JP7565916B2 - 処理チャンバの表面からの金属汚染物質の除去 - Google Patents

処理チャンバの表面からの金属汚染物質の除去 Download PDF

Info

Publication number
JP7565916B2
JP7565916B2 JP2021518441A JP2021518441A JP7565916B2 JP 7565916 B2 JP7565916 B2 JP 7565916B2 JP 2021518441 A JP2021518441 A JP 2021518441A JP 2021518441 A JP2021518441 A JP 2021518441A JP 7565916 B2 JP7565916 B2 JP 7565916B2
Authority
JP
Japan
Prior art keywords
substrate processing
processing chamber
substrate
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021518441A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022501832A (ja
JPWO2020072762A5 (https=
JP2022501832A5 (https=
Inventor
ユー・ジンイ
タン・サマンサ・シャンファ
ヘオ・セオンジュン
ユアン・ゲー
カナカサバパシー・シバ・クリシュナン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2022501832A publication Critical patent/JP2022501832A/ja
Publication of JPWO2020072762A5 publication Critical patent/JPWO2020072762A5/ja
Publication of JP2022501832A5 publication Critical patent/JP2022501832A5/ja
Application granted granted Critical
Publication of JP7565916B2 publication Critical patent/JP7565916B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
    • C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
    • C21C5/28—Manufacture of steel in the converter
    • C21C5/42—Constructional features of converters
    • C21C5/44—Refractory linings
    • C21C5/441—Equipment used for making or repairing linings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/003—Scarfing, desurfacing or deburring
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
    • C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
    • C21C5/28—Manufacture of steel in the converter
    • C21C5/42—Constructional features of converters
    • C21C5/46—Details or accessories
    • C21C5/4693—Skull removal; Cleaning of the converter mouth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021518441A 2018-10-05 2019-10-03 処理チャンバの表面からの金属汚染物質の除去 Active JP7565916B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862741754P 2018-10-05 2018-10-05
US62/741,754 2018-10-05
PCT/US2019/054477 WO2020072762A1 (en) 2018-10-05 2019-10-03 Removing metal contamination from surfaces of a processing chamber

Publications (4)

Publication Number Publication Date
JP2022501832A JP2022501832A (ja) 2022-01-06
JPWO2020072762A5 JPWO2020072762A5 (https=) 2022-10-05
JP2022501832A5 JP2022501832A5 (https=) 2022-10-05
JP7565916B2 true JP7565916B2 (ja) 2024-10-11

Family

ID=70055378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021518441A Active JP7565916B2 (ja) 2018-10-05 2019-10-03 処理チャンバの表面からの金属汚染物質の除去

Country Status (6)

Country Link
US (3) US20220037132A1 (https=)
JP (1) JP7565916B2 (https=)
KR (2) KR20250017753A (https=)
CN (1) CN112840039A (https=)
TW (2) TWI851606B (https=)
WO (1) WO2020072762A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10280519B2 (en) 2016-12-09 2019-05-07 Asm Ip Holding B.V. Thermal atomic layer etching processes
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
KR20250017753A (ko) 2018-10-05 2025-02-04 램 리써치 코포레이션 프로세싱 챔버의 표면들로부터 금속 오염물 제거
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
KR20230021741A (ko) * 2020-06-15 2023-02-14 램 리써치 코포레이션 챔버를 세정하는 방법
TWI779395B (zh) * 2020-11-16 2022-10-01 友威科技股份有限公司 利用電漿蝕刻去除晶圓缺陷的重工處理設備
CN113846312A (zh) * 2021-08-30 2021-12-28 北京北方华创微电子装备有限公司 一种降低半导体设备工艺腔室内金属污染的方法
US11874649B2 (en) * 2021-11-09 2024-01-16 Applied Materials, Inc. Methods and systems for cleaning process sequence management
JP2025541154A (ja) * 2022-12-07 2025-12-18 ラム リサーチ コーポレーション フォトレジストプロセスの終点検出および追跡
CN120977856B (zh) * 2025-10-17 2026-02-03 上海邦芯半导体科技有限公司 石英部件及保护方法、等离子体设备及等离子体处理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20180012759A1 (en) 2016-06-28 2018-01-11 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
WO2018180663A1 (ja) 2017-03-27 2018-10-04 株式会社 日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3117187B2 (ja) * 1995-12-20 2000-12-11 株式会社日立製作所 プラズマクリーニング処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US20050241670A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for cleaning a reactor using electron attachment
KR100741921B1 (ko) * 2005-12-29 2007-07-24 동부일렉트로닉스 주식회사 반도체 소자의 금속 식각 방법
KR100785443B1 (ko) * 2006-08-11 2007-12-13 삼성전자주식회사 반도체 제조용 챔버의 세정 장치 및 세정 방법
US7771541B2 (en) * 2007-03-22 2010-08-10 International Business Machines Corporation Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces
WO2011031860A1 (en) * 2009-09-10 2011-03-17 Matheson Tri-Gas, Inc. Nf3 chamber clean additive
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
JP5259691B2 (ja) * 2010-12-24 2013-08-07 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9029264B2 (en) * 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate
US8647439B2 (en) * 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
US9966312B2 (en) * 2015-08-25 2018-05-08 Tokyo Electron Limited Method for etching a silicon-containing substrate
KR102835394B1 (ko) * 2015-12-18 2025-07-18 어플라이드 머티어리얼스, 인코포레이티드 세정 방법
JP6499980B2 (ja) * 2016-01-04 2019-04-10 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP2018006472A (ja) 2016-06-29 2018-01-11 日東電工株式会社 反射層−蛍光体層被覆光半導体素子の製造方法
KR102570269B1 (ko) * 2016-07-22 2023-08-25 삼성전자주식회사 전세정 장치 및 기판 처리 시스템
US10892143B2 (en) * 2016-10-21 2021-01-12 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US20180347037A1 (en) 2017-06-05 2018-12-06 Applied Materials, Inc. Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
KR20250017753A (ko) * 2018-10-05 2025-02-04 램 리써치 코포레이션 프로세싱 챔버의 표면들로부터 금속 오염물 제거

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192872A (ja) 2010-03-16 2011-09-29 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20180012759A1 (en) 2016-06-28 2018-01-11 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
JP2018006742A (ja) 2016-06-28 2018-01-11 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイス製造における酸化スズ被膜スペーサ
WO2018180663A1 (ja) 2017-03-27 2018-10-04 株式会社 日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
WO2020072762A1 (en) 2020-04-09
US11842888B2 (en) 2023-12-12
US20220037132A1 (en) 2022-02-03
JP2022501832A (ja) 2022-01-06
TW202034427A (zh) 2020-09-16
TWI851606B (zh) 2024-08-11
US20240112896A1 (en) 2024-04-04
US12191125B2 (en) 2025-01-07
TW202501680A (zh) 2025-01-01
KR20210055789A (ko) 2021-05-17
CN112840039A (zh) 2021-05-25
KR20250017753A (ko) 2025-02-04
KR102758133B1 (ko) 2025-01-21
US20230148265A1 (en) 2023-05-11

Similar Documents

Publication Publication Date Title
JP7565916B2 (ja) 処理チャンバの表面からの金属汚染物質の除去
KR102831214B1 (ko) 플라즈마-기반 프로세스를 사용하여 기판 프로세싱 챔버 내의 불소 잔여물을 제거하기 위한 시스템들 및 방법들
CN109075030B (zh) 用于在等离子体处理腔室中的原位腔室清洁效率提高的等离子体处理工艺
KR100447284B1 (ko) 화학기상증착 챔버의 세정 방법
TWI878384B (zh) 基板處理方法及電漿處理裝置
JP6630649B2 (ja) プラズマ処理方法
WO2022182641A1 (en) Metal-based liner protection for high aspect ratio plasma etch
US10688538B2 (en) Aluminum fluoride mitigation by plasma treatment
KR102735902B1 (ko) 고 종횡비 구조체들의 효율적인 세정 및 에칭
WO2018140493A1 (en) Isotropic etching of film with atomic layer control
KR20210009366A (ko) 웨이퍼들의 신속한 프로세싱을 위한 고온 세정을 가능하게 하기 위한 기법
WO2020197866A1 (en) High etch selectivity, low stress ashable carbon hard mask
KR20230156292A (ko) 구리를 포함하는 합금으로 이루어진 컴포넌트들을 갖는 기판 프로세싱 챔버들로 인한 구리 오염물을 감소시키기 위한 시스템들 및 방법들
US20240368761A1 (en) Selective carbon deposition
KR102658106B1 (ko) 타이트한 공간들에서 실리콘을 등방성으로 에칭하기 위한 잔여물이 없는 시스템들 및 방법들
TWI899193B (zh) 基板處理方法及電漿處理裝置
JP7577546B2 (ja) 基板処理方法及びプラズマ処理装置
CN111261514B (zh) 基片处理方法
KR20240167086A (ko) 비정질 탄소 막에서의 수소 환원
TW202213517A (zh) 基板處理方法及電漿處理裝置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220927

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20231026

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240423

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20240717

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240829

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240910

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20241001

R150 Certificate of patent or registration of utility model

Ref document number: 7565916

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150