JP7583953B2 - 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置 - Google Patents

極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置 Download PDF

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JP7583953B2
JP7583953B2 JP2023550199A JP2023550199A JP7583953B2 JP 7583953 B2 JP7583953 B2 JP 7583953B2 JP 2023550199 A JP2023550199 A JP 2023550199A JP 2023550199 A JP2023550199 A JP 2023550199A JP 7583953 B2 JP7583953 B2 JP 7583953B2
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Japan
Prior art keywords
photomask
euv
gas
processing chamber
reducing agent
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JP2023550199A
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Japanese (ja)
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JP2024507524A (ja
JP2024507524A5 (cg-RX-API-DMAC7.html
Inventor
バンチウ ウー，
カリード マハムレー，
エリヤフ シュロモ ダガン，
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Applied Materials Inc
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Applied Materials Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023550199A 2021-02-25 2022-02-08 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置 Active JP7583953B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25
PCT/US2022/015554 WO2022182510A1 (en) 2021-02-25 2022-02-08 Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks

Publications (3)

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JP2024507524A JP2024507524A (ja) 2024-02-20
JP2024507524A5 JP2024507524A5 (cg-RX-API-DMAC7.html) 2024-10-21
JP7583953B2 true JP7583953B2 (ja) 2024-11-14

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JP2023550199A Active JP7583953B2 (ja) 2021-02-25 2022-02-08 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置

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US (1) US20240118603A1 (cg-RX-API-DMAC7.html)
EP (1) EP4298479A4 (cg-RX-API-DMAC7.html)
JP (1) JP7583953B2 (cg-RX-API-DMAC7.html)
KR (1) KR102959585B1 (cg-RX-API-DMAC7.html)
CN (1) CN117043674A (cg-RX-API-DMAC7.html)
TW (1) TW202238249A (cg-RX-API-DMAC7.html)
WO (1) WO2022182510A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024129260A1 (en) * 2022-12-12 2024-06-20 Lam Research Corporation Controlling gas flows in processing tool
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems
EP4790166A1 (en) 2025-02-10 2026-08-12 ASML Netherlands B.V. Method for coating a component of a lithographic apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012199576A (ja) 2003-02-14 2012-10-18 Applied Materials Inc 水素含有ラジカルによる未変性酸化物の洗浄
WO2015137077A1 (ja) 2014-03-11 2015-09-17 芝浦メカトロニクス株式会社 反射型マスクの洗浄装置および反射型マスクの洗浄方法
JP2016528734A (ja) 2013-08-09 2016-09-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
WO2019124321A1 (ja) 2017-12-18 2019-06-27 積水化学工業株式会社 表面処理方法及び装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012199576A (ja) 2003-02-14 2012-10-18 Applied Materials Inc 水素含有ラジカルによる未変性酸化物の洗浄
JP2016528734A (ja) 2013-08-09 2016-09-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
WO2015137077A1 (ja) 2014-03-11 2015-09-17 芝浦メカトロニクス株式会社 反射型マスクの洗浄装置および反射型マスクの洗浄方法
JP2019215555A (ja) 2014-03-11 2019-12-19 芝浦メカトロニクス株式会社 反射型マスクの洗浄装置および反射型マスクの洗浄方法
WO2019124321A1 (ja) 2017-12-18 2019-06-27 積水化学工業株式会社 表面処理方法及び装置

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Publication number Publication date
US20240118603A1 (en) 2024-04-11
WO2022182510A1 (en) 2022-09-01
EP4298479A1 (en) 2024-01-03
JP2024507524A (ja) 2024-02-20
KR102959585B1 (ko) 2026-04-29
EP4298479A4 (en) 2025-06-25
TW202238249A (zh) 2022-10-01
CN117043674A (zh) 2023-11-10
KR20230144645A (ko) 2023-10-16

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