TWI881609B - 反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

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Publication number
TWI881609B
TWI881609B TW112149754A TW112149754A TWI881609B TW I881609 B TWI881609 B TW I881609B TW 112149754 A TW112149754 A TW 112149754A TW 112149754 A TW112149754 A TW 112149754A TW I881609 B TWI881609 B TW I881609B
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TW
Taiwan
Prior art keywords
group
film
phase shift
degrees
reflective mask
Prior art date
Application number
TW112149754A
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English (en)
Chinese (zh)
Other versions
TW202417977A (zh
Inventor
池邊洋平
笑喜勉
尾上貴弘
小坂井弘文
Original Assignee
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2017107394A external-priority patent/JP6861095B2/ja
Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202417977A publication Critical patent/TW202417977A/zh
Application granted granted Critical
Publication of TWI881609B publication Critical patent/TWI881609B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW112149754A 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法 TWI881609B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017040043 2017-03-03
JP2017-040043 2017-03-03
JP2017107394A JP6861095B2 (ja) 2017-03-03 2017-05-31 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2017-107394 2017-05-31

Publications (2)

Publication Number Publication Date
TW202417977A TW202417977A (zh) 2024-05-01
TWI881609B true TWI881609B (zh) 2025-04-21

Family

ID=63371276

Family Applications (2)

Application Number Title Priority Date Filing Date
TW112149754A TWI881609B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法
TW111139214A TWI828372B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW111139214A TWI828372B (zh) 2017-03-03 2018-03-02 反射型光罩基底、反射型光罩及半導體裝置之製造方法

Country Status (5)

Country Link
US (2) US11880130B2 (enExample)
JP (1) JP7588176B2 (enExample)
KR (1) KR20240025717A (enExample)
TW (2) TWI881609B (enExample)
WO (1) WO2018159392A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021085382A1 (ja) * 2019-10-29 2021-05-06 Ａｇｃ株式会社 反射型マスクブランクおよび反射型マスク
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
TW202202641A (zh) * 2020-07-13 2022-01-16 美商應用材料股份有限公司 極紫外線遮罩吸收劑材料

Citations (3)

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TW201122721A (en) * 2009-07-08 2011-07-01 Asahi Glass Co Ltd Euv-lithography reflection-type mask blank
WO2015098400A1 (ja) * 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
US20170010527A1 (en) * 2012-03-28 2017-01-12 Hoya Corporation Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method

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JPS5233321B1 (enExample) 1971-07-10 1977-08-27
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP4458216B2 (ja) 2000-09-01 2010-04-28 信越化学工業株式会社 フォトマスク用ブランクス及びフォトマスクの製造方法
US7282307B2 (en) * 2004-06-18 2007-10-16 Freescale Semiconductor, Inc. Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP5266988B2 (ja) 2008-09-10 2013-08-21 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクブランク、ハーフトーン型ｅｕｖマスクの製造方法及びパターン転写方法
JP5556452B2 (ja) 2010-07-06 2014-07-23 信越化学工業株式会社 パターン形成方法
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR102068952B1 (ko) 2012-07-13 2020-01-21 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
KR20170120212A (ko) 2013-09-18 2017-10-30 호야 가부시키가이샤 반사형 마스크 블랭크 및 그 제조방법, 반사형 마스크 그리고 반도체 장치의 제조방법
JP6381921B2 (ja) 2014-01-30 2018-08-29 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6499440B2 (ja) 2014-12-24 2019-04-10 Hoya株式会社 反射型マスクブランク及び反射型マスク
JP6739960B2 (ja) 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6861095B2 (ja) 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201122721A (en) * 2009-07-08 2011-07-01 Asahi Glass Co Ltd Euv-lithography reflection-type mask blank
US20170010527A1 (en) * 2012-03-28 2017-01-12 Hoya Corporation Mask blank substrate, substrate with multilayer reflection film, transmissive mask blank, reflective mask, and semiconductor device fabrication method
WO2015098400A1 (ja) * 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
KR20240025717A (ko) 2024-02-27
TW202309648A (zh) 2023-03-01
US11880130B2 (en) 2024-01-23
US12135496B2 (en) 2024-11-05
WO2018159392A1 (ja) 2018-09-07
US20230244135A1 (en) 2023-08-03
JP7588176B2 (ja) 2024-11-21
TW202417977A (zh) 2024-05-01
JP2023080223A (ja) 2023-06-08
TWI828372B (zh) 2024-01-01
US20240103354A1 (en) 2024-03-28

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