TWI884321B - 計量目標，量測疊對之系統及方法，以及形成一計量目標之方法 - Google Patents

計量目標，量測疊對之系統及方法，以及形成一計量目標之方法 Download PDF

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Publication number
TWI884321B
TWI884321B TW110136808A TW110136808A TWI884321B TW I884321 B TWI884321 B TW I884321B TW 110136808 A TW110136808 A TW 110136808A TW 110136808 A TW110136808 A TW 110136808A TW I884321 B TWI884321 B TW I884321B
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TW
Taiwan
Prior art keywords
pattern elements
sample
sample layer
measurement direction
metrology
Prior art date
Application number
TW110136808A
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English (en)
Chinese (zh)
Other versions
TW202240323A (zh
Inventor
尤瑞 帕斯卡維爾
伊泰 居徳
尤法 路巴希福斯基
維拉得摩 朗維司基
亞隆 亞歷山大 沃夫曼
約拉姆 于齊耶爾
Original Assignee
美商科磊股份有限公司
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Application filed by 美商科磊股份有限公司 filed Critical 美商科磊股份有限公司
Publication of TW202240323A publication Critical patent/TW202240323A/zh
Application granted granted Critical
Publication of TWI884321B publication Critical patent/TWI884321B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW110136808A 2020-12-11 2021-10-04 計量目標，量測疊對之系統及方法，以及形成一計量目標之方法 TWI884321B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/119,536 US11378394B1 (en) 2020-12-11 2020-12-11 On-the-fly scatterometry overlay metrology target
US17/119,536 2020-12-11

Publications (2)

Publication Number Publication Date
TW202240323A TW202240323A (zh) 2022-10-16
TWI884321B true TWI884321B (zh) 2025-05-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW110136808A TWI884321B (zh) 2020-12-11 2021-10-04 計量目標，量測疊對之系統及方法，以及形成一計量目標之方法

Country Status (7)

Country Link
US (1) US11378394B1 (https=)
EP (1) EP4251980A4 (https=)
JP (1) JP7569938B2 (https=)
KR (1) KR102812583B1 (https=)
CN (1) CN116583742A (https=)
TW (1) TWI884321B (https=)
WO (1) WO2022125340A1 (https=)

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US12032300B2 (en) 2022-02-14 2024-07-09 Kla Corporation Imaging overlay with mutually coherent oblique illumination
US12422363B2 (en) 2022-03-30 2025-09-23 Kla Corporation Scanning scatterometry overlay metrology
US12487190B2 (en) 2022-03-30 2025-12-02 Kla Corporation System and method for isolation of specific fourier pupil frequency in overlay metrology
US12235588B2 (en) 2023-02-16 2025-02-25 Kla Corporation Scanning overlay metrology with high signal to noise ratio
US12560548B2 (en) 2023-09-06 2026-02-24 Kla Corporation Spectral angular metrology
US12373936B2 (en) 2023-12-08 2025-07-29 Kla Corporation System and method for overlay metrology using a phase mask

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US9476698B2 (en) * 2001-04-10 2016-10-25 Kla-Tencor Corporation Periodic patterns and technique to control misalignment between two layers
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US8330281B2 (en) * 2000-08-30 2012-12-11 Kla-Tencor Technologies Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US9476698B2 (en) * 2001-04-10 2016-10-25 Kla-Tencor Corporation Periodic patterns and technique to control misalignment between two layers
TW201800873A (zh) * 2016-04-04 2018-01-01 克萊譚克公司 藉由填充因數調變之製程相容性改良

Also Published As

Publication number Publication date
CN116583742A (zh) 2023-08-11
US20220187062A1 (en) 2022-06-16
WO2022125340A1 (en) 2022-06-16
EP4251980A4 (en) 2024-11-13
KR20230116841A (ko) 2023-08-04
US11378394B1 (en) 2022-07-05
JP7569938B2 (ja) 2024-10-18
TW202240323A (zh) 2022-10-16
KR102812583B1 (ko) 2025-05-23
EP4251980A1 (en) 2023-10-04
JP2023553053A (ja) 2023-12-20

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