JP7588176B2 - 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Download PDF

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Publication number
JP7588176B2
JP7588176B2 JP2023064906A JP2023064906A JP7588176B2 JP 7588176 B2 JP7588176 B2 JP 7588176B2 JP 2023064906 A JP2023064906 A JP 2023064906A JP 2023064906 A JP2023064906 A JP 2023064906A JP 7588176 B2 JP7588176 B2 JP 7588176B2
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Japan
Prior art keywords
phase shift
film
shift film
group
reflectance
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JP2023064906A
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English (en)
Japanese (ja)
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JP2023080223A (ja
JP2023080223A5 (enExample
Inventor
洋平 池邊
勉 笑喜
貴弘 尾上
弘文 小坂井
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Hoya Corp
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Hoya Corp
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Priority claimed from JP2017107394A external-priority patent/JP6861095B2/ja
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Publication of JP2023080223A5 publication Critical patent/JP2023080223A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023064906A 2017-03-03 2023-04-12 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 Active JP7588176B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017040043 2017-03-03
JP2017040043 2017-03-03
JP2017107394A JP6861095B2 (ja) 2017-03-03 2017-05-31 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2021054859A JP7263424B2 (ja) 2017-03-03 2021-03-29 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Related Parent Applications (1)

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JP2021054859A Division JP7263424B2 (ja) 2017-03-03 2021-03-29 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2023080223A JP2023080223A (ja) 2023-06-08
JP2023080223A5 JP2023080223A5 (enExample) 2023-11-10
JP7588176B2 true JP7588176B2 (ja) 2024-11-21

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JP2023064906A Active JP7588176B2 (ja) 2017-03-03 2023-04-12 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Country Status (5)

Country Link
US (2) US11880130B2 (enExample)
JP (1) JP7588176B2 (enExample)
KR (1) KR20240025717A (enExample)
TW (2) TWI881609B (enExample)
WO (1) WO2018159392A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021085382A1 (ja) * 2019-10-29 2021-05-06 Ａｇｃ株式会社 反射型マスクブランクおよび反射型マスク
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
TW202202641A (zh) * 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料

Citations (2)

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Publication number Priority date Publication date Assignee Title
JP5716146B1 (ja) 2013-09-18 2015-05-13 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスク並びに半導体装置の製造方法
JP2015142083A (ja) 2014-01-30 2015-08-03 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法

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JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4458216B2 (ja) 2000-09-01 2010-04-28 信越化学工業株式会社 フォトマスク用ブランクス及びフォトマスクの製造方法
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP5266988B2 (ja) 2008-09-10 2013-08-21 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
KR20120034074A (ko) 2009-07-08 2012-04-09 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP5556452B2 (ja) 2010-07-06 2014-07-23 信越化学工業株式会社 パターン形成方法
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
TWI654478B (zh) * 2012-03-28 2019-03-21 日商Ｈｏｙａ股份有限公司 透過型光罩基底、透過型光罩及半導體裝置之製造方法
KR102068952B1 (ko) 2012-07-13 2020-01-21 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
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JP6739960B2 (ja) 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

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JP5716146B1 (ja) 2013-09-18 2015-05-13 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスク並びに半導体装置の製造方法
JP2015142083A (ja) 2014-01-30 2015-08-03 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法

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Publication number Publication date
TWI881609B (zh) 2025-04-21
KR20240025717A (ko) 2024-02-27
TW202309648A (zh) 2023-03-01
US11880130B2 (en) 2024-01-23
US12135496B2 (en) 2024-11-05
WO2018159392A1 (ja) 2018-09-07
US20230244135A1 (en) 2023-08-03
TW202417977A (zh) 2024-05-01
JP2023080223A (ja) 2023-06-08
TWI828372B (zh) 2024-01-01
US20240103354A1 (en) 2024-03-28

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