JPWO2021024916A1 - - Google Patents
Info
- Publication number
- JPWO2021024916A1 JPWO2021024916A1 JP2021537274A JP2021537274A JPWO2021024916A1 JP WO2021024916 A1 JPWO2021024916 A1 JP WO2021024916A1 JP 2021537274 A JP2021537274 A JP 2021537274A JP 2021537274 A JP2021537274 A JP 2021537274A JP WO2021024916 A1 JPWO2021024916 A1 JP WO2021024916A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019144751 | 2019-08-06 | ||
| JP2019144751 | 2019-08-06 | ||
| PCT/JP2020/029300 WO2021024916A1 (ja) | 2019-08-06 | 2020-07-30 | 炭化珪素半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021024916A1 true JPWO2021024916A1 (enrdf_load_stackoverflow) | 2021-02-11 |
| JP7586082B2 JP7586082B2 (ja) | 2024-11-19 |
Family
ID=74504109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021537274A Active JP7586082B2 (ja) | 2019-08-06 | 2020-07-30 | 炭化珪素半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7586082B2 (enrdf_load_stackoverflow) |
| WO (1) | WO2021024916A1 (enrdf_load_stackoverflow) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012127821A1 (ja) * | 2011-03-23 | 2012-09-27 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| WO2014148130A1 (ja) * | 2013-03-19 | 2014-09-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2016164906A (ja) * | 2015-03-06 | 2016-09-08 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
| US20160351668A1 (en) * | 2015-05-28 | 2016-12-01 | Infineon Technologies Ag | Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure |
| JP2016213421A (ja) * | 2015-05-13 | 2016-12-15 | 株式会社豊田中央研究所 | 半導体装置 |
| JP2018093135A (ja) * | 2016-12-07 | 2018-06-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
-
2020
- 2020-07-30 JP JP2021537274A patent/JP7586082B2/ja active Active
- 2020-07-30 WO PCT/JP2020/029300 patent/WO2021024916A1/ja active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012127821A1 (ja) * | 2011-03-23 | 2012-09-27 | パナソニック株式会社 | 半導体装置およびその製造方法 |
| WO2014148130A1 (ja) * | 2013-03-19 | 2014-09-25 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2016164906A (ja) * | 2015-03-06 | 2016-09-08 | 豊田合成株式会社 | 半導体装置およびその製造方法ならびに電力変換装置 |
| JP2016213421A (ja) * | 2015-05-13 | 2016-12-15 | 株式会社豊田中央研究所 | 半導体装置 |
| US20160351668A1 (en) * | 2015-05-28 | 2016-12-01 | Infineon Technologies Ag | Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion Terminating the Electrode Structure |
| JP2018093135A (ja) * | 2016-12-07 | 2018-06-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7586082B2 (ja) | 2024-11-19 |
| WO2021024916A1 (ja) | 2021-02-11 |
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