JP7537377B2 - 電界効果トランジスタとその製造方法 - Google Patents

電界効果トランジスタとその製造方法 Download PDF

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Publication number
JP7537377B2
JP7537377B2 JP2021103917A JP2021103917A JP7537377B2 JP 7537377 B2 JP7537377 B2 JP 7537377B2 JP 2021103917 A JP2021103917 A JP 2021103917A JP 2021103917 A JP2021103917 A JP 2021103917A JP 7537377 B2 JP7537377 B2 JP 7537377B2
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Japanese (ja)
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JP2022140217A5 (enExample
JP2022140217A (ja
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秀史 高谷
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Denso Corp
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Denso Corp
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Priority to JP2021103917A priority Critical patent/JP7537377B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Priority to PCT/JP2021/040836 priority patent/WO2022190456A1/ja
Priority to CN202180094906.2A priority patent/CN116918072A/zh
Priority to EP21930302.1A priority patent/EP4307382A4/en
Priority to EP25154724.6A priority patent/EP4525583A3/en
Publication of JP2022140217A publication Critical patent/JP2022140217A/ja
Publication of JP2022140217A5 publication Critical patent/JP2022140217A5/ja
Priority to US18/446,919 priority patent/US20230387194A1/en
Priority to JP2024121992A priority patent/JP7750347B2/ja
Application granted granted Critical
Publication of JP7537377B2 publication Critical patent/JP7537377B2/ja
Priority to JP2025149204A priority patent/JP2025168586A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021103917A 2021-03-11 2021-06-23 電界効果トランジスタとその製造方法 Active JP7537377B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2021103917A JP7537377B2 (ja) 2021-03-11 2021-06-23 電界効果トランジスタとその製造方法
CN202180094906.2A CN116918072A (zh) 2021-03-11 2021-11-05 场效应晶体管及其制造方法
EP21930302.1A EP4307382A4 (en) 2021-03-11 2021-11-05 Field-effect transistor, and method for manufacturing same
EP25154724.6A EP4525583A3 (en) 2021-03-11 2021-11-05 Field-effect transistor, and method for manufacturing same
PCT/JP2021/040836 WO2022190456A1 (ja) 2021-03-11 2021-11-05 電界効果トランジスタとその製造方法
US18/446,919 US20230387194A1 (en) 2021-03-11 2023-08-09 Field effect transistor and method of manufacturing the same
JP2024121992A JP7750347B2 (ja) 2021-03-11 2024-07-29 電界効果トランジスタ
JP2025149204A JP2025168586A (ja) 2021-03-11 2025-09-09 電界効果トランジスタ

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2021039221 2021-03-11
JP2021039221 2021-03-11
JP2021069123 2021-04-15
JP2021069123 2021-04-15
JP2021103917A JP7537377B2 (ja) 2021-03-11 2021-06-23 電界効果トランジスタとその製造方法

Related Child Applications (1)

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JP2024121992A Division JP7750347B2 (ja) 2021-03-11 2024-07-29 電界効果トランジスタ

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JP2022140217A JP2022140217A (ja) 2022-09-26
JP2022140217A5 JP2022140217A5 (enExample) 2023-02-09
JP7537377B2 true JP7537377B2 (ja) 2024-08-21

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JP2021103917A Active JP7537377B2 (ja) 2021-03-11 2021-06-23 電界効果トランジスタとその製造方法
JP2024121992A Active JP7750347B2 (ja) 2021-03-11 2024-07-29 電界効果トランジスタ
JP2025149204A Pending JP2025168586A (ja) 2021-03-11 2025-09-09 電界効果トランジスタ

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JP2025149204A Pending JP2025168586A (ja) 2021-03-11 2025-09-09 電界効果トランジスタ

Country Status (5)

Country Link
US (1) US20230387194A1 (enExample)
EP (2) EP4525583A3 (enExample)
JP (3) JP7537377B2 (enExample)
CN (1) CN116918072A (enExample)
WO (1) WO2022190456A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022191131A (ja) * 2021-06-15 2022-12-27 富士電機株式会社 半導体装置
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
CN115911093A (zh) * 2022-11-11 2023-04-04 天狼芯半导体(成都)有限公司 碳化硅mosfet的结构、制造方法及电子设备
WO2024176583A1 (ja) * 2023-02-24 2024-08-29 株式会社デンソー 電界効果トランジスタの製造方法
WO2025084070A1 (ja) * 2023-10-16 2025-04-24 ローム株式会社 半導体装置
KR20250093007A (ko) * 2023-12-15 2025-06-24 주식회사 엘엑스세미콘 전력반도체 소자 및 이를 포함하는 전력변환 장치
WO2025183975A1 (en) * 2024-03-01 2025-09-04 Semiconductor Components Industries, Llc Electronic device including a power transistor including a buried shield and a gap region and a process of making the same
WO2025192705A1 (ja) * 2024-03-14 2025-09-18 株式会社デンソー 半導体装置およびその製造方法
KR20250139672A (ko) * 2024-03-15 2025-09-23 현대모비스 주식회사 전력 반도체 장치

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225615A (ja) 2009-03-19 2010-10-07 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2011253867A (ja) 2010-06-01 2011-12-15 Hitachi Chem Co Ltd ドナー元素拡散機能を有する電極形成用ペースト組成物、太陽電池セル、及び太陽電池セルの製造方法
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012169386A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2015046628A (ja) 2014-11-06 2015-03-12 三菱電機株式会社 炭化珪素半導体装置
WO2016157606A1 (ja) 2015-03-30 2016-10-06 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018082058A (ja) 2016-11-16 2018-05-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2018113421A (ja) 2017-01-13 2018-07-19 トヨタ自動車株式会社 半導体装置の製造方法
JP2019212836A (ja) 2018-06-07 2019-12-12 株式会社豊田中央研究所 窒化物半導体装置の製造方法
JP2020109809A (ja) 2019-01-07 2020-07-16 株式会社デンソー 半導体装置

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JP4793390B2 (ja) 2008-02-13 2011-10-12 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP4640436B2 (ja) * 2008-04-14 2011-03-02 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5136674B2 (ja) * 2010-07-12 2013-02-06 株式会社デンソー 半導体装置およびその製造方法
JP6111673B2 (ja) * 2012-07-25 2017-04-12 住友電気工業株式会社 炭化珪素半導体装置
JP2016025177A (ja) * 2014-07-18 2016-02-08 トヨタ自動車株式会社 スイッチング素子
WO2017098547A1 (ja) * 2015-12-07 2017-06-15 三菱電機株式会社 炭化珪素半導体装置
JP2019102556A (ja) * 2017-11-29 2019-06-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7263178B2 (ja) * 2019-08-02 2023-04-24 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225615A (ja) 2009-03-19 2010-10-07 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2011253867A (ja) 2010-06-01 2011-12-15 Hitachi Chem Co Ltd ドナー元素拡散機能を有する電極形成用ペースト組成物、太陽電池セル、及び太陽電池セルの製造方法
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2012169386A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP2015046628A (ja) 2014-11-06 2015-03-12 三菱電機株式会社 炭化珪素半導体装置
WO2016157606A1 (ja) 2015-03-30 2016-10-06 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP2018082058A (ja) 2016-11-16 2018-05-24 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2018113421A (ja) 2017-01-13 2018-07-19 トヨタ自動車株式会社 半導体装置の製造方法
JP2019212836A (ja) 2018-06-07 2019-12-12 株式会社豊田中央研究所 窒化物半導体装置の製造方法
JP2020109809A (ja) 2019-01-07 2020-07-16 株式会社デンソー 半導体装置

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Publication number Publication date
EP4307382A1 (en) 2024-01-17
WO2022190456A1 (ja) 2022-09-15
EP4307382A4 (en) 2024-10-23
JP2022140217A (ja) 2022-09-26
US20230387194A1 (en) 2023-11-30
CN116918072A (zh) 2023-10-20
JP2024138119A (ja) 2024-10-07
JP2025168586A (ja) 2025-11-07
JP7750347B2 (ja) 2025-10-07
EP4525583A3 (en) 2025-06-25
EP4525583A2 (en) 2025-03-19

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