JP7566895B2 - 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 - Google Patents
半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 Download PDFInfo
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- JP7566895B2 JP7566895B2 JP2022519790A JP2022519790A JP7566895B2 JP 7566895 B2 JP7566895 B2 JP 7566895B2 JP 2022519790 A JP2022519790 A JP 2022519790A JP 2022519790 A JP2022519790 A JP 2022519790A JP 7566895 B2 JP7566895 B2 JP 7566895B2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/08—Esters of oxyacids of phosphorus
- C07F9/09—Esters of phosphoric acids
- C07F9/091—Esters of phosphoric acids with hydroxyalkyl compounds with further substituents on alkyl
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/68—Wet etching of insulating materials
- H10P50/683—Wet etching of insulating materials of inorganic materials
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023165894A JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962908083P | 2019-09-30 | 2019-09-30 | |
| US62/908,083 | 2019-09-30 | ||
| PCT/US2020/052999 WO2021067150A1 (en) | 2019-09-30 | 2020-09-28 | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Division JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022550171A JP2022550171A (ja) | 2022-11-30 |
| JP2022550171A5 JP2022550171A5 (enExample) | 2023-10-05 |
| JP7566895B2 true JP7566895B2 (ja) | 2024-10-15 |
Family
ID=75338528
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022519790A Active JP7566895B2 (ja) | 2019-09-30 | 2020-09-28 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP7566895B2 (enExample) |
| KR (1) | KR102874253B1 (enExample) |
| CN (1) | CN114466852A (enExample) |
| TW (1) | TWI864116B (enExample) |
| WO (1) | WO2021067150A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117616102A (zh) | 2021-05-21 | 2024-02-27 | 弗萨姆材料美国有限责任公司 | 用于在半导体器件制造期间从硅-锗/硅堆叠选择性地去除硅-锗合金的蚀刻溶液 |
| KR20250008528A (ko) | 2022-05-13 | 2025-01-14 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
| EP4508676A1 (en) * | 2022-05-23 | 2025-02-19 | Versum Materials US, LLC | Formulated alkaline chemistry for polysilicon exhume |
| KR20250161006A (ko) * | 2023-03-15 | 2025-11-14 | 엔테그리스, 아이엔씨. | 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법 |
| KR102794133B1 (ko) * | 2023-11-27 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각용 조성물 |
| US20260092212A1 (en) * | 2024-09-27 | 2026-04-02 | Entegris, Inc. | Selective etch inhibitor compounds and related methods |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207731A (ja) | 2002-12-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 電子デバイスの製造 |
| JP2016029717A (ja) | 2014-07-17 | 2016-03-03 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| JP2018085513A (ja) | 2016-11-24 | 2018-05-31 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | エッチング組成物、及びそれを利用した集積回路素子の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015017659A1 (en) * | 2013-07-31 | 2015-02-05 | Advanced Technology Materials, Inc. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| US9868902B2 (en) * | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR101728951B1 (ko) * | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
| JP6446003B2 (ja) | 2015-08-27 | 2018-12-26 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法およびエッチング液 |
| KR102415960B1 (ko) * | 2016-02-05 | 2022-07-01 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 |
| US10167425B2 (en) * | 2016-05-04 | 2019-01-01 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| CN110028971B (zh) * | 2017-12-28 | 2021-11-09 | Oci有限公司 | 蚀刻组合物及利用其的蚀刻方法 |
| KR102484988B1 (ko) * | 2017-12-29 | 2023-01-09 | 오씨아이 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
-
2020
- 2020-09-28 JP JP2022519790A patent/JP7566895B2/ja active Active
- 2020-09-28 TW TW109133617A patent/TWI864116B/zh active
- 2020-09-28 CN CN202080068430.0A patent/CN114466852A/zh active Pending
- 2020-09-28 KR KR1020227014745A patent/KR102874253B1/ko active Active
- 2020-09-28 WO PCT/US2020/052999 patent/WO2021067150A1/en not_active Ceased
-
2023
- 2023-09-27 JP JP2023165894A patent/JP7695316B2/ja active Active
-
2025
- 2025-02-26 JP JP2025028667A patent/JP2025087745A/ja not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207731A (ja) | 2002-12-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 電子デバイスの製造 |
| JP2016029717A (ja) | 2014-07-17 | 2016-03-03 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| JP2018085513A (ja) | 2016-11-24 | 2018-05-31 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | エッチング組成物、及びそれを利用した集積回路素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114466852A (zh) | 2022-05-10 |
| WO2021067150A1 (en) | 2021-04-08 |
| TWI864116B (zh) | 2024-12-01 |
| KR20220073813A (ko) | 2022-06-03 |
| TW202128722A (zh) | 2021-08-01 |
| JP2025087745A (ja) | 2025-06-10 |
| KR102874253B1 (ko) | 2025-10-20 |
| JP2022550171A (ja) | 2022-11-30 |
| JP2023171856A (ja) | 2023-12-05 |
| JP7695316B2 (ja) | 2025-06-18 |
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