JP7579988B2 - オーバレイ計量の性能拡張 - Google Patents

オーバレイ計量の性能拡張 Download PDF

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JP7579988B2
JP7579988B2 JP2023557388A JP2023557388A JP7579988B2 JP 7579988 B2 JP7579988 B2 JP 7579988B2 JP 2023557388 A JP2023557388 A JP 2023557388A JP 2023557388 A JP2023557388 A JP 2023557388A JP 7579988 B2 JP7579988 B2 JP 7579988B2
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images
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cameras
variation
controller
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JP2024513341A5 (https=
JP2024513341A (ja
Inventor
アムノン マナセン
アンドリュー ヴイ ヒル
ヨナタン ヴァクニン
ヨッシ シモン
ダリア ネグリ
ウラジミール レヴィンスキー
ユーリ パスコバー
アンナ ゴロツバン
ナション ロートマン
ニレクシャン ケー レディ
ダビッド ニル ベン
アヴィ アブラモフ
ドロール ヤアコフ
ヨーラム ウジエル
ナダヴ グットマン
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KLA Corp
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KLA Corp
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    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • HELECTRICITY
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
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    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
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    • G03F7/70641Focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706835Metrology information management or control
    • G03F7/706837Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706851Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/30Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/60Analysis of geometric attributes
    • G06T7/68Analysis of geometric attributes of symmetry
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/56Cameras or camera modules comprising electronic image sensors; Control thereof provided with illuminating means
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/90Arrangement of cameras or camera modules, e.g. multiple cameras in TV studios or sports stadiums
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/222Studio circuitry; Studio devices; Studio equipment
    • H04N5/262Studio circuits, e.g. for mixing, switching-over, change of character of image, other special effects ; Cameras specially adapted for the electronic generation of special effects
    • H04N5/265Mixing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/10Image acquisition modality
    • G06T2207/10016Video; Image sequence
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/10Image acquisition modality
    • G06T2207/10141Special mode during image acquisition
    • G06T2207/10152Varying illumination
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/45Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from two or more image sensors being of different type or operating in different modes, e.g. with a CMOS sensor for moving images in combination with a charge-coupled device [CCD] for still images

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Geometry (AREA)
  • Data Mining & Analysis (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2023557388A 2021-03-31 2021-06-29 オーバレイ計量の性能拡張 Active JP7579988B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024050417A JP7725645B2 (ja) 2021-03-31 2024-03-26 オーバレイ計量の性能拡張
JP2025060950A JP2025096344A (ja) 2021-03-31 2025-04-02 光学検査装置及び計量方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/219,869 US11592755B2 (en) 2021-03-31 2021-03-31 Enhancing performance of overlay metrology
US17/219,869 2021-03-31
PCT/US2021/039472 WO2022211835A1 (en) 2021-03-31 2021-06-29 Enhancing performance of overlay metrology

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JP2024050417A Division JP7725645B2 (ja) 2021-03-31 2024-03-26 オーバレイ計量の性能拡張

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JP2024513341A JP2024513341A (ja) 2024-03-25
JP2024513341A5 JP2024513341A5 (https=) 2024-04-09
JP7579988B2 true JP7579988B2 (ja) 2024-11-08

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JP2024050417A Active JP7725645B2 (ja) 2021-03-31 2024-03-26 オーバレイ計量の性能拡張
JP2025060950A Pending JP2025096344A (ja) 2021-03-31 2025-04-02 光学検査装置及び計量方法

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JP2025060950A Pending JP2025096344A (ja) 2021-03-31 2025-04-02 光学検査装置及び計量方法

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US (2) US11592755B2 (https=)
JP (3) JP7579988B2 (https=)
KR (3) KR20240038171A (https=)
CN (2) CN118311056B (https=)
TW (3) TW202530684A (https=)
WO (1) WO2022211835A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102524462B1 (ko) * 2022-03-28 2023-04-21 (주)오로스 테크놀로지 오버레이 측정장치
KR102554833B1 (ko) * 2023-02-14 2023-07-13 (주)오로스 테크놀로지 오버레이 계측 장치 및 오버레이 계측 방법
KR102898111B1 (ko) * 2023-03-15 2025-12-09 (주) 오로스테크놀로지 오버레이 측정 장치의 최적화 방법 및 이를 수행하는 오버레이 측정 장치
US20240337953A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for tracking real-time position for scanning overlay metrology
KR102615980B1 (ko) * 2023-06-09 2023-12-21 (주)오로스 테크놀로지 오버레이 계측 장치 및 오버레이 계측 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015038474A (ja) 2013-08-08 2015-02-26 ジェイエスエムエスダブリュー テクノロジー リミテッド・ライアビリティー・カンパニーJSMSW Technology LLC 位相制御モデルに基づくオーバーレイ測定システム及び方法
US20150204664A1 (en) 2012-10-18 2015-07-23 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US20160033398A1 (en) 2014-07-29 2016-02-04 Ji-myung Kim Substrate target for in-situ lithography metrology, metrology method for in-situ lithography, and method of manufacturing integrated circuit device by using in-situ metrology
JP2017526973A (ja) 2014-08-29 2017-09-14 エーエスエムエル ネザーランズ ビー.ブイ. メトロロジー方法、ターゲット、及び基板
US20180173112A1 (en) 2016-12-15 2018-06-21 Asml Netherlands B.V. Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method
US20190204755A1 (en) 2017-12-29 2019-07-04 Asml Netherlands B.V. Method and device for determining adjustments to sensitivity parameters
US20190310080A1 (en) 2018-04-09 2019-10-10 Kla-Tencor Corporation Localized Telecentricity and Focus Optimization for Overlay Metrology
JP2020519928A (ja) 2017-05-08 2020-07-02 エーエスエムエル ネザーランズ ビー.ブイ. 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241844A (ja) * 1995-03-06 1996-09-17 Hitachi Ltd 相対位置検出装置および方法ならびに露光方法
US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
JP2005156487A (ja) 2003-11-28 2005-06-16 Hitachi High-Technologies Corp 重ね合わせ誤差測定方法、重ね合わせ誤差測定装置、及び半導体デバイスの製造方法
US7684039B2 (en) 2005-11-18 2010-03-23 Kla-Tencor Technologies Corporation Overlay metrology using the near infra-red spectral range
NL2007425A (en) * 2010-11-12 2012-05-15 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
US9223227B2 (en) * 2011-02-11 2015-12-29 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
JP5659073B2 (ja) * 2011-04-22 2015-01-28 株式会社ジャパンディスプレイ タッチ検出器付き表示パネル、および電子機器
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US8860941B2 (en) 2012-04-27 2014-10-14 Taiwan Semiconductor Manufacturing Co., Ltd. Tool induced shift reduction determination for overlay metrology
SG11201609566VA (en) 2014-06-02 2016-12-29 Asml Netherlands Bv Method of designing metrology targets, substrates having metrology targets, method of measuring overlay, and device manufacturing method
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
JP2017183354A (ja) 2016-03-28 2017-10-05 株式会社デンソー 半導体装置の製造装置および半導体装置の製造方法
US10451412B2 (en) * 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2018015179A1 (en) * 2016-07-21 2018-01-25 Asml Netherlands B.V. Method of measuring a target, substrate, metrology apparatus, and lithographic apparatus
KR102259091B1 (ko) * 2016-11-10 2021-06-01 에이에스엠엘 네델란즈 비.브이. 스택 차이를 이용한 설계 및 교정
CN110249268B (zh) * 2017-02-02 2021-08-24 Asml荷兰有限公司 量测方法和设备以及关联的计算机产品
EP3444674A1 (en) * 2017-08-14 2019-02-20 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
US10510623B2 (en) 2017-12-27 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Overlay error and process window metrology
CN111615667A (zh) * 2018-01-17 2020-09-01 Asml荷兰有限公司 测量目标的方法和量测设备
WO2019182637A1 (en) * 2018-03-19 2019-09-26 Kla-Tencor Corporation Overlay measurement using multiple wavelengths
WO2020123014A1 (en) * 2018-12-14 2020-06-18 Kla Corporation Per-site residuals analysis for accurate metrology measurements
KR102273278B1 (ko) 2019-09-10 2021-07-07 (주)오로스 테크놀로지 오버레이 측정장치
US11300405B2 (en) 2020-08-03 2022-04-12 Kla Corporation Grey-mode scanning scatterometry overlay metrology

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150204664A1 (en) 2012-10-18 2015-07-23 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
JP2015038474A (ja) 2013-08-08 2015-02-26 ジェイエスエムエスダブリュー テクノロジー リミテッド・ライアビリティー・カンパニーJSMSW Technology LLC 位相制御モデルに基づくオーバーレイ測定システム及び方法
US20160033398A1 (en) 2014-07-29 2016-02-04 Ji-myung Kim Substrate target for in-situ lithography metrology, metrology method for in-situ lithography, and method of manufacturing integrated circuit device by using in-situ metrology
JP2017526973A (ja) 2014-08-29 2017-09-14 エーエスエムエル ネザーランズ ビー.ブイ. メトロロジー方法、ターゲット、及び基板
US20180173112A1 (en) 2016-12-15 2018-06-21 Asml Netherlands B.V. Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method
JP2020519928A (ja) 2017-05-08 2020-07-02 エーエスエムエル ネザーランズ ビー.ブイ. 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法
US20190204755A1 (en) 2017-12-29 2019-07-04 Asml Netherlands B.V. Method and device for determining adjustments to sensitivity parameters
US20190310080A1 (en) 2018-04-09 2019-10-10 Kla-Tencor Corporation Localized Telecentricity and Focus Optimization for Overlay Metrology

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