JP7544320B2 - オブジェクト位置特定のための機械学習による低keVイオンビーム画像復元 - Google Patents

オブジェクト位置特定のための機械学習による低keVイオンビーム画像復元 Download PDF

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JP7544320B2
JP7544320B2 JP2020170634A JP2020170634A JP7544320B2 JP 7544320 B2 JP7544320 B2 JP 7544320B2 JP 2020170634 A JP2020170634 A JP 2020170634A JP 2020170634 A JP2020170634 A JP 2020170634A JP 7544320 B2 JP7544320 B2 JP 7544320B2
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kev
ion beam
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ヨハネス ペトラス グールツ レムコ
ポトチェク パヴェル
ぺーメン マウリス
マチェク オンドレイ
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    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
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JP2020170634A 2019-10-08 2020-10-08 オブジェクト位置特定のための機械学習による低keVイオンビーム画像復元 Active JP7544320B2 (ja)

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US16/596,538 US11355305B2 (en) 2019-10-08 2019-10-08 Low keV ion beam image restoration by machine learning for object localization
US16/596,538 2019-10-08

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JP2021064606A5 JP2021064606A5 (enExample) 2023-10-18
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11955311B2 (en) 2019-03-25 2024-04-09 Nissin Ion Equipment Co., Ltd. Ion beam irradiation apparatus and program therefor
US11462385B2 (en) * 2019-03-25 2022-10-04 Nissin Ion Equipment Co., Ltd. Ion beam irradiation apparatus and program therefor
DE102020211900A1 (de) * 2019-09-25 2021-03-25 Hitachi High-Tech Science Corporation Ladungsträgerstrahlvorrichtung
US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
EP3961670A1 (en) * 2020-08-31 2022-03-02 FEI Company Method of examining a sample using a charged particle beam apparatus
US11703468B2 (en) * 2021-07-01 2023-07-18 Fei Company Method and system for determining sample composition from spectral data
US12228484B2 (en) * 2022-05-19 2025-02-18 Fei Company Broad ion beam (BIB) systems for more efficient processing of multiple samples
CN115631349A (zh) * 2022-08-29 2023-01-20 江苏第三代半导体研究院有限公司 一种聚焦离子束辅助加工方法、装置、设备及存储介质
CN115575364B (zh) * 2022-09-30 2023-08-04 中国科学院生物物理研究所 基于光学显微成像的离子束加工方法
JPWO2024142280A1 (enExample) * 2022-12-27 2024-07-04

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070019887A1 (en) 2004-06-30 2007-01-25 Oscar Nestares Computing a higher resolution image from multiple lower resolution images using model-base, robust bayesian estimation
JP2014048285A (ja) 2012-08-31 2014-03-17 Fei Co TEM試料調製における低kVFIBミリングのドーズ量ベースの終点決定
JP2015525959A (ja) 2012-07-16 2015-09-07 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8912490B2 (en) * 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
US8704176B2 (en) * 2011-08-10 2014-04-22 Fei Company Charged particle microscope providing depth-resolved imagery
US8740209B2 (en) * 2012-02-22 2014-06-03 Expresslo Llc Method and apparatus for ex-situ lift-out specimen preparation
CN104303257B (zh) * 2012-05-21 2018-03-30 Fei 公司 用于tem观察的薄片的制备
EP2787523B1 (en) * 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
US9911573B2 (en) * 2014-03-09 2018-03-06 Ib Labs, Inc. Methods, apparatuses, systems and software for treatment of a specimen by ion-milling
JP6207081B2 (ja) 2014-03-24 2017-10-04 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6552383B2 (ja) 2014-11-07 2019-07-31 エフ・イ−・アイ・カンパニー 自動化されたtem試料調製
US10107769B2 (en) * 2016-01-11 2018-10-23 Carl Zeiss X-Ray Microscopy Inc. Multimodality mineralogy segmentation system and method
JP6668278B2 (ja) * 2017-02-20 2020-03-18 株式会社日立ハイテク 試料観察装置および試料観察方法
US10395362B2 (en) * 2017-04-07 2019-08-27 Kla-Tencor Corp. Contour based defect detection
EP3499459A1 (en) * 2017-12-18 2019-06-19 FEI Company Method, device and system for remote deep learning for microscopic image reconstruction and segmentation
JP6964031B2 (ja) * 2018-03-27 2021-11-10 Tasmit株式会社 パターンエッジ検出方法
US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070019887A1 (en) 2004-06-30 2007-01-25 Oscar Nestares Computing a higher resolution image from multiple lower resolution images using model-base, robust bayesian estimation
JP2015525959A (ja) 2012-07-16 2015-09-07 エフ・イ−・アイ・カンパニー 集束イオン・ビーム処理の終点決定
JP2014048285A (ja) 2012-08-31 2014-03-17 Fei Co TEM試料調製における低kVFIBミリングのドーズ量ベースの終点決定

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EP3806131A3 (en) 2021-06-23
US11355305B2 (en) 2022-06-07
EP3806131A2 (en) 2021-04-14
CN112712473A (zh) 2021-04-27
US20210104375A1 (en) 2021-04-08

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