JP7532551B2 - 隣接機構間に導電性パイプを形成する方法及び隣接機構間に導電性パイプを有する集積アセンブリ - Google Patents
隣接機構間に導電性パイプを形成する方法及び隣接機構間に導電性パイプを有する集積アセンブリ Download PDFInfo
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- JP7532551B2 JP7532551B2 JP2022568754A JP2022568754A JP7532551B2 JP 7532551 B2 JP7532551 B2 JP 7532551B2 JP 2022568754 A JP2022568754 A JP 2022568754A JP 2022568754 A JP2022568754 A JP 2022568754A JP 7532551 B2 JP7532551 B2 JP 7532551B2
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- 238000000034 method Methods 0.000 title claims description 87
- 239000003989 dielectric material Substances 0.000 claims description 118
- 239000000463 material Substances 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000004020 conductor Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 3
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- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 43
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 239000000377 silicon dioxide Substances 0.000 description 13
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
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- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
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- 238000000231 atomic layer deposition Methods 0.000 description 5
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000011162 core material Substances 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
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- 239000011800 void material Substances 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
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- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- Condensed Matter Physics & Semiconductors (AREA)
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- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
Claims (26)
- 介在スペースによって相互に隔離された一対の実質的に平行な機構であって、前記機構は半導体材料のフィンを含み、前記フィンは第1のフィン及び第2のフィンであり、前記一対の機構の内の一方は前記第1のフィンに対応し、前記一対の機構の内の他方は前記第2のフィンに対応する、前記機構と、
前記機構間にあり、前記機構に実質的に平行な導電性パイプと、
前記介在スペース内にあり、前記導電性パイプの下方にあり、前記機構の側壁に沿う第1の誘電体材料と、
前記介在スペース内にあり、前記第1の誘電体材料の上方にある第2の誘電体材料であって、前記導電性パイプの上方及び下方にある前記第2の誘電体材料と、
を含む、集積アセンブリ。 - 前記第2の誘電体材料は、前記導電性パイプの側壁に沿う、請求項1に記載の集積アセンブリ。
- 前記第2の誘電体材料の上方に第3の誘電体材料を含む、請求項1に記載の集積アセンブリ。
- 前記第2の誘電体材料は前記機構の上方にあり、前記集積アセンブリは、前記第2及び第3の誘電体材料に渡って拡張する平坦化された表面を含み、前記平坦化された表面は、少なくとも前記第2の誘電体材料によって前記機構の上面から隔離される、請求項3に記載の集積アセンブリ。
- 前記第1及び第2のフィンは、前記半導体材料のピラーから上向きに拡張する、請求項1に記載の集積アセンブリ。
- 前記第1のフィンは第1のソース/ドレイン領域を含み、前記第2のフィンは第2のソース/ドレイン領域を含み、前記第1及び第2のソース/ドレイン領域は、相互に同じ導電型である、請求項1に記載の集積アセンブリ。
- 前記第1及び第2のソース/ドレイン領域はp型である、請求項6に記載の集積アセンブリ。
- 前記第1及び第2のソース/ドレイン領域はn型である、請求項6に記載の集積アセンブリ。
- 前記第1のフィンは第1のソース/ドレイン領域を含み、前記第2のフィンは第2のソース/ドレイン領域を含み、前記第1のソース/ドレイン領域は、前記第2のソース/ドレイン領域とは異なる導電型である、請求項1に記載の集積アセンブリ。
- 前記半導体材料はケイ素を含む、請求項1に記載の集積アセンブリ。
- 前記半導体材料は単結晶ケイ素を含む、請求項1に記載の集積アセンブリ。
- 前記機構は第1の距離だけ拡張し、前記導電性パイプは、前記第1の距離よりも短い第2の距離だけ拡張する、請求項1に記載の集積アセンブリ。
- 前記機構は第1の距離だけ拡張し、前記導電性パイプは、前記機構間にあり、前記第1の距離よりも短い第2の距離だけ各々拡張する2つの導電性パイプの内の一方であり、前記2つの導電性パイプは、第1の導電性パイプ及び第2の導電性パイプであり、前記第1の導電性パイプは、介在ギャップによって前記第2の導電性パイプから隔離される、請求項1に記載の集積アセンブリ。
- 前記介在ギャップ内にあり、前記第1の導電性パイプを前記第2の導電性パイプに導電的に結合する導電性材料を含む、請求項13に記載の集積アセンブリ。
- 前記介在ギャップ内に絶縁領域を含み、前記第1の導電性パイプは、前記絶縁領域の一方の側に第1の末端を有し、前記第2の導電性パイプは、前記絶縁領域の反対側の第2の側に第2の末端を有する、請求項13に記載の集積アセンブリ。
- 前記第1及び第2の末端の少なくとも一方と結合するように下向きに拡張する少なくとも1つの電気的相互接続部を含む、請求項15に記載の集積アセンブリ。
- 介在スペースによって相互に隔離された第1及び第2の機構を形成することであって、前記第1及び第2の機構は相互に実質的に平行であり、前記第1及び第2の機構は半導体材料のフィンを含み、前記フィンは第1のフィン及び第2のフィンであり、前記第1の機構は前記第1のフィンに対応し、前記第2の機構は前記第2のフィンに対応する、ことと、
前記介在スペース内に誘電体材料を形成することであって、前記誘電体材料は、前記介在スペースの上部でピンチオフして、前記第1及び第2の機構に実質的に平行に拡張するチューブを形成する、ことと、
前記チューブ内に導電性材料を形成することによって、前記チューブ内に導電性パイプをパターニングすることであって、前記導電性パイプは、前記第1及び第2の機構に実質的に平行である、ことと、
を含む、集積アセンブリを形成する方法。 - 前記誘電体材料は、前記介在スペースの第1の領域内に形成されるが、前記介在スペースの第2の領域内に形成されず、前記チューブは、前記第1の領域に渡って拡張するが、前記第2の領域に渡って拡張せず、前記導電性パイプは、前記第1の領域に渡って拡張するが、前記第2の領域に渡って拡張しない、請求項17に記載の方法。
- 前記誘電体材料は第2の誘電体材料であり、前記方法は、
前記介在スペースを狭めるように前記機構間に第1の誘電体材料を形成することと、
狭められた前記介在スペース内に前記第2の誘電体材料を形成することと、
を含む、請求項17に記載の方法。 - 前記導電性材料は、導電的にドープされた半導体材料を含む、請求項17に記載の方法。
- 前記導電性材料は1つ以上の金属を含む、請求項17に記載の方法。
- 前記導電性材料は、タングステン、チタン、タンタル、コバルト、モリブデン、ニッケル、ルテニウム、銅、アルミニウム、白金、パラジウム、銀、及び金の内の1つ以上を含む、請求項17に記載の方法。
- 前記導電性材料は、金属窒化物、金属炭化物、金属ケイ化物、及び金属ホウ化物の内の1つ以上を含む、請求項17に記載の方法。
- 前記導電性材料は窒化チタン及びタングステンを含む、請求項17に記載の方法。
- 介在スペースによって相互に隔離された一対の実質的に平行な機構と、
前記機構間にあり且つ前記機構に実質的に平行な導電性パイプであって、前記機構は第1の距離だけ拡張し、前記導電性パイプは、前記機構間にあり且つ前記第1の距離よりも短い第2の距離だけ各々拡張する2つの導電性パイプの内の一方であり、前記2つの導電性パイプは、第1の導電性パイプ及び第2の導電性パイプであり、前記第1の導電性パイプは、介在ギャップによって前記第2の導電性パイプから隔離されている、前記導電性パイプと、
前記介在ギャップ内にあり、前記第1の導電性パイプを前記第2の導電性パイプに導電的に結合する導電性材料と、
前記介在スペース内にあり、前記導電性パイプの下方にあり、前記機構の側壁に沿う第1の誘電体材料と、
前記介在スペース内にあり、前記第1の誘電体材料の上方にある第2の誘電体材料であって、前記導電性パイプの上方及び下方にある前記第2の誘電体材料と、
を含む、集積アセンブリ。 - 介在スペースによって相互に隔離された一対の実質的に平行な機構と、
前記機構間にあり且つ前記機構に実質的に平行な導電性パイプであって、前記機構は第1の距離だけ拡張し、前記導電性パイプは、前記機構間にあり且つ前記第1の距離よりも短い第2の距離だけ各々拡張する2つの導電性パイプの内の一方であり、前記2つの導電性パイプは、第1の導電性パイプ及び第2の導電性パイプであり、前記第1の導電性パイプは、介在ギャップによって前記第2の導電性パイプから隔離されている、前記導電性パイプと、
前記介在ギャップ内の絶縁領域であって、前記第1の導電性パイプは、前記絶縁領域の一方の側に第1の末端を有し、前記第2の導電性パイプは、前記絶縁領域の反対側の第2の側に第2の末端を有する、前記絶縁領域と、
前記第1及び第2の末端の少なくとも一方と結合するように下向きに拡張する少なくとも1つの電気的相互接続部と、
前記介在スペース内にあり、前記導電性パイプの下方にあり、前記機構の側壁に沿う第1の誘電体材料と、
前記介在スペース内にあり、前記第1の誘電体材料の上方にある第2の誘電体材料であって、前記導電性パイプの上方及び下方にある前記第2の誘電体材料と、
を含む、集積アセンブリ。
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