNTs have a large specific surface area.
  • VACNTs can be grown and manufactured in a vertically aligned state on the substrate 10, which is advantageous in that the maximum height H max can be easily controlled.
  • the substrate 10 has two main surfaces (a front surface 10a and a back surface 10b) facing each other, and may be in the form of, for example, a plate (substrate), a foil, a film, a block, or the like.
  • the material constituting the substrate 10 may be appropriately selected as long as it is conductive and can be electrically connected to the multiple conductive fibers 21.
  • it may be a semiconductor material such as silicon, a conductive material such as metal (copper, aluminum, nickel), or an insulating (or relatively low conductive) material such as ceramic (silicon oxide) or resin.
  • the substrate 10 may be made of a single material, a mixture of two or more materials, or a composite composed of two or more materials. It is preferable that the material constituting the substrate 10 is a metal, since it is easily usable as a contact with the outside, can have a low resistance value, and can withstand high temperatures.
  • the thickness of the substrate 10 is not particularly limited and can vary depending on the application of the capacitor 1.
  • the substrate 10 may be provided with electrodes for contacting the outside and wiring for ensuring electrical conduction.
  • the dielectric material constituting the dielectric layer 22 may be appropriately selected.
  • silicon dioxide, aluminum oxide, silicon nitride, tantalum oxide, hafnium oxide, barium titanate, and lead zirconate titanate may be used alone or in combination of two or more (for example, stacked).
  • the thickness of the dielectric layer 22 may be 10 nm or more, or 15 nm or more. By making the thickness of the dielectric layer 22 10 nm or more, it is possible to improve the insulation properties and reduce the leakage current.
  • the thickness of the dielectric layer 22 may be 1 ⁇ m or less, or 100 nm or less, or 70 nm or less. By making the thickness of the dielectric layer 22 1 ⁇ m or less, it is possible to obtain a larger electrostatic capacitance. In one embodiment, the thickness of the dielectric layer 22 is 10 nm or more and 1 ⁇ m or less.
  • the thickness of the dielectric layer 22 can be calculated from the SEM image of the XY cross section used to calculate the average number densities N1 and N2 .
  • the thickness of the dielectric layer 22 is the average value of the thicknesses of the dielectric layer 22 covering at least five or more conductive fibers 21.
  • the material constituting the dielectric portion 22a and the thickness of the dielectric portion 22a may be similar to that of the dielectric layer 22.
  • Conductive layer Examples of the conductive material constituting the conductive layer 23 include metals and conductive polymers (polymeric materials having conductivity and/or having conductivity imparted thereto, also referred to as organic conductive materials). These may be used alone or in combination of two or more.
  • the conductive layer 23 may be a laminate of multiple layers made of different conductive materials.
  • the metals include silver, gold, copper, platinum, aluminum, and alloys containing at least two of these metals.
  • the conductive polymers include PEDOT (polyethylenedioxythiophene), PPy (polypyrrole), and PANI (polyaniline), which can be doped with dopants such as organic sulfonic acid compounds, such as polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyacrylicsulfonic acid, polymethacrylicsulfonic acid, poly-2-acrylamido-2-methylpropanesulfonic acid, and polyisoprenesulfonic acid.
  • organic sulfonic acid compounds such as polyvinylsulfonic acid, polystyrenesulfonic acid, polyallylsulfonic acid, polyacrylicsulfonic acid, polymethacrylicsulfonic acid, poly-2-acrylamido-2-methylpropanesulfonic acid, and polyisopre
  • the thickness of the conductor layer 23 may be 3 nm or more, or 10 nm or more. By making the thickness of the conductor layer 23 3 nm or more, the resistance value of the conductor layer 23 itself can be reduced.
  • the thickness of the conductor layer 23 may be 500 nm or less, or 100 nm or less. In one embodiment, the thickness of the conductor layer 23 is 3 nm or more and 500 nm or less.
  • the thickness of the conductive layer 23 can be calculated from the SEM image of the XY cross section used to calculate the average number densities N1 and N2 .
  • the thickness of the conductive layer 23 is the average value of the thicknesses of the conductive layer 23 covering at least five or more conductive fibers 21.
  • the material constituting the conductive portion 23a and the thickness of the conductive portion 23a may be similar to that of the conductive layer 23.
  • Spaces 24 are formed between the coated conductive fibers 21.
  • the spaces 24 become smaller, and the mechanical strength of the composite bulk member 20 is increased.
  • the capacitor 1 may have a conductive member in contact with the conductive layer 23.
  • the conductive member is electrically connected to the conductive layer 23 and serves to lead the electrode to the outside of the capacitor 1.
  • the conductive member does not contact the conductive fiber 21, the dielectric layer 22, or the substrate 10.
  • the boundary between the conductive member and the conductive layer 23 can be confirmed in an SEM image.
  • the boundary between the conductive member and the conductive layer 23 can be identified by elemental analysis using EDX.
  • the boundary between the conductive member and the conductive layer 23 may be determined from the thickness of the conductive layer 23 in the portion that is not in contact with the conductive member.
  • the conductive member is formed, for example, by applying/supplying carbon paste or a conductive polymer material to a specified surface/portion.
  • Carbon paste and conductive polymer materials generally have a relatively high viscosity, making it difficult for them to penetrate into the space 24 and reach the depths of the space 24 (for example, the surface 10a of the substrate 10). Therefore, the space 24 is maintained between the coated conductive fibers 21.
  • the capacitor 1 of this embodiment can be obtained, for example, by a manufacturing method including the following: (a) depositing a catalyst on the surface 10a of the substrate 10 so that the amount of the catalyst deposited is greater on the outer edge than on the center; (b) growing a plurality of conductive fibers 21 on the surface 10a of the substrate 10 using a catalyst as a nucleus, thereby preparing a forest composed of the plurality of conductive fibers 21 directly bonded to the substrate 10 at one end; (c) forming a dielectric layer 22 (and dielectric portion 22a, if present, the same below) covering the surfaces of the multiple conductive fibers 21 by a sol-gel method; and (d) forming a conductor layer 23 (and conductor portion 23a, if present, the same below) covering the surface of the dielectric layer 22. Steps (a) to (d) will now be described in more detail.
  • Step (a) First, a catalyst is applied to the surface 10a of the substrate 10. Vertically aligned carbon nanotubes (VACNT, conductive fibers 21) grow using this catalyst as a nucleus. By applying the catalyst so that the amount of applied catalyst is greater on the outer edge of the surface 10a of the substrate 10 than in the center, a dense portion of VACNT can be formed on the edge of the resulting forest.
  • VACNT Vertically aligned carbon nanotubes
  • the substrate 10 may be a synthetic substrate for growing VACNTs.
  • the material of the synthetic substrate is not particularly limited, and may be, for example, silicon oxide, silicon, gallium arsenide, aluminum, SUS, etc.
  • a conductive substrate 10 is used as the synthetic substrate.
  • the catalyst may be iron, nickel, platinum, cobalt, or an alloy containing these metals.
  • the catalyst may be attached to the substrate 10 by chemical vapor deposition (CVD), sputtering, physical vapor deposition (PVD), atomic layer deposition (ALD), or the like, and may be combined with lithography, etching, or other techniques in some cases.
  • Step (b) Next, using the catalyst as a nucleus, a plurality of VACNTs are grown on the surface 10a of the substrate 10. This results in a forest composed of a plurality of VACNTs directly bonded to the substrate 10 at one end.
  • the method for growing VACNT is not particularly limited, and CVD, plasma-enhanced CVD, etc. can be used under heating as necessary.
  • the gas used is not particularly limited, and for example, at least one selected from the group consisting of carbon monoxide, methane, ethylene, and acetylene, or a mixture of at least one of these with hydrogen and/or ammonia, etc. can be used. If desired, moisture may be present in the ambient atmosphere when growing VACNT. As a result, VACNT grows on the substrate 10 with the catalyst as a nucleus.
  • the end of the VACNT on the surface 10a side of the substrate 10 is the fixed end fixed to the substrate 10 (generally via a catalyst), and the opposite end of the VACNT is the free end, which is the growth point.
  • the length and diameter of the VACNT can vary depending on parameters such as gas concentration, gas flow rate, and temperature. In other words, the length and diameter of the VACNT can be adjusted by appropriately selecting these parameters.
  • a forest of VACNTs is created on the substrate 10.
  • the length of each VACNT in the resulting forest may vary (e.g., within-plane variation) on the free end side due to differences in growth rate, etc.
  • the catalyst may become inactivated midway through the synthesis of the VACNT, resulting in the existence of carbon nanotubes (CNTs) whose growth stops.
  • CNTs carbon nanotubes
  • the multiple VACNTs (conductive fibers 21) obtained as described above are placed on the substrate 10 and are directly bonded to the substrate 10 at one end. However, as can be understood from the above explanation, some of the CNTs do not need to be directly bonded to the substrate 10.
  • Step (c) Next, a dielectric layer 22 that covers at least the surface of the VACNT is formed by a sol-gel method.
  • the thickness of the dielectric layer 22 formed can be controlled by appropriately selecting or setting the conditions for carrying out the sol-gel method.
  • the composition of the liquid used in the sol-gel method, the solvent used for the liquid e.g., water, ethanol, isopropanol, acetone
  • the film formation time, the stirring speed, the temperature, etc. can be appropriately selected or set.
  • the dielectric layer 22 is formed by drying to remove the solvent.
  • Step (d) Subsequently, a conductive layer 23 is formed to cover the surface of the dielectric layer 22 .
  • the deposition method of the conductive layer 23 is not particularly limited, and liquid phase deposition methods, vapor phase deposition methods, and combinations thereof may be used.
  • Liquid phase deposition methods may be, for example, the sol-gel method, plating, etc.
  • Vapor phase deposition methods may be, for example, ALD, sputtering, CVD, etc.
  • the conductor layer 23 can be formed by a liquid phase film formation method using a conductive polymer. More specifically, the conductor layer 23 can be formed by applying/supplying (e.g., coating or immersion) a liquid composition in which a conductive polymer is dissolved or dispersed in an organic solvent to a predetermined surface/portion.
  • the conductive polymer can easily penetrate into the space formed between multiple VACNTs coated with the dielectric layer 22, and the conductor layer 23 can be appropriately formed even in the deep part of the space (e.g., the bottom).
  • the capacitor 1 shown in Figures 1, 2 and 3 can be manufactured.
  • Fig. 4 is a schematic cross-sectional view of a capacitor according to Modification 1 of Embodiment 1.
  • Fig. 4 is a cross-section corresponding to Fig. 1.
  • Fig. 5 is an enlarged view of part B in Fig. 4, and corresponds to Fig. 2.
  • Modification 1 differs from embodiment 1 in the external shape of the composite bulk member. This different configuration is explained below. The other configuration is the same as embodiment 1, so the same reference numerals as embodiment 1 are used and the explanation is omitted.
  • the peripheral region R2 includes a portion where the area occupied by the conductive fibers 21 and the dielectric layer 22 is higher than the area occupied by the conductive fibers 21 and the dielectric layer 22 in the central region R1 ( S21 ).
  • the conductive fibers 21 are inclined with respect to the Z direction or bent in the X direction, at least two conductive fibers 21 can be in contact with each other in the outer peripheral region R2, either through the dielectric layer 22 or without the dielectric layer 22.
  • the composite bulk member 20A is less likely to deform due to an external force. This also further improves the mechanical strength of the composite bulk member 20A.
  • the capacitor 1A can be obtained, for example, by a manufacturing method including: (a') preparing a forest of VACNTs (conductive fibers 21) disposed on a surface 10a of a substrate 10 and directly bonded to the substrate 10 at one end; (b') tilting the VACNTs on the outside of the forest towards the center; (c) forming a dielectric layer 22 that covers the surfaces of the plurality of VACNTs by a sol-gel method; and (d) forming a conductive layer 23 that covers the surface of the dielectric layer 22.
  • a manufacturing method including: (a') preparing a forest of VACNTs (conductive fibers 21) disposed on a surface 10a of a substrate 10 and directly bonded to the substrate 10 at one end; (b') tilting the VACNTs on the outside of the forest towards the center; (c) forming a dielectric layer 22 that covers the surfaces of the plurality of VACNTs by a sol-gel method; and (d) forming a
  • Step (b') will be described in detail below.
  • Step (a') is carried out in the same manner as steps (a) and (b) of embodiment 1, except that the catalyst is uniformly attached to the entire surface 10a of the substrate 10.
  • Steps (c) and (d) are carried out in the same manner as steps (c) and (d) of embodiment 1.
  • Step (b') The VACNTs at the edge of the resulting forest are tilted towards the center.
  • the VACNTs at the edge of the forest can be tilted toward the center.
  • the VACNTs especially those on the outside of the forest, tend to aggregate with each other.
  • the VACNTs near the center of the forest tend to remain upright. As a result, the VACNTs at the edge tilt toward the center.
  • the solvent is selected taking into consideration the wettability of the VACNT. If the wettability of the VACNT is too low, the VACNTs will not easily aggregate together. On the other hand, if the wettability of the VACNT is too high, the VACNTs will excessively aggregate together, making it difficult to obtain a composite bulk member 20A suitable for the capacitor 1A.
  • Suitable solvents include, for example, water, ethanol, isopropanol, and acetone. Of these, ethanol is preferred.
  • a surfactant may be added to the solvent. This allows the wettability of the VACNT to be easily adjusted.
  • the surfactant may be anionic.
  • the surfactant is appropriately selected taking into consideration the charge and molecular weight of the hydrophilic group. Examples of surfactants include sodium dodecyl sulfate, cetyltrimethylammonium bromide, and sodium dodecylbenzenesulfonate.
  • the amount of surfactant added is appropriately set taking into consideration the wettability of the VACNT.
  • the immersion conditions are also set taking into consideration the wettability of VACNT.
  • Immersion may be performed by immersing the forest-formed substrate 10 in a solvent at room temperature (23°C ⁇ 3°C) at a speed of 2 to 10 mm/sec (typically 5 mm/sec) so that the angle between the substrate 10 and the liquid surface is approximately 90 degrees, in order to prevent excessive aggregation.
  • Non-Patent Document 1 For information on forest aggregation, see Non-Patent Document 1.
  • the material of the dielectric layer 22 may be added to the solvent. This allows the bath used in step (b') to be used as is to carry out step (c). Steps (b') and (c) are carried out simultaneously or continuously in the same bath. In other words, the aggregation of the VACNTs and the attachment of the material of the dielectric layer 22 proceed simultaneously or continuously. By attaching the material of the dielectric layer 22 to the surface of the VACNTs, it becomes easier to maintain the appropriate aggregation state between the VACNTs, and further aggregation caused by the subsequent drying is suppressed. In this way, in terms of the ease of controlling the aggregation state, steps (b') and (c) may be carried out simultaneously or continuously. In this case, the film formation time may be 1 to 3 hours (typically 1.5 hours), and the stirring speed may be 150 to 500 rpm (typically 300 rpm).
  • the capacitor 1A shown in Figures 4 and 5 can be manufactured.
  • the second embodiment differs from the first embodiment in the elements used when calculating the area occupation ratio. Specifically, when calculating the area occupation ratio, the area of the conductor layer 23 is used in addition to the areas of the conductive fibers 21 and the dielectric layer 22.
  • the other configurations are the same as those of the first embodiment, and the same reference numerals as those of the first embodiment are used and the description thereof is omitted.
  • the second embodiment will be described using the same Figures 1 to 3 as those of the first embodiment.
  • the peripheral region R2 includes a portion in which the total area occupation ratio S22 of the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 is higher than the total area occupation ratio S12 of the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 in the central region R1.
  • the area occupation ratio S22 is higher than the area occupation ratio S12 " can also be rephrased as "the space existing in the outer peripheral region R2 is smaller than the space existing in the central region R1.” Therefore, compared to a composite bulk member having a uniform area occupation ratio, the composite bulk member 20 according to this embodiment has higher mechanical strength in the outer peripheral region R2. Also in this embodiment, by increasing the area occupation ratio S22 only in the outer peripheral region R2, it is possible to improve the mechanical strength of the composite bulk member 20 while suppressing deterioration in the performance of the capacitor 1.
  • the area occupancy ratio S22 is high means that the difference between the area occupancy ratios S12 and S22 is 5% or more. That is, S22 / S12 ⁇ 1.05. S22 / S12 may be 1.2 or more, 2 or more, or 5 or more.
  • the area occupation ratios S 12 and S 22 can be calculated in the same manner as in the first embodiment, except that the total area of the conductive fibers 21, the dielectric layer 22 and the conductive layer 23 is divided by the area of the central region R1 or the peripheral region R2.
  • the area occupation ratio S 12 may be 0.10 or more, 0.15 or more, or 0.20 or more.
  • the area occupation ratio S 12 may be 0.50 or less, 0.40 or less, or 0.35 or less.
  • the area occupation ratio S22 may be 0.2 or more, 0.25 or more, or 0.30 or more.
  • the area occupation ratio S22 may be 0.70 or less, 0.50 or less, or 0.45 or less.
  • the conductive fibers 21 are inclined with respect to the Z direction or bent in the X direction. Therefore, the spaces 24 that existed in the peripheral region R2 are compressed and reduced in size.
  • the peripheral region R2 includes a portion where the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 is a higher proportion S22 than the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 in the central region R1 .
  • the third embodiment differs from the first embodiment in the elements and cross sections used when calculating the area occupancy ratio.
  • the different configurations are described below.
  • the other configurations are the same as those of the first embodiment, and the same reference numerals as those of the first embodiment are used and the description thereof is omitted.
  • FIG. 6 is a schematic cross-sectional view of a capacitor in embodiment 3.
  • FIG. 6 shows a cross-section along the in-plane direction of the substrate 10.
  • FIG. 6 shows the substrate 10 and the outer edge of the composite bulk member 20B, and omits the conductive fiber 21, the dielectric layer 22, the conductor layer 23, and the space 24.
  • FIG. 7 is an enlarged view of part D in FIG. 6.
  • FIG. 7 shows the conductive fiber 21, which is successively covered with the dielectric layer 22 and the conductor layer 23.
  • FIG. 7 shows only the substrate 10, the conductive fiber 21, the dielectric layer 22, the conductor layer 23, and a part of the space 24.
  • FIG. 7 corresponds to the I-I cross section in FIG. 2.
  • the conductive fibers 21 constituting the composite bulk member 20B have a maximum height Hmax .
  • the composite bulk member 20B has an outer peripheral region R2 ranging from the outer edge of the composite bulk member 20B to twice the maximum height Hmax , and a central region R1 surrounded by the outer peripheral region R2.
  • the conductive fibers 21 in the outer peripheral region R2 are denser than those in the central region R1. Therefore, the outer peripheral region R2 includes a portion where the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 is higher than the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 in the central region R1 ( S23) .
  • the outer peripheral region R2 "including a portion with a high area occupancy ratio S23” means that the area occupancy ratio S23 in at least a portion of the outer peripheral region R2 in any one XY cross section is higher than the area occupancy ratio S13 in a portion of the central region R1 in the same XY cross section. It is not necessary that the area occupancy ratio S23 be higher than the area occupancy ratio S13 in the entire XY cross section.
  • the area occupation ratio S23 is higher than the area occupation ratio S13 " can be rephrased as "the space 24 existing in the outer peripheral region R2 is narrower than the space 24 existing in the central region R1". Therefore, compared with a composite bulk member having a uniform area occupation ratio, the composite bulk member 20B according to this embodiment has a higher mechanical strength in the outer peripheral region R2. In this embodiment as well, by increasing the area occupation ratio S23 only in the outer peripheral region R2, it is possible to improve the mechanical strength of the composite bulk member 20B while suppressing a deterioration in the performance of the capacitor 1B.
  • the area occupation ratio S23 is higher than the area occupation ratio S13 " can be rephrased as "the number density of the conductive fibers 21 existing in the outer peripheral region R2 is higher than the number density of the conductive fibers 21 existing in the central region R1".
  • the area occupancy ratio S23 is high means that the difference between the area occupancy ratios S13 and S23 is 5% or more. That is, S23 / S13 ⁇ 1.05. S23 / S13 may be 1.2 or more, 2 or more, or 5 or more.
  • the area occupation ratio S13 is the total area occupation ratio of the conductive fibers 21 and the dielectric layer 22 in any part of the central region R1 in any one XY cross section.
  • the area occupation ratio S23 is the total area occupation ratio of the conductive fibers 21 and the dielectric layer 22 in any part of the peripheral region R2 in the same XY cross section as above. Even if the area occupation ratio S23 in a part of the peripheral region R2 is lower than the area occupation ratio S13 , it is sufficient that the area occupation ratio S23 in the other part of the peripheral region R2 in the XY cross section is higher than the area occupation ratio S13 .
  • the area occupation ratio S23 may be higher than the area occupation ratio S13 .
  • both sides of the outer peripheral region R2 that face each other across the central region R1 may include a portion in which the area occupancy ratio S23 is higher than the area occupancy ratio S13 . This further improves the mechanical strength of the composite bulk member 20B.
  • the outer circumferential region R2 may include a portion where the area occupation ratio S23 is higher than the area occupation ratio S13 .
  • the mechanical strength of the composite bulk member 20B is further improved.
  • “Including a high portion... in a plurality of XY cross sections” means that the outer circumferential region R2 in at least two different XY cross sections includes a portion where the area occupation ratio S23 is higher than the area occupation ratio S13 . It is not necessary that the outer circumferential region R2 includes a portion where the area occupation ratio S23 is higher than the area occupation ratio S13 in all XY cross sections.
  • two outer circumferential regions R2 opposing each other with the central region R1 interposed therebetween may include a portion in which the area occupation ratio S23 is higher than the area occupation ratio S13 .
  • the area occupation ratio S 13 may be 0.08 or more, 0.10 or more, or 0.15 or more.
  • the area occupation ratio S 13 may be 0.50 or less, 0.40 or less, or 0.30 or less.
  • the area occupation ratio S23 may be 0.15 or more, 0.20 or more, or 0.25 or more.
  • the area occupation ratio S23 may be 0.70 or less, 0.50 or less, or 0.40 or less.
  • the maximum height Hmax is determined in the same manner as in the first embodiment from an SEM image of the XZ cross section obtained in the same manner as in the first embodiment.
  • the central region R1 and the peripheral region R2 are determined by the same method as that for determining the central region R1 and the peripheral region R2 performed to calculate the average number densities N1 and N2 in the first embodiment, using the sample used to determine the maximum height Hmax.
  • this method refer to Fig. 3. In the above sample, the XZ cross section and half of the XY cross section of the capacitor 1B are exposed.
  • the opposing outer peripheral regions R2 can be determined from the XY cross section of the sample used to determine the maximum height Hmax .
  • this XY cross section a part (which may be less than half) of the XY cross section of the composite bulk member 20B is shown, but it is acceptable to assume that the remaining part of the XY cross section has a similar configuration to the obtained part of the XY cross section.
  • the XY cross section is shown in FIG. 3.
  • FIG. 3 and FIG. 6 correspond to each other, and FIG. 6 is an example in which the remaining part of the XY cross section of the composite bulk member 20B removed by cutting in FIG. 3 is supplemented.
  • the opposing outer peripheral regions R2 may be determined using FIG. 6.
  • FIG. 6 shows straight lines L5 and L6 that are part of the outer edge of the composite bulk member 20B, and straight lines L7 and L8 that are part of the boundary between the outer peripheral region R2 and the central region R1.
  • FIG. 6 shows straight lines L9 and L10 that are the remaining part of the outer edge of the composite bulk member 20B, and straight lines L11 and L12 that are part of the boundary between the outer peripheral region R2 and the central region R1.
  • the straight lines L5 and L6 include the left and right ends of the composite bulk member 20B, respectively, and correspond to straight lines along the Y direction.
  • the straight lines L9 and L10 include the Y direction ends of the composite bulk member 20B, respectively, and correspond to straight lines along the X direction.
  • the straight lines L7 and L8 include the left and right ends of the central region R1, respectively, and correspond to straight lines along the Y direction.
  • lines L11 and L12 each include the Y-direction end of central region R1 and correspond to lines along the X-direction.
  • the opposing outer peripheral regions R2 can be determined to be a combination of "the portion between lines L5 and L7 of outer peripheral region R2" and “the portion between lines L8 and L10 of outer peripheral region R2", and a combination of "the portion between lines L9 and L11 of outer peripheral region R2" and “the portion between lines L10 and L12 of outer peripheral region R2".
  • the composite bulk member 20B is divided into the conductive fibers 21, the dielectric layer 22, the conductor layer 23, and the filled resin (space 24) by image processing.
  • the total area of the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 in the peripheral region R2 is divided by the area of the peripheral region R2 (i.e., the total area including the conductive fibers 21, the dielectric layer 22, the conductor layer 23, and the filled resin). This allows the area occupancy ratio S23 of the peripheral region R2 to be calculated. Similarly, the area occupancy ratio S13 of the central region R1 is calculated.
  • the area occupancy ratios S13 and S23 in the multiple XY cross sections are calculated in the same manner as above, except that the cutting position is changed sequentially to the second position, the third position, and so on.
  • the multiple XY cross sections are obtained from the same sample (capacitor 1B).
  • the first position is set to a position as high as possible, with the height from the surface 10a of the substrate 10 being 20% or less of the height Hmax .
  • the second position is set to a position slightly lower than the first position
  • the third position is set to a position even lower than the second position. In this manner, multiple different XY cross sections can be exposed from the same sample.
  • the third modification is different from the third embodiment in the outer shape of the composite bulk member. This different configuration is similar to the difference between the first embodiment and the first modification.
  • the other configurations are similar to the first embodiment, and the same reference numerals as the first embodiment are used, and the description thereof will be omitted.
  • FIG. 8 is a schematic cross-sectional view of a portion of a capacitor in Modification 3 of Embodiment 3.
  • FIG. 8 shows a cross-section along the in-plane direction of the substrate 10.
  • An example of a cross-section of the entire capacitor in Modification 3 along the in-plane direction of the substrate 10 is shown in FIG. 6.
  • FIG. 8 corresponds to FIG. 7 and is an enlarged view of portion D in FIG. 6.
  • An example of a cross-section of the capacitor in Modification 3 along the thickness direction of the substrate 10 is shown in FIGS. 4 and 5.
  • FIG. 8 corresponds to the II-II cross-section of FIG. 5.
  • the conductive fibers 21 are inclined with respect to the Z direction or bent in the X direction in the peripheral region R2 of the XZ cross section. Therefore, the space 24 that existed in the peripheral region R2 is covered by the conductive fibers 21 and reduced in size.
  • the peripheral region R2 includes a portion where the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 is higher than the total area occupied by the conductive fibers 21, the dielectric layer 22, and the conductor layer 23 in the central region R1 .
  • the conductive fibers 21 are directly bonded to the substrate 10, but this is not limiting.
  • the conductive fibers 21 may be bonded to the substrate 10 via a conductive adhesive layer.
  • the conductive fibers 21 may be bonded to the surface of the adhesive layer, and the ends of the conductive fibers 21 may be inserted into the adhesive layer to be bonded to the adhesive layer.
  • the conductive adhesive layer is typically formed from a metal material.
  • the conductive fibers 21 in the peripheral region R2 are in contact with each other via the dielectric layer 22 or without the dielectric layer 22, but this is not limited to the above.
  • the multiple conductive fibers 21 in the peripheral region R2 may be isolated from each other.
  • the outer shapes of the substrate 10 and the composite bulk members 20, 20B are rectangular, but are not limited to this.
  • the outer shapes of the substrate 10 and the composite bulk members 20, 20B in the XY cross section may be circular, elliptical, or any polygon other than a rectangle.
  • the conductive fibers 21 and/or the composite bulk members 20 and 20A may be present on the surface (side) connecting the front surface 10a and the back surface 10b on the substrate 10.
  • carbon nanotubes are used as the conductive fibers 21 in step (b) or (a'), but this is not limiting.
  • the conductive fibers 21 may be other than CNTs.
  • a forest is provided on the substrate 10 in step (b) or (a'), but this is not limiting.
  • the forest may be provided on another synthetic substrate and then transferred to the substrate 10.
  • steps (c) or (b') and subsequent steps may be performed after the transfer.
  • An adhesive layer may be provided on the substrate 10.
  • a portion of the conductive fiber 21 is tilted by aggregation, but this is not limited to the above.
  • a portion of the conductive fiber 21 may also be tilted by pressing the forest from the outside toward the center.
  • the dielectric layer 22 is formed by a sol-gel method in step (c), but this is not limiting.
  • the dielectric layer 22 may be formed by a vapor phase film formation method (typically, a sputtering method). In this case, the solvent used in step (b) or (a') is removed before carrying out step (c).
  • the dielectric layer 22 may be formed by a liquid phase film formation method (typically, a plating method) other than the sol-gel method.
  • a method that combines plating and surface oxidation treatment may be used.
  • Figure 9 shows an image of a portion of the substrate 10 with the forest 200. From Figure 9, it was confirmed that the CNTs at the edge of the forest 200 are inclined toward the center. For convenience, Figure 9 includes dashed lines indicating the outer edges of the forest 200 and the substrate 10.
  • dielectric layer 22 was formed on the forest 200.
  • the VACNTs on the substrate 10 were immersed in a raw material mixture of 3-aminopropyltriethoxysilane and ethanol, and the mixture was maintained at 25° C. for 1.5 hours while stirring at 300 rpm, and then the substrate 10 was removed. Finally, the mixture was dried to form a dielectric layer 22 (SiO 2 ) covering the surfaces of the multiple CNTs (conductive fibers 21) on the substrate 10.
  • the substrate 10 was immersed in a dispersion containing PEDOT (polyethylenedioxythiophene) and PSS (polystyrene sulfonic acid) to form a conductive layer 23 (a PEDOT/PSS composite) on the dielectric layer 22. In this manner, a capacitor was obtained.
  • PEDOT polyethylenedioxythiophene
  • PSS polystyrene sulfonic acid
  • the center C of the substrate 10 was determined by viewing the substrate 10 from the Z direction. Next, the XZ cross section including the center C was exposed by polishing. The obtained cross section was observed by SEM. From the SEM image, the maximum height H max of the CNT was calculated to be 105 ⁇ m. It can be understood that the average length of the fibrous conductive member is 50 ⁇ m or more.
  • the outer peripheral region R2 In the same SEM image, the area from the outer edge of the composite bulk member to about 200 ⁇ m is defined as the outer peripheral region R2, and the remaining area is defined as the central region R1.
  • the area occupancy ratios S 11 , S 21 and the area occupancy ratios S 12 , S 22 in the cross section in the thickness direction were calculated as described above. In at least one cross section in the thickness direction, the area occupancy ratio S 22 satisfied the relationship of S 22 /S 12 ⁇ 1.36.
  • the outer peripheral regions R2 on both sides include a portion where the area occupancy ratio S 22 is higher than the area occupancy ratio S 12 of the central region R1.
  • the outer peripheral regions R2 on both sides include a portion where the area occupancy ratio S 21 is higher than the area occupancy ratio S 11 of the central region R1.
  • the area occupancy ratios S13 and S23 of the CNTs in the XY cross section were calculated as described above.
  • the area occupancy ratio S23 satisfied the relationship S23 / S13 ⁇ 1.53.
  • the peripheral region R2 includes a portion in which the area occupancy ratio S23 is higher than the area occupancy ratio S13 of the central region R1.
  • the average number density N2 of the conductive fibers 21 in the peripheral region R2, calculated from the cross section in the in-plane direction, was 5.28 x 109 fibers/ cm2 , and the average number density N1 of the conductive fibers 21 in the central region R1 was 2.36 x 109 fibers/ cm2 (ratio N2 / N1 2.24).
  • the maximum cross-sectional dimension of the CNT was 33 nm.
  • the thickness of the dielectric layer 22 was 51 nm.
  • the thickness of the conductor layer 23 was 15 nm.
  • FIG. 10A is an SEM image of a portion of the outer peripheral region of the polished XZ cross section of the composite bulk member obtained in Manufacturing Example 1.
  • FIG. 10B is an SEM image of a portion of the central region of the polished XZ cross section of the composite bulk member obtained in Manufacturing Example 1.
  • the linear whitish parts are the conductive fibers 21 covered with the dielectric layer 22 and the conductive layer 23, and the black parts are the filled resin corresponding to the space 24.
  • FIG. 11A is an SEM image of a portion of the outer peripheral region of the polished XY cross section of the composite bulk member obtained in Manufacturing Example 1.
  • FIG. 11B is an SEM image of a portion of the central region of the polished XY cross section of the composite bulk member obtained in Manufacturing Example 1.
  • the circular whitish areas are the conductive fibers 21 covered with the dielectric layer 22 and the conductor layer 23, and the black areas are the filled resin corresponding to the space 24.
  • the capacitors disclosed herein may be used in any suitable application, and may be particularly well suited for applications requiring high mechanical strength in the composite bulk member.
  • the fibrous conductive member has a maximum height H max
  • the composite bulk member has one and other outer peripheral regions occupying an area from the outer edge of the composite bulk member to twice the maximum height Hmax , and a central region sandwiched between the one and other outer peripheral regions,
  • a capacitor wherein at least one of the peripheral regions on one side and the other side includes a portion in which the total area occupation ratio S21 of the fibrous conductive member and the dielectric layer is higher than the total area occupation ratio S11 of the fibrous
  • ⁇ 2> In one cross section along the thickness direction of the substrate, The capacitor according to ⁇ 1>, wherein the peripheral regions on both sides include a portion in which the area occupation ratio S21 is higher than the area occupation ratio S11 .
  • ⁇ 3> In each of a plurality of cross sections along a thickness direction of the substrate, The capacitor according to ⁇ 1> or ⁇ 2>, wherein at least one of the outer peripheral regions on one side and the other side includes a portion in which the area occupation ratio S21 is higher than the area occupation ratio S11 .
  • the fibrous conductive member has a maximum height H max
  • the composite bulk member has one and other outer peripheral regions occupying an area from the outer edge of the composite bulk member to twice the maximum height Hmax , and a central region sandwiched between the one and other outer peripheral regions,
  • a capacitor wherein at least one of the peripheral regions on one side and the other side includes a portion in which the total area occupation ratio S22 of the fibrous conductive member, the dielectric layer and the conductor layer is higher than the total area occupation ratio S12
  • ⁇ 5> In one cross section along the thickness direction of the substrate, The capacitor according to ⁇ 4>, wherein both of the outer circumferential regions on one side and the other side include a portion where the area occupation ratio S22 is higher than the area occupation ratio S12 .
  • ⁇ 6> In each of a plurality of cross sections along a thickness direction of the substrate, The capacitor according to ⁇ 4> or ⁇ 5>, wherein at least one of the outer peripheral regions on one side and the other side includes a portion where the area occupation ratio S22 is higher than the area occupation ratio S12 .
  • the fibrous conductive member has a maximum height H max
  • the composite bulk member has an outer peripheral region that occupies an area from an outer edge of the composite bulk member to twice the maximum height Hmax , and a central region that is surrounded by the outer peripheral region, A capacitor, wherein the peripheral region includes a portion in which a total area occupation ratio S23 of the fibrous conductive member, the dielectric layer and the conductor layer is higher than a total area occupation
  • each of the portions of the outer circumferential region on one side and the other side opposing each other via the central region includes a portion in which the area occupation ratio S23 is higher than the area occupation ratio S13 .
  • the peripheral region includes a portion where the area occupation ratio S23 is higher than the area occupation ratio S13 .
  • ⁇ 11> The capacitor according to any one of ⁇ 1> to ⁇ 10>, wherein the average number density N2 of the plurality of fibrous conductive members in the outer circumferential region is 10 8 fibers/cm 2 or more.
  • ⁇ 12> The capacitor according to any one of ⁇ 1> to ⁇ 11>, wherein the average length of the plurality of fibrous conductive members is 50 ⁇ m or more.
  • ⁇ 13> A capacitor according to any one of ⁇ 1> to ⁇ 12>, wherein the ratio N2 / N1 of the average number density N2 of the plurality of fibrous conductive members in the outer peripheral region to the average number density N1 of the plurality of fibrous conductive members in the central region is 2 or more.
  • ⁇ 14> The capacitor according to any one of ⁇ 1> to ⁇ 13>, wherein the fibrous conductive member is a carbon nanotube.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2023/026071 2022-11-01 2023-07-14 キャパシタ Ceased WO2024095537A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202380073651.0A CN120019725A (zh) 2022-11-01 2023-07-14 电容器
JP2023577919A JP7626257B2 (ja) 2022-11-01 2023-07-14 キャパシタ
US19/068,170 US20250201493A1 (en) 2022-11-01 2025-03-03 Capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022175701 2022-11-01
JP2022-175701 2022-11-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/068,170 Continuation US20250201493A1 (en) 2022-11-01 2025-03-03 Capacitor

Publications (1)

Publication Number Publication Date
WO2024095537A1 true WO2024095537A1 (ja) 2024-05-10

Family

ID=90930181

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/026071 Ceased WO2024095537A1 (ja) 2022-11-01 2023-07-14 キャパシタ

Country Status (4)

Country Link
US (1) US20250201493A1 (https=)
JP (1) JP7626257B2 (https=)
CN (1) CN120019725A (https=)
WO (1) WO2024095537A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219788A1 (en) * 2004-03-18 2005-10-06 Nanosys, Inc. Nanofiber surface based capacitors
WO2019058922A1 (ja) * 2017-09-19 2019-03-28 株式会社村田製作所 キャパシタ
US20210074477A1 (en) * 2018-05-18 2021-03-11 Murata Manufacturing Co., Ltd. Integrated energy storage component
WO2021059570A1 (ja) * 2019-09-25 2021-04-01 株式会社村田製作所 ナノ構造集合体およびその製造方法
WO2021229871A1 (ja) * 2020-05-12 2021-11-18 株式会社村田製作所 構造体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219788A1 (en) * 2004-03-18 2005-10-06 Nanosys, Inc. Nanofiber surface based capacitors
WO2019058922A1 (ja) * 2017-09-19 2019-03-28 株式会社村田製作所 キャパシタ
US20210074477A1 (en) * 2018-05-18 2021-03-11 Murata Manufacturing Co., Ltd. Integrated energy storage component
WO2021059570A1 (ja) * 2019-09-25 2021-04-01 株式会社村田製作所 ナノ構造集合体およびその製造方法
WO2021229871A1 (ja) * 2020-05-12 2021-11-18 株式会社村田製作所 構造体

Also Published As

Publication number Publication date
JPWO2024095537A1 (https=) 2024-05-10
CN120019725A (zh) 2025-05-16
JP7626257B2 (ja) 2025-02-04
US20250201493A1 (en) 2025-06-19

Similar Documents

Publication Publication Date Title
JP5743353B2 (ja) 電荷蓄積デバイス、電荷蓄積デバイスを製造する方法、移動型電子デバイスおよびマイクロ電子デバイス
KR102290618B1 (ko) 나노와이어 클러스터 형성 방법
US7466533B2 (en) Nanofiber surface based capacitors
US7081383B2 (en) Method for fabricating memory cells and memory cell array
Yuan et al. Dielectric constant of polymer composites and the routes to high-k or low-k nanocomposite materials
US20210166879A1 (en) Multilayer ceramic electronic component
CN106463618A (zh) 电容器及其制造方法
KR20140138701A (ko) 세장형 몸체들을 갖는 전도성 엘리먼트들의 어레이를 포함하는 마이크로스케일 및 나노스케일 커패시터들
US11749463B2 (en) Capacitor and method for manufacturing the same
US12362104B2 (en) Capacitor
EP1976351A2 (en) Wiring structure and method of forming the same
JP7626257B2 (ja) キャパシタ
JP7652330B2 (ja) キャパシタ
WO2021079566A1 (ja) 複合キャパシタ
US20230005663A1 (en) Structural body
JP7652339B2 (ja) キャパシタおよびキャパシタの製造方法
CN115472433A (zh) 具有明确限定的绝缘区域的高密度电容性器件
JP2024051956A (ja) キャパシタ
US20230253155A1 (en) Capacitor
CN109585179B (zh) 气凝胶电容器及制造该气凝胶电容器的方法
JP2022046919A (ja) 半導体デバイス
JP2017130669A (ja) エネルギー貯蔵デバイスのエネルギー密度及び達成可能な電力出力を増やす方法
CN102782784B (zh) 来自低维度金属体系的复合材料的高电介质电容率材料
TWI505534B (zh) 蓄電裝置、其製造方法、為其製造導電結構之方法、使用其之行動電子裝置、與含其之微電子裝置
CN117461105A (zh) 改进的超级电容器及其制造方法

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2023577919

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23885310

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 202380073651.0

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 202380073651.0

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23885310

Country of ref document: EP

Kind code of ref document: A1