JP7587984B2 - 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物 - Google Patents

保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物 Download PDF

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Publication number
JP7587984B2
JP7587984B2 JP2020507800A JP2020507800A JP7587984B2 JP 7587984 B2 JP7587984 B2 JP 7587984B2 JP 2020507800 A JP2020507800 A JP 2020507800A JP 2020507800 A JP2020507800 A JP 2020507800A JP 7587984 B2 JP7587984 B2 JP 7587984B2
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Prior art keywords
group
underlayer film
methyl
formula
resist underlayer
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JPWO2019181873A1 (ja
Inventor
亘 柴山
諭 武田
謙 石橋
誠 中島
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to JP2023163948A priority Critical patent/JP7602212B2/ja
Priority to JP2023163712A priority patent/JP7769309B2/ja
Priority to JP2023163753A priority patent/JP7684640B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020507800A 2018-03-19 2019-03-18 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物 Active JP7587984B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023163948A JP7602212B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163712A JP7769309B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163753A JP7684640B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018051617 2018-03-19
JP2018051617 2018-03-19
PCT/JP2019/011245 WO2019181873A1 (ja) 2018-03-19 2019-03-18 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

Related Child Applications (3)

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JP2023163753A Division JP7684640B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163948A Division JP7602212B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163712A Division JP7769309B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

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JPWO2019181873A1 JPWO2019181873A1 (ja) 2021-04-01
JP7587984B2 true JP7587984B2 (ja) 2024-11-21

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JP2020507800A Active JP7587984B2 (ja) 2018-03-19 2019-03-18 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163948A Active JP7602212B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163712A Active JP7769309B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163753A Active JP7684640B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

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JP2023163948A Active JP7602212B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163712A Active JP7769309B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
JP2023163753A Active JP7684640B2 (ja) 2018-03-19 2023-09-26 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

Country Status (6)

Country Link
US (1) US20210018840A1 (enExample)
JP (4) JP7587984B2 (enExample)
KR (1) KR102779929B1 (enExample)
CN (1) CN111902774B (enExample)
TW (1) TW201945848A (enExample)
WO (1) WO2019181873A1 (enExample)

Families Citing this family (2)

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JPWO2022114132A1 (enExample) * 2020-11-27 2022-06-02
TW202305509A (zh) * 2021-03-31 2023-02-01 日商日產化學股份有限公司 含矽之光阻下層膜形成用組成物

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JP2010262230A (ja) 2009-05-11 2010-11-18 Shin-Etsu Chemical Co Ltd ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法
JP2013166812A (ja) 2012-02-14 2013-08-29 Shin-Etsu Chemical Co Ltd ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法
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JP2010262230A (ja) 2009-05-11 2010-11-18 Shin-Etsu Chemical Co Ltd ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法
JP2013166812A (ja) 2012-02-14 2013-08-29 Shin-Etsu Chemical Co Ltd ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法
JP2013167669A (ja) 2012-02-14 2013-08-29 Shin Etsu Chem Co Ltd ケイ素含有表面改質剤、これを含むレジスト下層膜形成用組成物、及びパターン形成方法
JP2013224279A (ja) 2012-04-23 2013-10-31 Shin-Etsu Chemical Co Ltd ケイ素化合物、ケイ素含有化合物、これを含むレジスト下層膜形成用組成物及びパターン形成方法

Also Published As

Publication number Publication date
WO2019181873A1 (ja) 2019-09-26
JP7684640B2 (ja) 2025-05-28
JP2023175874A (ja) 2023-12-12
US20210018840A1 (en) 2021-01-21
TW201945848A (zh) 2019-12-01
JP7769309B2 (ja) 2025-11-13
CN111902774A (zh) 2020-11-06
JP2023175872A (ja) 2023-12-12
KR20200132864A (ko) 2020-11-25
JP7602212B2 (ja) 2024-12-18
KR102779929B1 (ko) 2025-03-12
CN111902774B (zh) 2023-10-31
JP2023175873A (ja) 2023-12-12
JPWO2019181873A1 (ja) 2021-04-01

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