KR102959585B1 - 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치 - Google Patents

극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치

Info

Publication number
KR102959585B1
KR102959585B1 KR1020237032164A KR20237032164A KR102959585B1 KR 102959585 B1 KR102959585 B1 KR 102959585B1 KR 1020237032164 A KR1020237032164 A KR 1020237032164A KR 20237032164 A KR20237032164 A KR 20237032164A KR 102959585 B1 KR102959585 B1 KR 102959585B1
Authority
KR
South Korea
Prior art keywords
photomask
euv
euv photomask
reducing
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237032164A
Other languages
English (en)
Korean (ko)
Other versions
KR20230144645A (ko
Inventor
반치우 우
칼리드 마캄레
엘리야후 슬로모 다간
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20230144645A publication Critical patent/KR20230144645A/ko
Application granted granted Critical
Publication of KR102959585B1 publication Critical patent/KR102959585B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237032164A 2021-02-25 2022-02-08 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치 Active KR102959585B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163153753P 2021-02-25 2021-02-25
US63/153,753 2021-02-25
PCT/US2022/015554 WO2022182510A1 (en) 2021-02-25 2022-02-08 Methods and apparatus for ruthenium oxide reduction on extreme ultraviolet photomasks

Publications (2)

Publication Number Publication Date
KR20230144645A KR20230144645A (ko) 2023-10-16
KR102959585B1 true KR102959585B1 (ko) 2026-04-29

Family

ID=83048389

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237032164A Active KR102959585B1 (ko) 2021-02-25 2022-02-08 극자외선 포토마스크들 상의 루테늄 산화물 환원을 위한 방법들 및 장치

Country Status (7)

Country Link
US (1) US20240118603A1 (cg-RX-API-DMAC7.html)
EP (1) EP4298479A4 (cg-RX-API-DMAC7.html)
JP (1) JP7583953B2 (cg-RX-API-DMAC7.html)
KR (1) KR102959585B1 (cg-RX-API-DMAC7.html)
CN (1) CN117043674A (cg-RX-API-DMAC7.html)
TW (1) TW202238249A (cg-RX-API-DMAC7.html)
WO (1) WO2022182510A1 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024129260A1 (en) * 2022-12-12 2024-06-20 Lam Research Corporation Controlling gas flows in processing tool
US20260099087A1 (en) * 2024-10-07 2026-04-09 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of manufacturing semiconductor device and extreme ultraviolet photolithography systems
EP4790166A1 (en) 2025-02-10 2026-08-12 ASML Netherlands B.V. Method for coating a component of a lithographic apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004074932A2 (en) 2003-02-14 2004-09-02 Applied Materials, Inc. Method and apparatus for cleaning of native oxides with hydroge-containing radicals
US7547505B2 (en) * 2005-01-20 2009-06-16 Infineon Technologies Ag Methods of forming capping layers on reflective materials
KR101163221B1 (ko) * 2010-09-10 2012-07-11 에스케이하이닉스 주식회사 극자외선 광학 소자의 반사율을 회복시키는 방법 및 이를 이용한 세정 방법
JP6637420B2 (ja) * 2013-08-09 2020-01-29 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
CN106164771B (zh) * 2014-03-11 2020-08-04 芝浦机械电子株式会社 反射型掩膜的清洗装置、及反射型掩膜的清洗方法
US20150376792A1 (en) * 2014-06-30 2015-12-31 Lam Research Corporation Atmospheric plasma apparatus for semiconductor processing
US9739913B2 (en) * 2014-07-11 2017-08-22 Applied Materials, Inc. Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
US20200306802A1 (en) 2017-12-18 2020-10-01 Sekisui Chemical Co., Ltd. Surface treatment method and surface treatment apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170017146A1 (en) 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface

Also Published As

Publication number Publication date
US20240118603A1 (en) 2024-04-11
WO2022182510A1 (en) 2022-09-01
EP4298479A1 (en) 2024-01-03
JP7583953B2 (ja) 2024-11-14
JP2024507524A (ja) 2024-02-20
EP4298479A4 (en) 2025-06-25
TW202238249A (zh) 2022-10-01
CN117043674A (zh) 2023-11-10
KR20230144645A (ko) 2023-10-16

Similar Documents

Publication Publication Date Title
JP7583953B2 (ja) 極紫外線フォトマスク上でのルテニウム酸化物還元のための方法及び装置
KR102695879B1 (ko) 포토레지스트 패터닝 스컴 (scum) 의 제거를 위한 원자 층 세정
TWI878558B (zh) 用於含金屬光阻沉積的表面改質
JP4952375B2 (ja) レジスト除去方法及びその装置
JP5148592B2 (ja) 基板上の残留物を除去するための後エッチング処理システム
US20210325780A1 (en) Method for producing resist film
TW202417971A (zh) 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影
JP2009049438A (ja) 光学素子における蒸着物の除去方法、光学素子の保護方法、デバイス製造方法、光学素子を含む装置、およびリソグラフィ装置
CN101174086A (zh) 使用蚀刻反应器蚀刻纳米压印模板
TWI774662B (zh) 基板之汽相氫氧自由基處理用系統及方法
WO2013157359A1 (ja) 有機膜をエッチングする方法及びプラズマエッチング装置
JP4968028B2 (ja) レジスト除去装置
US10626498B2 (en) Method of processing target object to be processed
US20050214683A1 (en) Method and apparatus for reforming film and controlling slimming amount thereof
JP2024507524A5 (cg-RX-API-DMAC7.html)
US20220415672A1 (en) Apparatus for treating substrate and method for treating substrate
KR102691174B1 (ko) 루테늄의 선택적 제거를 위한 광 보조 화학 기상 에칭
KR102802358B1 (ko) 기판 처리 방법
US10217627B2 (en) Methods of non-destructive post tungsten etch residue removal
JP2016134519A (ja) Ｉｉｉ−ｖ族半導体のエッチング方法及びエッチング装置
KR102822710B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP2013207009A (ja) Ｅｕｖマスク製造方法およびｅｕｖマスク製造装置
Rothschild et al. Visible‐laser photochemical etching of Cr, Mo, and W
JPH0555186A (ja) 表面処理方法
US20070243713A1 (en) Apparatus and method for generating activated hydrogen for plasma stripping

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)