CN111902774B - 包含硝酸和被保护了的苯酚基的含硅抗蚀剂下层膜形成用组合物 - Google Patents

包含硝酸和被保护了的苯酚基的含硅抗蚀剂下层膜形成用组合物 Download PDF

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Publication number
CN111902774B
CN111902774B CN201980020366.6A CN201980020366A CN111902774B CN 111902774 B CN111902774 B CN 111902774B CN 201980020366 A CN201980020366 A CN 201980020366A CN 111902774 B CN111902774 B CN 111902774B
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underlayer film
resist
group
resist underlayer
formula
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CN111902774A (zh
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柴山亘
武田谕
石桥谦
中岛诚
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Nissan Chemical Corp
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Nissan Chemical Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201980020366.6A 2018-03-19 2019-03-18 包含硝酸和被保护了的苯酚基的含硅抗蚀剂下层膜形成用组合物 Active CN111902774B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-051617 2018-03-19
JP2018051617 2018-03-19
PCT/JP2019/011245 WO2019181873A1 (ja) 2018-03-19 2019-03-18 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物

Publications (2)

Publication Number Publication Date
CN111902774A CN111902774A (zh) 2020-11-06
CN111902774B true CN111902774B (zh) 2023-10-31

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CN201980020366.6A Active CN111902774B (zh) 2018-03-19 2019-03-18 包含硝酸和被保护了的苯酚基的含硅抗蚀剂下层膜形成用组合物

Country Status (6)

Country Link
US (1) US20210018840A1 (enExample)
JP (4) JP7587984B2 (enExample)
KR (1) KR102779929B1 (enExample)
CN (1) CN111902774B (enExample)
TW (1) TW201945848A (enExample)
WO (1) WO2019181873A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022114132A1 (enExample) * 2020-11-27 2022-06-02
TW202305509A (zh) * 2021-03-31 2023-02-01 日商日產化學股份有限公司 含矽之光阻下層膜形成用組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101946209A (zh) * 2008-02-18 2011-01-12 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
CN107075302A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 含交联反应性硅的膜形成用组合物

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2034364A4 (en) * 2006-06-27 2010-12-01 Jsr Corp METHOD FOR FORMING A STRUCTURE AND COMPOSITION FOR FORMING AN ORGANIC THIN FILM FOR USE THEREOF
JP5038354B2 (ja) 2009-05-11 2012-10-03 信越化学工業株式会社 ケイ素含有反射防止膜形成用組成物、ケイ素含有反射防止膜形成基板及びパターン形成方法
KR101400182B1 (ko) 2009-12-31 2014-05-27 제일모직 주식회사 포토레지스트 하층막용 조성물 및 이를 이용하는 반도체 소자의 제조 방법
JP5650086B2 (ja) * 2011-06-28 2015-01-07 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
US9337052B2 (en) * 2011-10-06 2016-05-10 Nissan Chemical Industries, Ltd. Silicon-containing EUV resist underlayer film forming composition
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5739360B2 (ja) * 2012-02-14 2015-06-24 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物、及びパターン形成方法
KR102044968B1 (ko) * 2012-04-23 2019-12-05 닛산 가가쿠 가부시키가이샤 첨가제를 포함하는 규소함유 euv레지스트 하층막 형성 조성물
JP5833492B2 (ja) * 2012-04-23 2015-12-16 信越化学工業株式会社 ケイ素化合物、ポリシロキサン化合物、これを含むレジスト下層膜形成用組成物及びパターン形成方法
JP5886804B2 (ja) * 2013-09-02 2016-03-16 信越化学工業株式会社 レジスト組成物の製造方法
US10197917B2 (en) * 2014-06-17 2019-02-05 Nissan Chemical Industries, Ltd. Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore
WO2016009939A1 (ja) * 2014-07-15 2016-01-21 日産化学工業株式会社 ハロゲン化スルホニルアルキル基を有するシリコン含有レジスト下層膜形成組成物
JP6243815B2 (ja) * 2014-09-01 2017-12-06 信越化学工業株式会社 半導体装置基板の製造方法
JP6250513B2 (ja) * 2014-10-03 2017-12-20 信越化学工業株式会社 塗布型ケイ素含有膜形成用組成物、基板、及びパターン形成方法
US9580623B2 (en) * 2015-03-20 2017-02-28 Shin-Etsu Chemical Co., Ltd. Patterning process using a boron phosphorus silicon glass film
JP6445382B2 (ja) * 2015-04-24 2018-12-26 信越化学工業株式会社 リソグラフィー用塗布膜形成用組成物の製造方法及びパターン形成方法
CN107615168B (zh) * 2015-06-11 2023-12-19 日产化学工业株式会社 感放射线性组合物
KR102038942B1 (ko) * 2015-06-24 2019-10-31 후지필름 가부시키가이샤 패턴 형성 방법, 적층체, 및 유기 용제 현상용 레지스트 조성물
US20190265593A1 (en) * 2016-10-27 2019-08-29 Nissan Chemical Corporation Silicon-containing resist underlayer film-forming composition containing organic group having dihydroxy group
US11966164B2 (en) * 2017-10-25 2024-04-23 Nissan Chemical Corporation Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101946209A (zh) * 2008-02-18 2011-01-12 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
CN102754034A (zh) * 2010-02-19 2012-10-24 日产化学工业株式会社 具有含氮环的含有硅的形成抗蚀剂下层膜的组合物
CN107077072A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
CN107075302A (zh) * 2014-11-19 2017-08-18 日产化学工业株式会社 含交联反应性硅的膜形成用组合物

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Publication number Publication date
WO2019181873A1 (ja) 2019-09-26
JP7684640B2 (ja) 2025-05-28
JP2023175874A (ja) 2023-12-12
US20210018840A1 (en) 2021-01-21
TW201945848A (zh) 2019-12-01
JP7769309B2 (ja) 2025-11-13
CN111902774A (zh) 2020-11-06
JP2023175872A (ja) 2023-12-12
KR20200132864A (ko) 2020-11-25
JP7602212B2 (ja) 2024-12-18
KR102779929B1 (ko) 2025-03-12
JP2023175873A (ja) 2023-12-12
JPWO2019181873A1 (ja) 2021-04-01
JP7587984B2 (ja) 2024-11-21

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