KR20250017753A - 프로세싱 챔버의 표면들로부터 금속 오염물 제거 - Google Patents
프로세싱 챔버의 표면들로부터 금속 오염물 제거 Download PDFInfo
- Publication number
- KR20250017753A KR20250017753A KR1020257001696A KR20257001696A KR20250017753A KR 20250017753 A KR20250017753 A KR 20250017753A KR 1020257001696 A KR1020257001696 A KR 1020257001696A KR 20257001696 A KR20257001696 A KR 20257001696A KR 20250017753 A KR20250017753 A KR 20250017753A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate processing
- processing chamber
- plasma
- substrate
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims abstract description 187
- 239000002184 metal Substances 0.000 title description 13
- 229910052751 metal Inorganic materials 0.000 title description 13
- 238000011109 contamination Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000004140 cleaning Methods 0.000 claims abstract description 37
- 239000000460 chlorine Substances 0.000 claims abstract description 25
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011737 fluorine Substances 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 22
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims abstract description 18
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 10
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910003902 SiCl 4 Inorganic materials 0.000 claims abstract description 10
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 10
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 9
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims abstract description 9
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000000356 contaminant Substances 0.000 claims description 11
- 238000011282 treatment Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 9
- 229910018503 SF6 Inorganic materials 0.000 claims description 8
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 8
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims 4
- 239000013043 chemical agent Substances 0.000 claims 2
- 239000007789 gas Substances 0.000 description 51
- 239000011247 coating layer Substances 0.000 description 19
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 14
- 229910052801 chlorine Inorganic materials 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
- C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
- C21C5/28—Manufacture of steel in the converter
- C21C5/42—Constructional features of converters
- C21C5/44—Refractory linings
- C21C5/441—Equipment used for making or repairing linings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K10/00—Welding or cutting by means of a plasma
- B23K10/003—Scarfing, desurfacing or deburring
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
- C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
- C21C5/28—Manufacture of steel in the converter
- C21C5/42—Constructional features of converters
- C21C5/46—Details or accessories
- C21C5/4693—Skull removal; Cleaning of the converter mouth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862741754P | 2018-10-05 | 2018-10-05 | |
| US62/741,754 | 2018-10-05 | ||
| PCT/US2019/054477 WO2020072762A1 (en) | 2018-10-05 | 2019-10-03 | Removing metal contamination from surfaces of a processing chamber |
| KR1020217013438A KR102758133B1 (ko) | 2018-10-05 | 2019-10-03 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217013438A Division KR102758133B1 (ko) | 2018-10-05 | 2019-10-03 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250017753A true KR20250017753A (ko) | 2025-02-04 |
Family
ID=70055378
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020257001696A Pending KR20250017753A (ko) | 2018-10-05 | 2019-10-03 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
| KR1020217013438A Active KR102758133B1 (ko) | 2018-10-05 | 2019-10-03 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217013438A Active KR102758133B1 (ko) | 2018-10-05 | 2019-10-03 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US20220037132A1 (https=) |
| JP (1) | JP7565916B2 (https=) |
| KR (2) | KR20250017753A (https=) |
| CN (1) | CN112840039A (https=) |
| TW (2) | TWI851606B (https=) |
| WO (1) | WO2020072762A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10280519B2 (en) | 2016-12-09 | 2019-05-07 | Asm Ip Holding B.V. | Thermal atomic layer etching processes |
| US10283319B2 (en) | 2016-12-22 | 2019-05-07 | Asm Ip Holding B.V. | Atomic layer etching processes |
| KR20250017753A (ko) | 2018-10-05 | 2025-02-04 | 램 리써치 코포레이션 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
| JP7737789B2 (ja) | 2019-07-18 | 2025-09-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | 半導体処理システム用シャワーヘッドデバイス |
| US11574813B2 (en) | 2019-12-10 | 2023-02-07 | Asm Ip Holding B.V. | Atomic layer etching |
| KR20230021741A (ko) * | 2020-06-15 | 2023-02-14 | 램 리써치 코포레이션 | 챔버를 세정하는 방법 |
| TWI779395B (zh) * | 2020-11-16 | 2022-10-01 | 友威科技股份有限公司 | 利用電漿蝕刻去除晶圓缺陷的重工處理設備 |
| CN113846312A (zh) * | 2021-08-30 | 2021-12-28 | 北京北方华创微电子装备有限公司 | 一种降低半导体设备工艺腔室内金属污染的方法 |
| US11874649B2 (en) * | 2021-11-09 | 2024-01-16 | Applied Materials, Inc. | Methods and systems for cleaning process sequence management |
| JP2025541154A (ja) * | 2022-12-07 | 2025-12-18 | ラム リサーチ コーポレーション | フォトレジストプロセスの終点検出および追跡 |
| CN120977856B (zh) * | 2025-10-17 | 2026-02-03 | 上海邦芯半导体科技有限公司 | 石英部件及保护方法、等离子体设备及等离子体处理方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3117187B2 (ja) * | 1995-12-20 | 2000-12-11 | 株式会社日立製作所 | プラズマクリーニング処理方法 |
| US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
| US20050241670A1 (en) * | 2004-04-29 | 2005-11-03 | Dong Chun C | Method for cleaning a reactor using electron attachment |
| KR100741921B1 (ko) * | 2005-12-29 | 2007-07-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 식각 방법 |
| KR100785443B1 (ko) * | 2006-08-11 | 2007-12-13 | 삼성전자주식회사 | 반도체 제조용 챔버의 세정 장치 및 세정 방법 |
| US7771541B2 (en) * | 2007-03-22 | 2010-08-10 | International Business Machines Corporation | Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces |
| WO2011031860A1 (en) * | 2009-09-10 | 2011-03-17 | Matheson Tri-Gas, Inc. | Nf3 chamber clean additive |
| US20110136346A1 (en) * | 2009-12-04 | 2011-06-09 | Axcelis Technologies, Inc. | Substantially Non-Oxidizing Plasma Treatment Devices and Processes |
| JP5450187B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP5259691B2 (ja) * | 2010-12-24 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9029264B2 (en) * | 2012-03-14 | 2015-05-12 | Applied Materials, Inc. | Methods for depositing a tin-containing layer on a substrate |
| US8647439B2 (en) * | 2012-04-26 | 2014-02-11 | Applied Materials, Inc. | Method of epitaxial germanium tin alloy surface preparation |
| US9966312B2 (en) * | 2015-08-25 | 2018-05-08 | Tokyo Electron Limited | Method for etching a silicon-containing substrate |
| KR102835394B1 (ko) * | 2015-12-18 | 2025-07-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 세정 방법 |
| JP6499980B2 (ja) * | 2016-01-04 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| US9824893B1 (en) * | 2016-06-28 | 2017-11-21 | Lam Research Corporation | Tin oxide thin film spacers in semiconductor device manufacturing |
| JP2018006472A (ja) | 2016-06-29 | 2018-01-11 | 日東電工株式会社 | 反射層−蛍光体層被覆光半導体素子の製造方法 |
| KR102570269B1 (ko) * | 2016-07-22 | 2023-08-25 | 삼성전자주식회사 | 전세정 장치 및 기판 처리 시스템 |
| US10892143B2 (en) * | 2016-10-21 | 2021-01-12 | Applied Materials, Inc. | Technique to prevent aluminum fluoride build up on the heater |
| US10546748B2 (en) | 2017-02-17 | 2020-01-28 | Lam Research Corporation | Tin oxide films in semiconductor device manufacturing |
| CN110268508B (zh) * | 2017-03-27 | 2024-03-19 | 株式会社日立高新技术 | 等离子体处理方法 |
| US20180347037A1 (en) | 2017-06-05 | 2018-12-06 | Applied Materials, Inc. | Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor |
| US10840082B2 (en) * | 2018-08-09 | 2020-11-17 | Lam Research Corporation | Method to clean SnO2 film from chamber |
| KR20250017753A (ko) * | 2018-10-05 | 2025-02-04 | 램 리써치 코포레이션 | 프로세싱 챔버의 표면들로부터 금속 오염물 제거 |
-
2019
- 2019-10-03 KR KR1020257001696A patent/KR20250017753A/ko active Pending
- 2019-10-03 WO PCT/US2019/054477 patent/WO2020072762A1/en not_active Ceased
- 2019-10-03 KR KR1020217013438A patent/KR102758133B1/ko active Active
- 2019-10-03 TW TW108135813A patent/TWI851606B/zh active
- 2019-10-03 CN CN201980065594.5A patent/CN112840039A/zh active Pending
- 2019-10-03 TW TW113125610A patent/TW202501680A/zh unknown
- 2019-10-03 US US17/278,750 patent/US20220037132A1/en not_active Abandoned
- 2019-10-03 JP JP2021518441A patent/JP7565916B2/ja active Active
-
2022
- 2022-12-30 US US18/091,550 patent/US11842888B2/en active Active
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2023
- 2023-12-08 US US18/534,027 patent/US12191125B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020072762A1 (en) | 2020-04-09 |
| US11842888B2 (en) | 2023-12-12 |
| US20220037132A1 (en) | 2022-02-03 |
| JP2022501832A (ja) | 2022-01-06 |
| TW202034427A (zh) | 2020-09-16 |
| TWI851606B (zh) | 2024-08-11 |
| JP7565916B2 (ja) | 2024-10-11 |
| US20240112896A1 (en) | 2024-04-04 |
| US12191125B2 (en) | 2025-01-07 |
| TW202501680A (zh) | 2025-01-01 |
| KR20210055789A (ko) | 2021-05-17 |
| CN112840039A (zh) | 2021-05-25 |
| KR102758133B1 (ko) | 2025-01-21 |
| US20230148265A1 (en) | 2023-05-11 |
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