JP7625133B2 - 異常検出装置及び異常検出方法 - Google Patents

異常検出装置及び異常検出方法 Download PDF

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JP7625133B2
JP7625133B2 JP2024503336A JP2024503336A JP7625133B2 JP 7625133 B2 JP7625133 B2 JP 7625133B2 JP 2024503336 A JP2024503336 A JP 2024503336A JP 2024503336 A JP2024503336 A JP 2024503336A JP 7625133 B2 JP7625133 B2 JP 7625133B2
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processing
anomaly detection
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anomaly
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JPWO2024176347A1 (https=
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靖英 森
パラシャント クマール シャルマ
真生 濱本
健史 大森
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N5/00—Computing arrangements using knowledge-based models
    • G06N5/02—Knowledge representation; Symbolic representation
    • G06N5/022—Knowledge engineering; Knowledge acquisition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Automation & Control Theory (AREA)
  • Computational Linguistics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Medical Informatics (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
JP2024503336A 2023-02-21 2023-02-21 異常検出装置及び異常検出方法 Active JP7625133B2 (ja)

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PCT/JP2023/006212 WO2024176347A1 (ja) 2023-02-21 2023-02-21 異常検出装置及び異常検出方法

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JPWO2024176347A1 JPWO2024176347A1 (https=) 2024-08-29
JP7625133B2 true JP7625133B2 (ja) 2025-01-31

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US (1) US20250364334A1 (https=)
JP (1) JP7625133B2 (https=)
KR (1) KR20240131986A (https=)
CN (1) CN118830054A (https=)
TW (1) TWI895961B (https=)
WO (1) WO2024176347A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051269A (ja) 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置
JP2009054843A (ja) 2007-08-28 2009-03-12 Omron Corp プロセス異常検出装置および方法並びにプログラム
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP2021002295A (ja) 2019-06-24 2021-01-07 東京エレクトロンデバイス株式会社 異常検知装置、異常検知システム、及び異常検知方法
JP2021086571A (ja) 2019-11-29 2021-06-03 東京エレクトロン株式会社 異常検知装置、異常検知方法及び異常検知プログラム
JP2023010604A (ja) 2021-07-08 2023-01-20 株式会社日立ハイテク プロセスレシピ探索装置、エッチングレシピ探索方法及び半導体装置製造システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5363213B2 (ja) * 2009-06-30 2013-12-11 東京エレクトロン株式会社 異常検出システム、異常検出方法、記憶媒体及び基板処理装置
US8406912B2 (en) * 2010-06-25 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for data mining and feature tracking for fab-wide prediction and control
JP6824121B2 (ja) * 2017-07-14 2021-02-03 株式会社東芝 状態検知装置、状態検知方法及びプログラム
JP6778666B2 (ja) 2017-08-24 2020-11-04 株式会社日立製作所 探索装置及び探索方法
JPWO2021255784A1 (https=) * 2020-06-15 2021-12-23
CN114819242B (zh) * 2021-01-28 2025-05-09 联华电子股份有限公司 考虑整体特征与局部特征的半导体工艺预测方法与装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051269A (ja) 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置
JP2009054843A (ja) 2007-08-28 2009-03-12 Omron Corp プロセス異常検出装置および方法並びにプログラム
JP2020181959A (ja) 2019-04-26 2020-11-05 東京エレクトロン株式会社 学習方法、管理装置および管理プログラム
JP2021002295A (ja) 2019-06-24 2021-01-07 東京エレクトロンデバイス株式会社 異常検知装置、異常検知システム、及び異常検知方法
JP2021086571A (ja) 2019-11-29 2021-06-03 東京エレクトロン株式会社 異常検知装置、異常検知方法及び異常検知プログラム
JP2023010604A (ja) 2021-07-08 2023-01-20 株式会社日立ハイテク プロセスレシピ探索装置、エッチングレシピ探索方法及び半導体装置製造システム

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KR20240131986A (ko) 2024-09-02
CN118830054A (zh) 2024-10-22
US20250364334A1 (en) 2025-11-27
TWI895961B (zh) 2025-09-01
WO2024176347A1 (ja) 2024-08-29
JPWO2024176347A1 (https=) 2024-08-29
TW202435111A (zh) 2024-09-01

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