TW202238249A - 極紫外光光罩上氧化釕還原的方法和裝置 - Google Patents

極紫外光光罩上氧化釕還原的方法和裝置 Download PDF

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Publication number
TW202238249A
TW202238249A TW111104880A TW111104880A TW202238249A TW 202238249 A TW202238249 A TW 202238249A TW 111104880 A TW111104880 A TW 111104880A TW 111104880 A TW111104880 A TW 111104880A TW 202238249 A TW202238249 A TW 202238249A
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TW
Taiwan
Prior art keywords
euv
reticle
gas
processing chamber
mask
Prior art date
Application number
TW111104880A
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English (en)
Chinese (zh)
Inventor
半秋 吳
卡里德 馬卡姆瑞
艾利亞胡薛羅摩 達根
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202238249A publication Critical patent/TW202238249A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111104880A 2021-02-25 2022-02-10 極紫外光光罩上氧化釕還原的方法和裝置 TW202238249A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25

Publications (1)

Publication Number Publication Date
TW202238249A true TW202238249A (zh) 2022-10-01

Family

ID=83048389

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111104880A TW202238249A (zh) 2021-02-25 2022-02-10 極紫外光光罩上氧化釕還原的方法和裝置

Country Status (7)

Country Link
US (1) US20240118603A1 (cg-RX-API-DMAC7.html)
EP (1) EP4298479A4 (cg-RX-API-DMAC7.html)
JP (1) JP7583953B2 (cg-RX-API-DMAC7.html)
KR (1) KR102959585B1 (cg-RX-API-DMAC7.html)
CN (1) CN117043674A (cg-RX-API-DMAC7.html)
TW (1) TW202238249A (cg-RX-API-DMAC7.html)
WO (1) WO2022182510A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024129260A1 (en) * 2022-12-12 2024-06-20 Lam Research Corporation Controlling gas flows in processing tool
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems
EP4790166A1 (en) 2025-02-10 2026-08-12 ASML Netherlands B.V. Method for coating a component of a lithographic apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004074932A2 (en) 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
JP6637420B2 (ja) * 2013-08-09 2020-01-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
CN106164771B (zh) * 2014-03-11 2020-08-04 芝浦机械电子株式会社 反射型掩膜的清洗装置、及反射型掩膜的清洗方法
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface
US20200306802A1 (en) 2017-12-18 2020-10-01 Sekisui Chemical Co., Ltd. Surface treatment method and surface treatment apparatus

Also Published As

Publication number Publication date
US20240118603A1 (en) 2024-04-11
WO2022182510A1 (en) 2022-09-01
EP4298479A1 (en) 2024-01-03
JP7583953B2 (ja) 2024-11-14
JP2024507524A (ja) 2024-02-20
KR102959585B1 (ko) 2026-04-29
EP4298479A4 (en) 2025-06-25
CN117043674A (zh) 2023-11-10
KR20230144645A (ko) 2023-10-16

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