TWI884290B - 用於判定半導體量測之品質之方法及系統 - Google Patents
用於判定半導體量測之品質之方法及系統 Download PDFInfo
- Publication number
- TWI884290B TWI884290B TW110125604A TW110125604A TWI884290B TW I884290 B TWI884290 B TW I884290B TW 110125604 A TW110125604 A TW 110125604A TW 110125604 A TW110125604 A TW 110125604A TW I884290 B TWI884290 B TW I884290B
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- Prior art keywords
- measurement
- values
- features
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- parameters
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
- G01B21/045—Correction of measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
- G01N21/274—Calibration, base line adjustment, drift correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Data Mining & Analysis (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/030,690 | 2020-09-24 | ||
| US17/030,690 US11530913B2 (en) | 2020-09-24 | 2020-09-24 | Methods and systems for determining quality of semiconductor measurements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202213567A TW202213567A (zh) | 2022-04-01 |
| TWI884290B true TWI884290B (zh) | 2025-05-21 |
Family
ID=80740165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110125604A TWI884290B (zh) | 2020-09-24 | 2021-07-13 | 用於判定半導體量測之品質之方法及系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11530913B2 (https=) |
| EP (1) | EP4200598A4 (https=) |
| JP (1) | JP7595756B2 (https=) |
| KR (1) | KR102721341B1 (https=) |
| CN (1) | CN116018512B (https=) |
| TW (1) | TWI884290B (https=) |
| WO (1) | WO2022066378A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11868119B2 (en) * | 2021-09-24 | 2024-01-09 | Tokyo Electron Limited | Method and process using fingerprint based semiconductor manufacturing process fault detection |
| US12535438B2 (en) | 2022-07-19 | 2026-01-27 | Bruker Technologies Ltd. | Analysis of x-ray scatterometry data using deep learning |
| US12510590B2 (en) * | 2023-06-30 | 2025-12-30 | Kla Corporation | Metrology in the presence of CMOS under array (CuA) structures utilizing an effective medium model with physical modeling |
| CN116973819B (zh) * | 2023-09-22 | 2023-12-12 | 上海优立检测技术股份有限公司 | 一种微波电磁参数三维测试方法、系统及储存介质 |
| US20250198942A1 (en) * | 2023-12-15 | 2025-06-19 | Kla Corporation | Measurements Of Complex Semiconductor Structures Based On Component Measurement Signals |
| TWI872895B (zh) * | 2024-01-02 | 2025-02-11 | 財團法人工業技術研究院 | 衝壓製程品質評估方法 |
| DE102024108828A1 (de) * | 2024-03-27 | 2025-10-02 | AUDI HUNGARIA Zrt. | Verfahren und Vorrichtung zur Überprüfung einer Oberfläche eines Bauteils |
| WO2025245546A1 (en) * | 2024-05-19 | 2025-11-27 | Kla Corporation | Physics augmented regression algorithm for critical dimensions in large pitch targets |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092132A2 (en) * | 2010-12-29 | 2012-07-05 | Cognex Corporation | Determining the uniqueness of a model for machine vision |
| US20160154319A1 (en) * | 2013-08-13 | 2016-06-02 | Asml Netherlands B.V. | Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US6787773B1 (en) | 2000-06-07 | 2004-09-07 | Kla-Tencor Corporation | Film thickness measurement using electron-beam induced x-ray microanalysis |
| US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US20030002043A1 (en) | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US6716646B1 (en) | 2001-07-16 | 2004-04-06 | Advanced Micro Devices, Inc. | Method and apparatus for performing overlay measurements using scatterometry |
| WO2003054475A2 (en) | 2001-12-19 | 2003-07-03 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| US6778275B2 (en) | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| JP4222927B2 (ja) | 2002-09-20 | 2009-02-12 | エーエスエムエル ネザーランズ ビー.ブイ. | 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム |
| US6992764B1 (en) | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
| US7842933B2 (en) | 2003-10-22 | 2010-11-30 | Applied Materials Israel, Ltd. | System and method for measuring overlay errors |
| US6937337B2 (en) | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
| US7321426B1 (en) | 2004-06-02 | 2008-01-22 | Kla-Tencor Technologies Corporation | Optical metrology on patterned samples |
| US7478019B2 (en) | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| JP4585926B2 (ja) | 2005-06-17 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム |
| WO2007066787A1 (ja) * | 2005-12-05 | 2007-06-14 | National University Corporation Nagoya University | ハイブリッドgaによる複数パラメータの最適化方法、パターンマッチングによるデータ解析方法、放射線回折データに基づく物質構造の推定方法、ならびに関連するプログラム、記録媒体および各種装置 |
| US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| JP4887062B2 (ja) | 2006-03-14 | 2012-02-29 | 株式会社日立ハイテクノロジーズ | 試料寸法測定方法、及び試料寸法測定装置 |
| US7406153B2 (en) | 2006-08-15 | 2008-07-29 | Jordan Valley Semiconductors Ltd. | Control of X-ray beam spot size |
| US7873585B2 (en) | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
| US7929667B1 (en) | 2008-10-02 | 2011-04-19 | Kla-Tencor Corporation | High brightness X-ray metrology |
| US8068662B2 (en) | 2009-03-30 | 2011-11-29 | Hermes Microvision, Inc. | Method and system for determining a defect during charged particle beam inspection of a sample |
| JP5764380B2 (ja) | 2010-04-29 | 2015-08-19 | エフ イー アイ カンパニFei Company | Sem画像化法 |
| EP3779598B1 (en) | 2011-04-06 | 2022-12-21 | Kla-Tencor Corporation | Method for providing a set of process tool correctables |
| US9046475B2 (en) | 2011-05-19 | 2015-06-02 | Applied Materials Israel, Ltd. | High electron energy based overlay error measurement methods and systems |
| US9709903B2 (en) * | 2011-11-01 | 2017-07-18 | Kla-Tencor Corporation | Overlay target geometry for measuring multiple pitches |
| US10107621B2 (en) | 2012-02-15 | 2018-10-23 | Nanometrics Incorporated | Image based overlay measurement with finite gratings |
| US10801975B2 (en) | 2012-05-08 | 2020-10-13 | Kla-Tencor Corporation | Metrology tool with combined X-ray and optical scatterometers |
| US10013518B2 (en) | 2012-07-10 | 2018-07-03 | Kla-Tencor Corporation | Model building and analysis engine for combined X-ray and optical metrology |
| US9129715B2 (en) | 2012-09-05 | 2015-09-08 | SVXR, Inc. | High speed x-ray inspection microscope |
| WO2014062972A1 (en) | 2012-10-18 | 2014-04-24 | Kla-Tencor Corporation | Symmetric target design in scatterometry overlay metrology |
| US9581430B2 (en) | 2012-10-19 | 2017-02-28 | Kla-Tencor Corporation | Phase characterization of targets |
| US10769320B2 (en) | 2012-12-18 | 2020-09-08 | Kla-Tencor Corporation | Integrated use of model-based metrology and a process model |
| US9291554B2 (en) | 2013-02-05 | 2016-03-22 | Kla-Tencor Corporation | Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection |
| US9826614B1 (en) | 2013-03-15 | 2017-11-21 | Kla-Tencor Corporation | Compac X-ray source for semiconductor metrology |
| EP2978377B1 (en) * | 2013-03-26 | 2021-05-05 | Institute of Experimental and Applied Physics | Method of phase gradient radiography and arrangement of an imaging system for application of the method |
| US10101670B2 (en) | 2013-03-27 | 2018-10-16 | Kla-Tencor Corporation | Statistical model-based metrology |
| US9255877B2 (en) * | 2013-05-21 | 2016-02-09 | Kla-Tencor Corporation | Metrology system optimization for parameter tracking |
| US9915522B1 (en) | 2013-06-03 | 2018-03-13 | Kla-Tencor Corporation | Optimized spatial modeling for optical CD metrology |
| US9177873B2 (en) | 2013-07-29 | 2015-11-03 | GlobalFoundries, Inc. | Systems and methods for fabricating semiconductor device structures |
| US10502694B2 (en) | 2013-08-06 | 2019-12-10 | Kla-Tencor Corporation | Methods and apparatus for patterned wafer characterization |
| US9846132B2 (en) | 2013-10-21 | 2017-12-19 | Kla-Tencor Corporation | Small-angle scattering X-ray metrology systems and methods |
| US9885962B2 (en) | 2013-10-28 | 2018-02-06 | Kla-Tencor Corporation | Methods and apparatus for measuring semiconductor device overlay using X-ray metrology |
| WO2015167753A2 (en) | 2014-04-03 | 2015-11-05 | Massachusetts Institute Of Technology | Compact x-ray source for cd-saxs |
| US9494535B2 (en) | 2014-04-21 | 2016-11-15 | Kla-Tencor Corporation | Scatterometry-based imaging and critical dimension metrology |
| US10352876B2 (en) * | 2014-05-09 | 2019-07-16 | KLA—Tencor Corporation | Signal response metrology for scatterometry based overlay measurements |
| US10151986B2 (en) * | 2014-07-07 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology based on measurements of proxy structures |
| US10139352B2 (en) * | 2014-10-18 | 2018-11-27 | Kla-Tenor Corporation | Measurement of small box size targets |
| US10152678B2 (en) | 2014-11-19 | 2018-12-11 | Kla-Tencor Corporation | System, method and computer program product for combining raw data from multiple metrology tools |
| US10324050B2 (en) | 2015-01-14 | 2019-06-18 | Kla-Tencor Corporation | Measurement system optimization for X-ray based metrology |
| US10365225B1 (en) * | 2015-03-04 | 2019-07-30 | Kla-Tencor Corporation | Multi-location metrology |
| US10502549B2 (en) * | 2015-03-24 | 2019-12-10 | Kla-Tencor Corporation | Model-based single parameter measurement |
| US10545104B2 (en) | 2015-04-28 | 2020-01-28 | Kla-Tencor Corporation | Computationally efficient X-ray based overlay measurement |
| JP6959614B2 (ja) * | 2015-10-28 | 2021-11-02 | 国立大学法人 東京大学 | 分析装置,及びフローサイトメータ |
| US10352695B2 (en) | 2015-12-11 | 2019-07-16 | Kla-Tencor Corporation | X-ray scatterometry metrology for high aspect ratio structures |
| US10504759B2 (en) * | 2016-04-04 | 2019-12-10 | Kla-Tencor Corporation | Semiconductor metrology with information from multiple processing steps |
| US10346740B2 (en) * | 2016-06-01 | 2019-07-09 | Kla-Tencor Corp. | Systems and methods incorporating a neural network and a forward physical model for semiconductor applications |
| WO2018071716A1 (en) * | 2016-10-13 | 2018-04-19 | Kla-Tencor Corporation | Metrology systems and methods for process control |
| US10775323B2 (en) | 2016-10-18 | 2020-09-15 | Kla-Tencor Corporation | Full beam metrology for X-ray scatterometry systems |
| US10481111B2 (en) | 2016-10-21 | 2019-11-19 | Kla-Tencor Corporation | Calibration of a small angle X-ray scatterometry based metrology system |
| US10444643B2 (en) * | 2017-03-24 | 2019-10-15 | Nikon Research Corporation Of America | Lithographic thermal distortion compensation with the use of machine learning |
| US11073487B2 (en) | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| US11333621B2 (en) | 2017-07-11 | 2022-05-17 | Kla-Tencor Corporation | Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction |
| US10732515B2 (en) * | 2017-09-27 | 2020-08-04 | Kla-Tencor Corporation | Detection and measurement of dimensions of asymmetric structures |
| JP2020535484A (ja) * | 2017-09-28 | 2020-12-03 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ方法 |
| US11517197B2 (en) * | 2017-10-06 | 2022-12-06 | Canon Medical Systems Corporation | Apparatus and method for medical image reconstruction using deep learning for computed tomography (CT) image noise and artifacts reduction |
| US11519869B2 (en) | 2018-03-20 | 2022-12-06 | Kla Tencor Corporation | Methods and systems for real time measurement control |
| WO2019185233A1 (en) | 2018-03-29 | 2019-10-03 | Asml Netherlands B.V. | Method for evaluating control strategies in a semicondcutor manufacturing process |
| TWI749355B (zh) * | 2018-08-17 | 2021-12-11 | 荷蘭商Asml荷蘭公司 | 用於校正圖案化程序之度量衡資料之方法及相關的電腦程式產品 |
| EP3637186A1 (en) * | 2018-10-09 | 2020-04-15 | ASML Netherlands B.V. | Method of calibrating a plurality of metrology apparatuses, method of determining a parameter of interest, and metrology apparatus |
| US12044980B2 (en) * | 2018-12-03 | 2024-07-23 | Asml Netherlands B.V. | Method of manufacturing devices |
-
2020
- 2020-09-24 US US17/030,690 patent/US11530913B2/en active Active
-
2021
- 2021-07-13 TW TW110125604A patent/TWI884290B/zh active
- 2021-09-01 WO PCT/US2021/048591 patent/WO2022066378A1/en not_active Ceased
- 2021-09-01 EP EP21873172.7A patent/EP4200598A4/en active Pending
- 2021-09-01 CN CN202180053903.4A patent/CN116018512B/zh active Active
- 2021-09-01 KR KR1020237010863A patent/KR102721341B1/ko active Active
- 2021-09-01 JP JP2023519029A patent/JP7595756B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092132A2 (en) * | 2010-12-29 | 2012-07-05 | Cognex Corporation | Determining the uniqueness of a model for machine vision |
| US20160154319A1 (en) * | 2013-08-13 | 2016-06-02 | Asml Netherlands B.V. | Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230073225A (ko) | 2023-05-25 |
| CN116018512A (zh) | 2023-04-25 |
| EP4200598A1 (en) | 2023-06-28 |
| EP4200598A4 (en) | 2025-06-18 |
| US11530913B2 (en) | 2022-12-20 |
| JP2023544534A (ja) | 2023-10-24 |
| CN116018512B (zh) | 2024-09-17 |
| US20220090912A1 (en) | 2022-03-24 |
| WO2022066378A1 (en) | 2022-03-31 |
| TW202213567A (zh) | 2022-04-01 |
| JP7595756B2 (ja) | 2024-12-06 |
| KR102721341B1 (ko) | 2024-10-23 |
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