JPWO2023171583A1 - - Google Patents

Info

Publication number
JPWO2023171583A1
JPWO2023171583A1 JP2024506294A JP2024506294A JPWO2023171583A1 JP WO2023171583 A1 JPWO2023171583 A1 JP WO2023171583A1 JP 2024506294 A JP2024506294 A JP 2024506294A JP 2024506294 A JP2024506294 A JP 2024506294A JP WO2023171583 A1 JPWO2023171583 A1 JP WO2023171583A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024506294A
Other languages
Japanese (ja)
Other versions
JP7586373B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023171583A1 publication Critical patent/JPWO2023171583A1/ja
Priority to JP2024195460A priority Critical patent/JP2025020341A/ja
Application granted granted Critical
Publication of JP7586373B2 publication Critical patent/JP7586373B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Filters (AREA)
JP2024506294A 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法 Active JP7586373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024195460A JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022035462 2022-03-08
JP2022035462 2022-03-08
PCT/JP2023/008186 WO2023171583A1 (ja) 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024195460A Division JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2023171583A1 true JPWO2023171583A1 (https=) 2023-09-14
JP7586373B2 JP7586373B2 (ja) 2024-11-19

Family

ID=87934975

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2024506294A Active JP7586373B2 (ja) 2022-03-08 2023-03-03 反射型マスクブランク並びに反射型マスク及びその製造方法
JP2024195460A Pending JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024195460A Pending JP2025020341A (ja) 2022-03-08 2024-11-07 反射型マスクブランク並びに反射型マスク及びその製造方法

Country Status (5)

Country Link
US (1) US12228853B2 (https=)
JP (2) JP7586373B2 (https=)
KR (1) KR102811982B1 (https=)
TW (1) TW202336520A (https=)
WO (1) WO2023171583A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119001940A (zh) * 2024-08-15 2024-11-22 中国科学院半导体研究所 薄膜镜面及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) * 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2018180544A (ja) * 2017-04-17 2018-11-15 Ａｇｃ株式会社 Ｅｕｖ露光用反射型マスクブランク、および反射型マスク
US20190146325A1 (en) * 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
JP2022505688A (ja) * 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6408790B2 (ja) 2013-05-31 2018-10-17 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7447812B2 (ja) * 2019-01-21 2024-03-12 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、および反射型マスクブランクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018169617A (ja) * 2013-09-27 2018-11-01 Hoya株式会社 マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2018180544A (ja) * 2017-04-17 2018-11-15 Ａｇｃ株式会社 Ｅｕｖ露光用反射型マスクブランク、および反射型マスク
US20190146325A1 (en) * 2017-11-14 2019-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same
JP2022505688A (ja) * 2018-10-26 2022-01-14 アプライド マテリアルズ インコーポレイテッド 裏側コーティングを有する極紫外線マスク

Also Published As

Publication number Publication date
US20240419063A1 (en) 2024-12-19
TW202336520A (zh) 2023-09-16
JP2025020341A (ja) 2025-02-12
WO2023171583A1 (ja) 2023-09-14
KR20240136468A (ko) 2024-09-13
JP7586373B2 (ja) 2024-11-19
US12228853B2 (en) 2025-02-18
KR102811982B1 (ko) 2025-05-23

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