JP2022501832A5 - - Google Patents
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- Publication number
- JP2022501832A5 JP2022501832A5 JP2021518441A JP2021518441A JP2022501832A5 JP 2022501832 A5 JP2022501832 A5 JP 2022501832A5 JP 2021518441 A JP2021518441 A JP 2021518441A JP 2021518441 A JP2021518441 A JP 2021518441A JP 2022501832 A5 JP2022501832 A5 JP 2022501832A5
- Authority
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862741754P | 2018-10-05 | 2018-10-05 | |
| US62/741,754 | 2018-10-05 | ||
| PCT/US2019/054477 WO2020072762A1 (en) | 2018-10-05 | 2019-10-03 | Removing metal contamination from surfaces of a processing chamber |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2022501832A JP2022501832A (ja) | 2022-01-06 |
| JPWO2020072762A5 JPWO2020072762A5 (https=) | 2022-10-05 |
| JP2022501832A5 true JP2022501832A5 (https=) | 2022-10-05 |
| JP7565916B2 JP7565916B2 (ja) | 2024-10-11 |
Family
ID=70055378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021518441A Active JP7565916B2 (ja) | 2018-10-05 | 2019-10-03 | 処理チャンバの表面からの金属汚染物質の除去 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20220037132A1 (https=) |
| JP (1) | JP7565916B2 (https=) |
| KR (2) | KR20250017753A (https=) |
| CN (1) | CN112840039A (https=) |
| TW (2) | TWI851606B (https=) |
| WO (1) | WO2020072762A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10280519B2 (en) | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| KR20250017753A (ko) | 2018-10-05 | 2025-02-04 | 램 리써치 코포레이션 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| KR20230021741A (ko) * | 2020-06-15 | 2023-02-14 | 램 리써치 코포레이션 | 챔버를 세정하는 방법 |
| TWI779395B (zh) * | 2020-11-16 | 2022-10-01 | 友威科技股份有限公司 | 利用電漿蝕刻去除晶圓缺陷的重工處理設備 |
| CN113846312A (zh) * | 2021-08-30 | 2021-12-28 | 北京北方华创微电子装备有限公司 | 一种降低半导体设备工艺腔室内金属污染的方法 |
| US11874649B2 (en) * | 2021-11-09 | 2024-01-16 | Applied Materials, Inc. | Methods and systems for cleaning process sequence management |
| JP2025541154A (ja) * | 2022-12-07 | 2025-12-18 | ラム リサーチ コーポレーション | フォトレジストプロセスの終点検出および追跡 |
| CN120977856B (zh) * | 2025-10-17 | 2026-02-03 | 上海邦芯半导体科技有限公司 | 石英部件及保护方法、等离子体设备及等离子体处理方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3117187B2 (ja) * | 1995-12-20 | 2000-12-11 | 株式会社日立製作所 | プラズマクリーニング処理方法 |
| US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
| US20050241670A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for cleaning a reactor using electron attachment |
| KR100741921B1 (ko) * | 2005-12-29 | 2007-07-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 식각 방법 |
| KR100785443B1 (ko) * | 2006-08-11 | 2007-12-13 | 삼성전자주식회사 | 반도체 제조용 챔버의 세정 장치 및 세정 방법 |
| US7771541B2 (en) * | 2007-03-22 | 2010-08-10 | International Business Machines Corporation | Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces |
| WO2011031860A1 (en) * | 2009-09-10 | 2011-03-17 | Matheson Tri-Gas, Inc. | Nf3 chamber clean additive |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5259691B2 (ja) * | 2010-12-24 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9029264B2 (en) * | 2012-03-14 | 2015-05-12 | Applied Materials, Inc. | Methods for depositing a tin-containing layer on a substrate |
| US8647439B2 (en) * | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
| US9966312B2 (en) * | 2015-08-25 | 2018-05-08 | Tokyo Electron Limited | Method for etching a silicon-containing substrate |
| KR102835394B1 (ko) * | 2015-12-18 | 2025-07-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 세정 방법 |
| JP6499980B2 (ja) * | 2016-01-04 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9824893B1 (en) * | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
| JP2018006472A (ja) | 2016-06-29 | 2018-01-11 | 日東電工株式会社 | 反射層−蛍光体層被覆光半導体素子の製造方法 |
| KR102570269B1 (ko) * | 2016-07-22 | 2023-08-25 | 삼성전자주식회사 | 전세정 장치 및 기판 처리 시스템 |
| US10892143B2 (en) * | 2016-10-21 | 2021-01-12 | Applied Materials, Inc. | Technique to prevent aluminum fluoride build up on the heater |
| US10546748B2 (en) | 2017-02-17 | 2020-01-28 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
| CN110268508B (zh) * | 2017-03-27 | 2024-03-19 | 株式会社日立高新技术 | 等离子体处理方法 |
| US20180347037A1 (en) | 2017-06-05 | 2018-12-06 | Applied Materials, Inc. | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
| US10840082B2 (en) * | 2018-08-09 | 2020-11-17 | Lam Research Corporation | Method to clean SnO2 film from chamber |
| KR20250017753A (ko) * | 2018-10-05 | 2025-02-04 | 램 리써치 코포레이션 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
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2019
- 2019-10-03 KR KR1020257001696A patent/KR20250017753A/ko active Pending
- 2019-10-03 WO PCT/US2019/054477 patent/WO2020072762A1/en not_active Ceased
- 2019-10-03 KR KR1020217013438A patent/KR102758133B1/ko active Active
- 2019-10-03 TW TW108135813A patent/TWI851606B/zh active
- 2019-10-03 CN CN201980065594.5A patent/CN112840039A/zh active Pending
- 2019-10-03 TW TW113125610A patent/TW202501680A/zh unknown
- 2019-10-03 US US17/278,750 patent/US20220037132A1/en not_active Abandoned
- 2019-10-03 JP JP2021518441A patent/JP7565916B2/ja active Active
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2022
- 2022-12-30 US US18/091,550 patent/US11842888B2/en active Active
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2023
- 2023-12-08 US US18/534,027 patent/US12191125B2/en active Active