JP7595756B2 - 半導体測定の品質を決定するための方法およびシステム - Google Patents

半導体測定の品質を決定するための方法およびシステム Download PDF

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JP7595756B2
JP7595756B2 JP2023519029A JP2023519029A JP7595756B2 JP 7595756 B2 JP7595756 B2 JP 7595756B2 JP 2023519029 A JP2023519029 A JP 2023519029A JP 2023519029 A JP2023519029 A JP 2023519029A JP 7595756 B2 JP7595756 B2 JP 7595756B2
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values
measurement
features
model
value
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JP2023544534A5 (https=
JP2023544534A (ja
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ドミトリー サンコ
ミン-ヨン ムーン
スティリアン パンデフ
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KLA Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045Correction of measurements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/02Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G01B15/04Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/27Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
    • G01N21/274Calibration, base line adjustment, drift correction
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • G03F7/706837Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Data Mining & Analysis (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2023519029A 2020-09-24 2021-09-01 半導体測定の品質を決定するための方法およびシステム Active JP7595756B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/030,690 2020-09-24
US17/030,690 US11530913B2 (en) 2020-09-24 2020-09-24 Methods and systems for determining quality of semiconductor measurements
PCT/US2021/048591 WO2022066378A1 (en) 2020-09-24 2021-09-01 Methods and systems for determining quality of semiconductor measurements

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JP2023544534A JP2023544534A (ja) 2023-10-24
JP2023544534A5 JP2023544534A5 (https=) 2024-06-21
JP7595756B2 true JP7595756B2 (ja) 2024-12-06

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US (1) US11530913B2 (https=)
EP (1) EP4200598A4 (https=)
JP (1) JP7595756B2 (https=)
KR (1) KR102721341B1 (https=)
CN (1) CN116018512B (https=)
TW (1) TWI884290B (https=)
WO (1) WO2022066378A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11868119B2 (en) * 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
US12535438B2 (en) 2022-07-19 2026-01-27 Bruker Technologies Ltd. Analysis of x-ray scatterometry data using deep learning
US12510590B2 (en) * 2023-06-30 2025-12-30 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing an effective medium model with physical modeling
CN116973819B (zh) * 2023-09-22 2023-12-12 上海优立检测技术股份有限公司 一种微波电磁参数三维测试方法、系统及储存介质
US20250198942A1 (en) * 2023-12-15 2025-06-19 Kla Corporation Measurements Of Complex Semiconductor Structures Based On Component Measurement Signals
TWI872895B (zh) * 2024-01-02 2025-02-11 財團法人工業技術研究院 衝壓製程品質評估方法
DE102024108828A1 (de) * 2024-03-27 2025-10-02 AUDI HUNGARIA Zrt. Verfahren und Vorrichtung zur Überprüfung einer Oberfläche eines Bauteils
WO2025245546A1 (en) * 2024-05-19 2025-11-27 Kla Corporation Physics augmented regression algorithm for critical dimensions in large pitch targets

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012092132A2 (en) 2010-12-29 2012-07-05 Cognex Corporation Determining the uniqueness of a model for machine vision
JP2014512101A (ja) 2011-04-06 2014-05-19 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
US20150033201A1 (en) 2013-07-29 2015-01-29 GlobalFoundries, Inc. Systems and methods for fabricating semiconductor device structures
US20160154319A1 (en) 2013-08-13 2016-06-02 Asml Netherlands B.V. Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure
WO2017073737A1 (ja) 2015-10-28 2017-05-04 国立大学法人東京大学 分析装置
JP2019525450A (ja) 2016-06-01 2019-09-05 ケーエルエー コーポレイション ニューラルネットワークと順物理モデルを半導体用途に組み込んだシステムおよび方法

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
JP4222927B2 (ja) 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー.ブイ. 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7842933B2 (en) 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
US6937337B2 (en) 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7321426B1 (en) 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
WO2007066787A1 (ja) * 2005-12-05 2007-06-14 National University Corporation Nagoya University ハイブリッドgaによる複数パラメータの最適化方法、パターンマッチングによるデータ解析方法、放射線回折データに基づく物質構造の推定方法、ならびに関連するプログラム、記録媒体および各種装置
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
JP4887062B2 (ja) 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
US7873585B2 (en) 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8068662B2 (en) 2009-03-30 2011-11-29 Hermes Microvision, Inc. Method and system for determining a defect during charged particle beam inspection of a sample
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニFei Company Sem画像化法
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US10107621B2 (en) 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US10801975B2 (en) 2012-05-08 2020-10-13 Kla-Tencor Corporation Metrology tool with combined X-ray and optical scatterometers
US10013518B2 (en) 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
US9129715B2 (en) 2012-09-05 2015-09-08 SVXR, Inc. High speed x-ray inspection microscope
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9826614B1 (en) 2013-03-15 2017-11-21 Kla-Tencor Corporation Compac X-ray source for semiconductor metrology
EP2978377B1 (en) * 2013-03-26 2021-05-05 Institute of Experimental and Applied Physics Method of phase gradient radiography and arrangement of an imaging system for application of the method
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9255877B2 (en) * 2013-05-21 2016-02-09 Kla-Tencor Corporation Metrology system optimization for parameter tracking
US9915522B1 (en) 2013-06-03 2018-03-13 Kla-Tencor Corporation Optimized spatial modeling for optical CD metrology
US10502694B2 (en) 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
WO2015167753A2 (en) 2014-04-03 2015-11-05 Massachusetts Institute Of Technology Compact x-ray source for cd-saxs
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
US10352876B2 (en) * 2014-05-09 2019-07-16 KLA—Tencor Corporation Signal response metrology for scatterometry based overlay measurements
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
US10139352B2 (en) * 2014-10-18 2018-11-27 Kla-Tenor Corporation Measurement of small box size targets
US10152678B2 (en) 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US10324050B2 (en) 2015-01-14 2019-06-18 Kla-Tencor Corporation Measurement system optimization for X-ray based metrology
US10365225B1 (en) * 2015-03-04 2019-07-30 Kla-Tencor Corporation Multi-location metrology
US10502549B2 (en) * 2015-03-24 2019-12-10 Kla-Tencor Corporation Model-based single parameter measurement
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
US10504759B2 (en) * 2016-04-04 2019-12-10 Kla-Tencor Corporation Semiconductor metrology with information from multiple processing steps
WO2018071716A1 (en) * 2016-10-13 2018-04-19 Kla-Tencor Corporation Metrology systems and methods for process control
US10775323B2 (en) 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10481111B2 (en) 2016-10-21 2019-11-19 Kla-Tencor Corporation Calibration of a small angle X-ray scatterometry based metrology system
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
US11073487B2 (en) 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10732515B2 (en) * 2017-09-27 2020-08-04 Kla-Tencor Corporation Detection and measurement of dimensions of asymmetric structures
JP2020535484A (ja) * 2017-09-28 2020-12-03 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法
US11517197B2 (en) * 2017-10-06 2022-12-06 Canon Medical Systems Corporation Apparatus and method for medical image reconstruction using deep learning for computed tomography (CT) image noise and artifacts reduction
US11519869B2 (en) 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
WO2019185233A1 (en) 2018-03-29 2019-10-03 Asml Netherlands B.V. Method for evaluating control strategies in a semicondcutor manufacturing process
TWI749355B (zh) * 2018-08-17 2021-12-11 荷蘭商Asml荷蘭公司 用於校正圖案化程序之度量衡資料之方法及相關的電腦程式產品
EP3637186A1 (en) * 2018-10-09 2020-04-15 ASML Netherlands B.V. Method of calibrating a plurality of metrology apparatuses, method of determining a parameter of interest, and metrology apparatus
US12044980B2 (en) * 2018-12-03 2024-07-23 Asml Netherlands B.V. Method of manufacturing devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012092132A2 (en) 2010-12-29 2012-07-05 Cognex Corporation Determining the uniqueness of a model for machine vision
JP2014512101A (ja) 2011-04-06 2014-05-19 ケーエルエー−テンカー コーポレイション 向上したプロセス制御のための品質測定値を提供するための方法およびシステム
US20150033201A1 (en) 2013-07-29 2015-01-29 GlobalFoundries, Inc. Systems and methods for fabricating semiconductor device structures
US20160154319A1 (en) 2013-08-13 2016-06-02 Asml Netherlands B.V. Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure
WO2017073737A1 (ja) 2015-10-28 2017-05-04 国立大学法人東京大学 分析装置
JP2019525450A (ja) 2016-06-01 2019-09-05 ケーエルエー コーポレイション ニューラルネットワークと順物理モデルを半導体用途に組み込んだシステムおよび方法

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KR20230073225A (ko) 2023-05-25
CN116018512A (zh) 2023-04-25
EP4200598A1 (en) 2023-06-28
EP4200598A4 (en) 2025-06-18
US11530913B2 (en) 2022-12-20
JP2023544534A (ja) 2023-10-24
CN116018512B (zh) 2024-09-17
US20220090912A1 (en) 2022-03-24
WO2022066378A1 (en) 2022-03-31
TWI884290B (zh) 2025-05-21
TW202213567A (zh) 2022-04-01
KR102721341B1 (ko) 2024-10-23

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