CN112840039A - 处理室表面移除金属污染物 - Google Patents

处理室表面移除金属污染物 Download PDF

Info

Publication number
CN112840039A
CN112840039A CN201980065594.5A CN201980065594A CN112840039A CN 112840039 A CN112840039 A CN 112840039A CN 201980065594 A CN201980065594 A CN 201980065594A CN 112840039 A CN112840039 A CN 112840039A
Authority
CN
China
Prior art keywords
substrate processing
processing chamber
group
substrate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980065594.5A
Other languages
English (en)
Chinese (zh)
Inventor
游正义
萨曼莎·西亚姆华·坦
徐相俊
袁格
西瓦·克里希南·卡纳卡萨巴帕蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN112840039A publication Critical patent/CN112840039A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
    • C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
    • C21C5/28—Manufacture of steel in the converter
    • C21C5/42—Constructional features of converters
    • C21C5/44—Refractory linings
    • C21C5/441—Equipment used for making or repairing linings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K10/00—Welding or cutting by means of a plasma
    • B23K10/003—Scarfing, desurfacing or deburring
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21C—PROCESSING OF PIG-IRON, e.g. REFINING, MANUFACTURE OF WROUGHT-IRON OR STEEL; TREATMENT IN MOLTEN STATE OF FERROUS ALLOYS
    • C21C5/00—Manufacture of carbon-steel, e.g. plain mild steel, medium carbon steel or cast steel or stainless steel
    • C21C5/28—Manufacture of steel in the converter
    • C21C5/42—Constructional features of converters
    • C21C5/46—Details or accessories
    • C21C5/4693—Skull removal; Cleaning of the converter mouth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN201980065594.5A 2018-10-05 2019-10-03 处理室表面移除金属污染物 Pending CN112840039A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862741754P 2018-10-05 2018-10-05
US62/741,754 2018-10-05
PCT/US2019/054477 WO2020072762A1 (en) 2018-10-05 2019-10-03 Removing metal contamination from surfaces of a processing chamber

Publications (1)

Publication Number Publication Date
CN112840039A true CN112840039A (zh) 2021-05-25

Family

ID=70055378

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980065594.5A Pending CN112840039A (zh) 2018-10-05 2019-10-03 处理室表面移除金属污染物

Country Status (6)

Country Link
US (3) US20220037132A1 (https=)
JP (1) JP7565916B2 (https=)
KR (2) KR20250017753A (https=)
CN (1) CN112840039A (https=)
TW (2) TWI851606B (https=)
WO (1) WO2020072762A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113846312A (zh) * 2021-08-30 2021-12-28 北京北方华创微电子装备有限公司 一种降低半导体设备工艺腔室内金属污染的方法
CN120977856A (zh) * 2025-10-17 2025-11-18 上海邦芯半导体科技有限公司 石英部件及保护方法、等离子体设备及等离子体处理方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10280519B2 (en) 2016-12-09 2019-05-07 Asm Ip Holding B.V. Thermal atomic layer etching processes
US10283319B2 (en) 2016-12-22 2019-05-07 Asm Ip Holding B.V. Atomic layer etching processes
KR20250017753A (ko) 2018-10-05 2025-02-04 램 리써치 코포레이션 프로세싱 챔버의 표면들로부터 금속 오염물 제거
JP7737789B2 (ja) 2019-07-18 2025-09-11 エーエスエム・アイピー・ホールディング・ベー・フェー 半導体処理システム用シャワーヘッドデバイス
US11574813B2 (en) 2019-12-10 2023-02-07 Asm Ip Holding B.V. Atomic layer etching
KR20230021741A (ko) * 2020-06-15 2023-02-14 램 리써치 코포레이션 챔버를 세정하는 방법
TWI779395B (zh) * 2020-11-16 2022-10-01 友威科技股份有限公司 利用電漿蝕刻去除晶圓缺陷的重工處理設備
US11874649B2 (en) * 2021-11-09 2024-01-16 Applied Materials, Inc. Methods and systems for cleaning process sequence management
JP2025541154A (ja) * 2022-12-07 2025-12-18 ラム リサーチ コーポレーション フォトレジストプロセスの終点検出および追跡

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09171999A (ja) * 1995-12-20 1997-06-30 Hitachi Ltd プラズマクリーニング処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
CN1770390A (zh) * 2004-04-29 2006-05-10 气体产品与化学公司 使用电子附着从衬底除去物质的方法
US20080035170A1 (en) * 2006-08-11 2008-02-14 Samsung Electronics Co., Ltd. Cleaning apparatus for cleaning a chamber used in manufacturing a semiconductor device and method of cleaning a chamber by using the same
US20110056515A1 (en) * 2009-09-10 2011-03-10 Matheson Tri-Gas, Inc. Nf3 chamber clean additive
JP2011066450A (ja) * 2010-12-24 2011-03-31 Hitachi High-Technologies Corp プラズマ処理方法
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
US20170062225A1 (en) * 2015-08-25 2017-03-02 Tokyo Electron Limited Method for Etching a Silicon-Containing Substrate
US20170194561A1 (en) * 2016-01-04 2017-07-06 Hitachi High-Technologies Corporation Plasma processing method
US20180114679A1 (en) * 2016-10-21 2018-04-26 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater
CN108292602A (zh) * 2015-12-18 2018-07-17 应用材料公司 清洁方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100741921B1 (ko) * 2005-12-29 2007-07-24 동부일렉트로닉스 주식회사 반도체 소자의 금속 식각 방법
US7771541B2 (en) * 2007-03-22 2010-08-10 International Business Machines Corporation Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces
JP5450187B2 (ja) * 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US9029264B2 (en) * 2012-03-14 2015-05-12 Applied Materials, Inc. Methods for depositing a tin-containing layer on a substrate
US8647439B2 (en) * 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
US9824893B1 (en) * 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
JP2018006472A (ja) 2016-06-29 2018-01-11 日東電工株式会社 反射層−蛍光体層被覆光半導体素子の製造方法
KR102570269B1 (ko) * 2016-07-22 2023-08-25 삼성전자주식회사 전세정 장치 및 기판 처리 시스템
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
CN110268508B (zh) * 2017-03-27 2024-03-19 株式会社日立高新技术 等离子体处理方法
US20180347037A1 (en) 2017-06-05 2018-12-06 Applied Materials, Inc. Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor
US10840082B2 (en) * 2018-08-09 2020-11-17 Lam Research Corporation Method to clean SnO2 film from chamber
KR20250017753A (ko) * 2018-10-05 2025-02-04 램 리써치 코포레이션 프로세싱 챔버의 표면들로부터 금속 오염물 제거

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09171999A (ja) * 1995-12-20 1997-06-30 Hitachi Ltd プラズマクリーニング処理方法
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
CN1770390A (zh) * 2004-04-29 2006-05-10 气体产品与化学公司 使用电子附着从衬底除去物质的方法
US20080035170A1 (en) * 2006-08-11 2008-02-14 Samsung Electronics Co., Ltd. Cleaning apparatus for cleaning a chamber used in manufacturing a semiconductor device and method of cleaning a chamber by using the same
US20110056515A1 (en) * 2009-09-10 2011-03-10 Matheson Tri-Gas, Inc. Nf3 chamber clean additive
US20110136346A1 (en) * 2009-12-04 2011-06-09 Axcelis Technologies, Inc. Substantially Non-Oxidizing Plasma Treatment Devices and Processes
JP2011066450A (ja) * 2010-12-24 2011-03-31 Hitachi High-Technologies Corp プラズマ処理方法
US20170062225A1 (en) * 2015-08-25 2017-03-02 Tokyo Electron Limited Method for Etching a Silicon-Containing Substrate
CN108292602A (zh) * 2015-12-18 2018-07-17 应用材料公司 清洁方法
US20170194561A1 (en) * 2016-01-04 2017-07-06 Hitachi High-Technologies Corporation Plasma processing method
US20180114679A1 (en) * 2016-10-21 2018-04-26 Applied Materials, Inc. Technique to prevent aluminum fluoride build up on the heater

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
张国柱等: "等离子清洗技术", 《机电元件》 *
张庆钊等: "硅栅干法刻蚀工艺中腔室表面附着物研究", 《微细加工技术》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113846312A (zh) * 2021-08-30 2021-12-28 北京北方华创微电子装备有限公司 一种降低半导体设备工艺腔室内金属污染的方法
CN120977856A (zh) * 2025-10-17 2025-11-18 上海邦芯半导体科技有限公司 石英部件及保护方法、等离子体设备及等离子体处理方法

Also Published As

Publication number Publication date
WO2020072762A1 (en) 2020-04-09
US11842888B2 (en) 2023-12-12
US20220037132A1 (en) 2022-02-03
JP2022501832A (ja) 2022-01-06
TW202034427A (zh) 2020-09-16
TWI851606B (zh) 2024-08-11
JP7565916B2 (ja) 2024-10-11
US20240112896A1 (en) 2024-04-04
US12191125B2 (en) 2025-01-07
TW202501680A (zh) 2025-01-01
KR20210055789A (ko) 2021-05-17
KR20250017753A (ko) 2025-02-04
KR102758133B1 (ko) 2025-01-21
US20230148265A1 (en) 2023-05-11

Similar Documents

Publication Publication Date Title
TWI851606B (zh) 從處理腔室表面之金屬汙染移除
TWI878477B (zh) 鉬的原子層蝕刻
CN109075030B (zh) 用于在等离子体处理腔室中的原位腔室清洁效率提高的等离子体处理工艺
CN110537241B (zh) 使用同时存在的原位和远程等离子体源进行快速室清洁
CN113710829B (zh) 高蚀刻选择性的低应力可灰化碳硬掩模
TWI781309B (zh) 被加工物之處理方法
JP6630649B2 (ja) プラズマ処理方法
TW202245054A (zh) 設計者原子層蝕刻
CN112313785B (zh) 去除金属氧化物膜的温度控制系统和方法
JP2017063186A (ja) タングステンおよび他の金属の原子層エッチング
TWI868169B (zh) 基板表面的蒸氣清潔
WO2018026509A1 (en) Aluminum fluoride mitigation by plasma treatment
CN112335016A (zh) 高深宽比结构的有效率的清洁和蚀刻
CN106057623B (zh) 减少缘于有含铜合金部件处理室的铜污染的系统和方法
KR102658106B1 (ko) 타이트한 공간들에서 실리콘을 등방성으로 에칭하기 위한 잔여물이 없는 시스템들 및 방법들
TWI899193B (zh) 基板處理方法及電漿處理裝置
US12580164B2 (en) Semiconductor processing tool cleaning

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination