KR102811982B1 - 반사형 마스크 블랭크 그리고 반사형 마스크 및 그 제조 방법 - Google Patents

반사형 마스크 블랭크 그리고 반사형 마스크 및 그 제조 방법 Download PDF

Info

Publication number
KR102811982B1
KR102811982B1 KR1020247029740A KR20247029740A KR102811982B1 KR 102811982 B1 KR102811982 B1 KR 102811982B1 KR 1020247029740 A KR1020247029740 A KR 1020247029740A KR 20247029740 A KR20247029740 A KR 20247029740A KR 102811982 B1 KR102811982 B1 KR 102811982B1
Authority
KR
South Korea
Prior art keywords
film
reflective mask
pattern
mask blank
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020247029740A
Other languages
English (en)
Korean (ko)
Other versions
KR20240136468A (ko
Inventor
다케시 오카토
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20240136468A publication Critical patent/KR20240136468A/ko
Application granted granted Critical
Publication of KR102811982B1 publication Critical patent/KR102811982B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
KR1020247029740A 2022-03-08 2023-03-03 반사형 마스크 블랭크 그리고 반사형 마스크 및 그 제조 방법 Active KR102811982B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-035462 2022-03-08
JP2022035462 2022-03-08
PCT/JP2023/008186 WO2023171583A1 (ja) 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法

Publications (2)

Publication Number Publication Date
KR20240136468A KR20240136468A (ko) 2024-09-13
KR102811982B1 true KR102811982B1 (ko) 2025-05-23

Family

ID=87934975

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247029740A Active KR102811982B1 (ko) 2022-03-08 2023-03-03 반사형 마스크 블랭크 그리고 반사형 마스크 및 그 제조 방법

Country Status (5)

Country Link
US (1) US12228853B2 (https=)
JP (2) JP7586373B2 (https=)
KR (1) KR102811982B1 (https=)
TW (1) TW202336520A (https=)
WO (1) WO2023171583A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2022505688A (ja) 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6408790B2 (ja) 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US11281088B2 (en) 2017-04-17 2022-03-22 AGC Inc. Reflective mask blank for EUV exposure, and reflective mask
US10996553B2 (en) 2017-11-14 2021-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
WO2020153228A1 (ja) * 2019-01-21 2020-07-30 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2022505688A (ja) 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Also Published As

Publication number Publication date
TW202336520A (zh) 2023-09-16
WO2023171583A1 (ja) 2023-09-14
JPWO2023171583A1 (https=) 2023-09-14
US20240419063A1 (en) 2024-12-19
JP2025020341A (ja) 2025-02-12
JP7586373B2 (ja) 2024-11-19
KR20240136468A (ko) 2024-09-13
US12228853B2 (en) 2025-02-18

Similar Documents

Publication Publication Date Title
US12111566B2 (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
KR102824269B1 (ko) 반사형 포토마스크 블랭크 및 반사형 포토마스크
JP7676624B2 (ja) 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
KR102698817B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
JP5541159B2 (ja) Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
KR102631779B1 (ko) 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법
KR102511751B1 (ko) 극자외선 리소그래피용 블랭크마스크 및 포토마스크
KR20210134605A (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
US20240027891A1 (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
KR20200088283A (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 및 반도체 장치의 제조 방법
WO2020045029A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR20230119119A (ko) 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6968945B2 (ja) 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
TW202332985A (zh) 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法
KR102782121B1 (ko) 마스크 블랭크, 위상 시프트 마스크, 위상 시프트 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR102811982B1 (ko) 반사형 마스크 블랭크 그리고 반사형 마스크 및 그 제조 방법
TW202321815A (zh) 附多層反射膜之基板、反射型遮罩基底、反射型遮罩、及半導體裝置之製造方法
KR20240089139A (ko) 다층 반사막 부착 기판, 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
TW202244595A (zh) 反射型空白光罩及反射型光罩

Legal Events

Date Code Title Description
A302 Request for accelerated examination
PA0105 International application

Patent event date: 20240904

Patent event code: PA01051R01D

Comment text: International Patent Application

PA0201 Request for examination
PA0302 Request for accelerated examination

Patent event date: 20240904

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20241121

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250331

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20250520

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20250521

End annual number: 3

Start annual number: 1

PG1601 Publication of registration