JP7586373B2 - 反射型マスクブランク並びに反射型マスク及びその製造方法 - Google Patents

反射型マスクブランク並びに反射型マスク及びその製造方法 Download PDF

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JP7586373B2
JP7586373B2 JP2024506294A JP2024506294A JP7586373B2 JP 7586373 B2 JP7586373 B2 JP 7586373B2 JP 2024506294 A JP2024506294 A JP 2024506294A JP 2024506294 A JP2024506294 A JP 2024506294A JP 7586373 B2 JP7586373 B2 JP 7586373B2
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Japan
Prior art keywords
film
reflective mask
pattern
mask blank
substrate
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JP2024506294A
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Japanese (ja)
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JPWO2023171583A1 (https=
Inventor
健 岡東
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AGC Inc
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Asahi Glass Co Ltd
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Priority to JP2024195460A priority Critical patent/JP2025020341A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
JP2024506294A 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法 Active JP7586373B2 (ja)

Priority Applications (1)

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JP2024195460A JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

Applications Claiming Priority (3)

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JP2022035462 2022-03-08
JP2022035462 2022-03-08
PCT/JP2023/008186 WO2023171583A1 (ja) 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法

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JPWO2023171583A1 JPWO2023171583A1 (https=) 2023-09-14
JP7586373B2 true JP7586373B2 (ja) 2024-11-19

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JP2024506294A Active JP7586373B2 (ja) 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法
JP2024195460A Pending JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

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US (1) US12228853B2 (https=)
JP (2) JP7586373B2 (https=)
KR (1) KR102811982B1 (https=)
TW (1) TW202336520A (https=)
WO (1) WO2023171583A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2018180544A (ja) 2017-04-17 2018-11-15 Ａｇｃ株式会社 Ｅｕｖ露光用反射型マスクブランク、および反射型マスク
US20190146325A1 (en) 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
JP2022505688A (ja) 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6408790B2 (ja) 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2020153228A1 (ja) * 2019-01-21 2020-07-30 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2018180544A (ja) 2017-04-17 2018-11-15 Ａｇｃ株式会社 Ｅｕｖ露光用反射型マスクブランク、および反射型マスク
US20190146325A1 (en) 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
JP2022505688A (ja) 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

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Publication number Publication date
TW202336520A (zh) 2023-09-16
WO2023171583A1 (ja) 2023-09-14
JPWO2023171583A1 (https=) 2023-09-14
US20240419063A1 (en) 2024-12-19
KR102811982B1 (ko) 2025-05-23
JP2025020341A (ja) 2025-02-12
KR20240136468A (ko) 2024-09-13
US12228853B2 (en) 2025-02-18

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