JP7586082B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
- Publication number
- JP7586082B2 JP7586082B2 JP2021537274A JP2021537274A JP7586082B2 JP 7586082 B2 JP7586082 B2 JP 7586082B2 JP 2021537274 A JP2021537274 A JP 2021537274A JP 2021537274 A JP2021537274 A JP 2021537274A JP 7586082 B2 JP7586082 B2 JP 7586082B2
- Authority
- JP
- Japan
- Prior art keywords
- sidewall
- semiconductor layer
- region
- insulating film
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 145
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 72
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims description 40
- 229910052799 carbon Inorganic materials 0.000 claims description 30
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims 8
- 239000010410 layer Substances 0.000 description 121
- 238000000034 method Methods 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 27
- 230000015556 catabolic process Effects 0.000 description 22
- 150000001721 carbon Chemical group 0.000 description 19
- 238000005530 etching Methods 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000012141 concentrate Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 101000726148 Homo sapiens Protein crumbs homolog 1 Proteins 0.000 description 5
- 101000726110 Homo sapiens Protein crumbs homolog 2 Proteins 0.000 description 5
- 102100027331 Protein crumbs homolog 1 Human genes 0.000 description 5
- 102100027317 Protein crumbs homolog 2 Human genes 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 101000726113 Homo sapiens Protein crumbs homolog 3 Proteins 0.000 description 3
- 102100027316 Protein crumbs homolog 3 Human genes 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 102100029968 Calreticulin Human genes 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101000793651 Homo sapiens Calreticulin Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019144751 | 2019-08-06 | ||
| JP2019144751 | 2019-08-06 | ||
| PCT/JP2020/029300 WO2021024916A1 (ja) | 2019-08-06 | 2020-07-30 | 炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021024916A1 JPWO2021024916A1 (enrdf_load_stackoverflow) | 2021-02-11 |
| JP7586082B2 true JP7586082B2 (ja) | 2024-11-19 |
Family
ID=74504109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021537274A Active JP7586082B2 (ja) | 2019-08-06 | 2020-07-30 | 炭化珪素半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7586082B2 (enrdf_load_stackoverflow) |
| WO (1) | WO2021024916A1 (enrdf_load_stackoverflow) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012127821A1 (ja) | 2011-03-23 | 2012-09-27 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| WO2014148130A1 (ja) | 2013-03-19 | 2014-09-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2016164906A (ja) | 2015-03-06 | 2016-09-08 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
| US20160351668A1 (en) | 2015-05-28 | 2016-12-01 | Infineon Technologies Ag | Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure |
| JP2016213421A (ja) | 2015-05-13 | 2016-12-15 | 株式会社豊田中央研究所 | 半導体装置 |
| JP2018093135A (ja) | 2016-12-07 | 2018-06-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2020
- 2020-07-30 JP JP2021537274A patent/JP7586082B2/ja active Active
- 2020-07-30 WO PCT/JP2020/029300 patent/WO2021024916A1/ja active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012127821A1 (ja) | 2011-03-23 | 2012-09-27 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| WO2014148130A1 (ja) | 2013-03-19 | 2014-09-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2016164906A (ja) | 2015-03-06 | 2016-09-08 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
| JP2016213421A (ja) | 2015-05-13 | 2016-12-15 | 株式会社豊田中央研究所 | 半導体装置 |
| US20160351668A1 (en) | 2015-05-28 | 2016-12-01 | Infineon Technologies Ag | Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure |
| JP2018093135A (ja) | 2016-12-07 | 2018-06-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021024916A1 (enrdf_load_stackoverflow) | 2021-02-11 |
| WO2021024916A1 (ja) | 2021-02-11 |
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