JP7569938B2 - オンザフライ散乱計測オーバーレイ計測ターゲット - Google Patents

オンザフライ散乱計測オーバーレイ計測ターゲット Download PDF

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Publication number
JP7569938B2
JP7569938B2 JP2023534382A JP2023534382A JP7569938B2 JP 7569938 B2 JP7569938 B2 JP 7569938B2 JP 2023534382 A JP2023534382 A JP 2023534382A JP 2023534382 A JP2023534382 A JP 2023534382A JP 7569938 B2 JP7569938 B2 JP 7569938B2
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Japan
Prior art keywords
pattern elements
sample
overlay
measurement
metrology
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Japanese (ja)
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JP2023553053A5 (https=
JP2023553053A (ja
Inventor
ユリ パスコバー
イタイ グドル
ユヴァル ルバシェフスキー
ウラディミール レビンスキ
アレクサンダー ボルフマン
ヨラム ウジエル
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KLA Corp
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KLA Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2023534382A 2020-12-11 2021-11-30 オンザフライ散乱計測オーバーレイ計測ターゲット Active JP7569938B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/119,536 US11378394B1 (en) 2020-12-11 2020-12-11 On-the-fly scatterometry overlay metrology target
US17/119,536 2020-12-11
PCT/US2021/061296 WO2022125340A1 (en) 2020-12-11 2021-11-30 On-the-fly scatterometry overlay metrology target

Publications (3)

Publication Number Publication Date
JP2023553053A JP2023553053A (ja) 2023-12-20
JP2023553053A5 JP2023553053A5 (https=) 2024-09-13
JP7569938B2 true JP7569938B2 (ja) 2024-10-18

Family

ID=81942344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023534382A Active JP7569938B2 (ja) 2020-12-11 2021-11-30 オンザフライ散乱計測オーバーレイ計測ターゲット

Country Status (7)

Country Link
US (1) US11378394B1 (https=)
EP (1) EP4251980A4 (https=)
JP (1) JP7569938B2 (https=)
KR (1) KR102812583B1 (https=)
CN (1) CN116583742A (https=)
TW (1) TWI884321B (https=)
WO (1) WO2022125340A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12560548B2 (en) 2023-09-06 2026-02-24 Kla Corporation Spectral angular metrology
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

Citations (4)

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JP2006509219A (ja) 2002-12-05 2006-03-16 ケーエルエー−テンカー テクノロジィース コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2016105111A (ja) 2010-08-03 2016-06-09 ケーエルエー−テンカー コーポレイション オーバーレイ計測測定システム
JP2018128702A (ja) 2013-06-04 2018-08-16 ケーエルエー−テンカー コーポレイション Ｓｅｍオーバーレイ計測のシステムおよび方法
JP2019192943A (ja) 2014-05-12 2019-10-31 ケーエルエー コーポレイション ターゲットのパラメータを決定する方法及び装置

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US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US7671990B1 (en) * 2006-07-28 2010-03-02 Kla-Tencor Technologies Corporation Cross hatched metrology marks and associated method of use
KR101652133B1 (ko) * 2008-09-29 2016-08-29 케이엘에이-텐코어 코오포레이션 계측 시스템의 조명 서브시스템들, 계측 시스템들 및 계측 측정들을 위한 표본을 조명하기 위한 방법들
KR101185992B1 (ko) 2011-01-03 2012-09-26 에스케이하이닉스 주식회사 오버레이 모니터링 패턴 및 이를 이용한 반도체 소자의 정렬도 측정방법
EP3779598B1 (en) 2011-04-06 2022-12-21 Kla-Tencor Corporation Method for providing a set of process tool correctables
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NL2011816A (en) * 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
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WO2014194095A1 (en) 2013-05-30 2014-12-04 Kla-Tencor Corporation Combined imaging and scatterometry metrology
TWI648515B (zh) 2013-11-15 2019-01-21 美商克萊譚克公司 計量目標及其計量量測、目標設計檔案、計量方法及以電腦為基礎之設備
WO2015196168A1 (en) 2014-06-21 2015-12-23 Kla-Tencor Corporation Compound imaging metrology targets
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WO2016078862A1 (en) 2014-11-21 2016-05-26 Asml Netherlands B.V. Metrology method and apparatus
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US11248905B2 (en) * 2017-08-16 2022-02-15 Kla-Tencor Corporation Machine learning in metrology measurements
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KR102637420B1 (ko) * 2019-03-25 2024-02-15 케이엘에이 코포레이션 계측에 사용하기 위한 개선된 자체 모아레 격자 설계

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2006509219A (ja) 2002-12-05 2006-03-16 ケーエルエー−テンカー テクノロジィース コーポレイション 散乱計測を用いてオーバレイ誤差を検出する装置および方法
JP2016105111A (ja) 2010-08-03 2016-06-09 ケーエルエー−テンカー コーポレイション オーバーレイ計測測定システム
JP2018128702A (ja) 2013-06-04 2018-08-16 ケーエルエー−テンカー コーポレイション Ｓｅｍオーバーレイ計測のシステムおよび方法
JP2019192943A (ja) 2014-05-12 2019-10-31 ケーエルエー コーポレイション ターゲットのパラメータを決定する方法及び装置

Also Published As

Publication number Publication date
CN116583742A (zh) 2023-08-11
US20220187062A1 (en) 2022-06-16
WO2022125340A1 (en) 2022-06-16
EP4251980A4 (en) 2024-11-13
KR20230116841A (ko) 2023-08-04
US11378394B1 (en) 2022-07-05
TW202240323A (zh) 2022-10-16
KR102812583B1 (ko) 2025-05-23
EP4251980A1 (en) 2023-10-04
TWI884321B (zh) 2025-05-21
JP2023553053A (ja) 2023-12-20

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