JP2023544534A5 - - Google Patents

Info

Publication number
JP2023544534A5
JP2023544534A5 JP2023519029A JP2023519029A JP2023544534A5 JP 2023544534 A5 JP2023544534 A5 JP 2023544534A5 JP 2023519029 A JP2023519029 A JP 2023519029A JP 2023519029 A JP2023519029 A JP 2023519029A JP 2023544534 A5 JP2023544534 A5 JP 2023544534A5
Authority
JP
Japan
Prior art keywords
features
values
value
measurement site
reconstructed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023519029A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023544534A (ja
JP7595756B2 (ja
Filing date
Publication date
Priority claimed from US17/030,690 external-priority patent/US11530913B2/en
Application filed filed Critical
Publication of JP2023544534A publication Critical patent/JP2023544534A/ja
Publication of JP2023544534A5 publication Critical patent/JP2023544534A5/ja
Application granted granted Critical
Publication of JP7595756B2 publication Critical patent/JP7595756B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023519029A 2020-09-24 2021-09-01 半導体測定の品質を決定するための方法およびシステム Active JP7595756B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/030,690 2020-09-24
US17/030,690 US11530913B2 (en) 2020-09-24 2020-09-24 Methods and systems for determining quality of semiconductor measurements
PCT/US2021/048591 WO2022066378A1 (en) 2020-09-24 2021-09-01 Methods and systems for determining quality of semiconductor measurements

Publications (3)

Publication Number Publication Date
JP2023544534A JP2023544534A (ja) 2023-10-24
JP2023544534A5 true JP2023544534A5 (https=) 2024-06-21
JP7595756B2 JP7595756B2 (ja) 2024-12-06

Family

ID=80740165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023519029A Active JP7595756B2 (ja) 2020-09-24 2021-09-01 半導体測定の品質を決定するための方法およびシステム

Country Status (7)

Country Link
US (1) US11530913B2 (https=)
EP (1) EP4200598A4 (https=)
JP (1) JP7595756B2 (https=)
KR (1) KR102721341B1 (https=)
CN (1) CN116018512B (https=)
TW (1) TWI884290B (https=)
WO (1) WO2022066378A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11868119B2 (en) * 2021-09-24 2024-01-09 Tokyo Electron Limited Method and process using fingerprint based semiconductor manufacturing process fault detection
US12535438B2 (en) 2022-07-19 2026-01-27 Bruker Technologies Ltd. Analysis of x-ray scatterometry data using deep learning
US12510590B2 (en) * 2023-06-30 2025-12-30 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing an effective medium model with physical modeling
CN116973819B (zh) * 2023-09-22 2023-12-12 上海优立检测技术股份有限公司 一种微波电磁参数三维测试方法、系统及储存介质
US20250198942A1 (en) * 2023-12-15 2025-06-19 Kla Corporation Measurements Of Complex Semiconductor Structures Based On Component Measurement Signals
TWI872895B (zh) * 2024-01-02 2025-02-11 財團法人工業技術研究院 衝壓製程品質評估方法
DE102024108828A1 (de) * 2024-03-27 2025-10-02 AUDI HUNGARIA Zrt. Verfahren und Vorrichtung zur Überprüfung einer Oberfläche eines Bauteils
WO2025245546A1 (en) * 2024-05-19 2025-11-27 Kla Corporation Physics augmented regression algorithm for critical dimensions in large pitch targets

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
JP4222927B2 (ja) 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー.ブイ. 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7842933B2 (en) 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
US6937337B2 (en) 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7321426B1 (en) 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
WO2007066787A1 (ja) * 2005-12-05 2007-06-14 National University Corporation Nagoya University ハイブリッドgaによる複数パラメータの最適化方法、パターンマッチングによるデータ解析方法、放射線回折データに基づく物質構造の推定方法、ならびに関連するプログラム、記録媒体および各種装置
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
JP4887062B2 (ja) 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
US7873585B2 (en) 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8068662B2 (en) 2009-03-30 2011-11-29 Hermes Microvision, Inc. Method and system for determining a defect during charged particle beam inspection of a sample
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニFei Company Sem画像化法
WO2012092132A2 (en) 2010-12-29 2012-07-05 Cognex Corporation Determining the uniqueness of a model for machine vision
EP3779598B1 (en) 2011-04-06 2022-12-21 Kla-Tencor Corporation Method for providing a set of process tool correctables
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US10107621B2 (en) 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US10801975B2 (en) 2012-05-08 2020-10-13 Kla-Tencor Corporation Metrology tool with combined X-ray and optical scatterometers
US10013518B2 (en) 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
US9129715B2 (en) 2012-09-05 2015-09-08 SVXR, Inc. High speed x-ray inspection microscope
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9826614B1 (en) 2013-03-15 2017-11-21 Kla-Tencor Corporation Compac X-ray source for semiconductor metrology
EP2978377B1 (en) * 2013-03-26 2021-05-05 Institute of Experimental and Applied Physics Method of phase gradient radiography and arrangement of an imaging system for application of the method
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9255877B2 (en) * 2013-05-21 2016-02-09 Kla-Tencor Corporation Metrology system optimization for parameter tracking
US9915522B1 (en) 2013-06-03 2018-03-13 Kla-Tencor Corporation Optimized spatial modeling for optical CD metrology
US9177873B2 (en) 2013-07-29 2015-11-03 GlobalFoundries, Inc. Systems and methods for fabricating semiconductor device structures
US10502694B2 (en) 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
US9760018B2 (en) 2013-08-13 2017-09-12 Asml Netherlands B.V. Method and inspection apparatus and computer program product for assessing a quality of reconstruction of a value of a parameter of interest of a structure
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
WO2015167753A2 (en) 2014-04-03 2015-11-05 Massachusetts Institute Of Technology Compact x-ray source for cd-saxs
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
US10352876B2 (en) * 2014-05-09 2019-07-16 KLA—Tencor Corporation Signal response metrology for scatterometry based overlay measurements
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
US10139352B2 (en) * 2014-10-18 2018-11-27 Kla-Tenor Corporation Measurement of small box size targets
US10152678B2 (en) 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US10324050B2 (en) 2015-01-14 2019-06-18 Kla-Tencor Corporation Measurement system optimization for X-ray based metrology
US10365225B1 (en) * 2015-03-04 2019-07-30 Kla-Tencor Corporation Multi-location metrology
US10502549B2 (en) * 2015-03-24 2019-12-10 Kla-Tencor Corporation Model-based single parameter measurement
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
JP6959614B2 (ja) * 2015-10-28 2021-11-02 国立大学法人 東京大学 分析装置,及びフローサイトメータ
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
US10504759B2 (en) * 2016-04-04 2019-12-10 Kla-Tencor Corporation Semiconductor metrology with information from multiple processing steps
US10346740B2 (en) * 2016-06-01 2019-07-09 Kla-Tencor Corp. Systems and methods incorporating a neural network and a forward physical model for semiconductor applications
WO2018071716A1 (en) * 2016-10-13 2018-04-19 Kla-Tencor Corporation Metrology systems and methods for process control
US10775323B2 (en) 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10481111B2 (en) 2016-10-21 2019-11-19 Kla-Tencor Corporation Calibration of a small angle X-ray scatterometry based metrology system
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
US11073487B2 (en) 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US10732515B2 (en) * 2017-09-27 2020-08-04 Kla-Tencor Corporation Detection and measurement of dimensions of asymmetric structures
JP2020535484A (ja) * 2017-09-28 2020-12-03 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ方法
US11517197B2 (en) * 2017-10-06 2022-12-06 Canon Medical Systems Corporation Apparatus and method for medical image reconstruction using deep learning for computed tomography (CT) image noise and artifacts reduction
US11519869B2 (en) 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
WO2019185233A1 (en) 2018-03-29 2019-10-03 Asml Netherlands B.V. Method for evaluating control strategies in a semicondcutor manufacturing process
TWI749355B (zh) * 2018-08-17 2021-12-11 荷蘭商Asml荷蘭公司 用於校正圖案化程序之度量衡資料之方法及相關的電腦程式產品
EP3637186A1 (en) * 2018-10-09 2020-04-15 ASML Netherlands B.V. Method of calibrating a plurality of metrology apparatuses, method of determining a parameter of interest, and metrology apparatus
US12044980B2 (en) * 2018-12-03 2024-07-23 Asml Netherlands B.V. Method of manufacturing devices

Similar Documents

Publication Publication Date Title
JP2023544534A5 (https=)
Malone et al. Multifrequency electrical impedance tomography using spectral constraints
CN111448590B (zh) 基于深度学习的散射校正
Usamentiaga et al. More than fifty shades of grey: Quantitative characterization of defects and interpretation using SNR and CNR
Strangman et al. Scalp and skull influence on near infrared photon propagation in the Colin27 brain template
CN102144154B (zh) 用结构入射光测定混浊介质光学特征的方法与系统
US20200187893A1 (en) Beam hardening correction in x-ray dark-field imaging
CN101739681B (zh) 基于相关预测模型的磁共振图像中检测结构形变的方法
JP2011245277A5 (ja) 被検体情報取得装置及び信号処理方法
JP2010517015A (ja) スペクトル解析のための高度パターン認識システム
US8582846B2 (en) Method and system for validating image registration
JP2007195966A5 (https=)
CN114746896B (zh) 用于相位对比和暗场成像的运动伪影校正
WO2013073453A1 (en) Imaging apparatus and image processing method
JP2024510080A5 (https=)
CN111684261B (zh) 多角度动态光散射
CN105678734A (zh) 一种图像匹配系统的异源测试图像标定方法
Tang et al. Reliable wavefront reconstruction from a single lateral shearing interferogram using Bayesian convolutional neural network
Sedghi et al. Digital analysis of egg surface area and volume: Effects of longitudinal axis, maximum breadth and weight
Miéville et al. Effects of computing parameters and measurement locations on the estimation of 3D NPS in non-stationary MDCT images
Le et al. Wavelet deep learning network for objective retinal functional estimation from multimodal retinal imaging
CN120971359A (zh) 基于差分吸收光谱的呼吸炎症标志物检测系统
JP2025501839A5 (https=)
US20200380666A1 (en) Method for determining errors in parameters derived from digital object representations
WO2020121918A1 (ja) X線分析装置、x線分析システム、分析方法、及びプログラム