JP7524266B2 - フォトマスクペリクル接着剤残留物の除去 - Google Patents
フォトマスクペリクル接着剤残留物の除去 Download PDFInfo
- Publication number
- JP7524266B2 JP7524266B2 JP2022160813A JP2022160813A JP7524266B2 JP 7524266 B2 JP7524266 B2 JP 7524266B2 JP 2022160813 A JP2022160813 A JP 2022160813A JP 2022160813 A JP2022160813 A JP 2022160813A JP 7524266 B2 JP7524266 B2 JP 7524266B2
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- adhesive residue
- laser beam
- volume
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000853 adhesive Substances 0.000 title claims description 98
- 230000001070 adhesive effect Effects 0.000 title claims description 98
- 238000000034 method Methods 0.000 claims description 35
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 21
- 238000002679 ablation Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 4
- 238000000859 sublimation Methods 0.000 claims 2
- 230000008022 sublimation Effects 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000012530 fluid Substances 0.000 description 4
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41C—PROCESSES FOR THE MANUFACTURE OR REPRODUCTION OF PRINTING SURFACES
- B41C1/00—Forme preparation
- B41C1/10—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme
- B41C1/1008—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme by removal or destruction of lithographic material on the lithographic support, e.g. by laser or spark ablation; by the use of materials rendered soluble or insoluble by heat exposure, e.g. by heat produced from a light to heat transforming system; by on-the-press exposure or on-the-press development, e.g. by the fountain of photolithographic materials
- B41C1/1033—Forme preparation for lithographic printing; Master sheets for transferring a lithographic image to the forme by removal or destruction of lithographic material on the lithographic support, e.g. by laser or spark ablation; by the use of materials rendered soluble or insoluble by heat exposure, e.g. by heat produced from a light to heat transforming system; by on-the-press exposure or on-the-press development, e.g. by the fountain of photolithographic materials by laser or spark ablation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Manufacturing & Machinery (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Laser Beam Processing (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Toxicology (AREA)
Description
Claims (20)
- フォトマスクからペリクルを除去して、接着剤残留物を露出させるステップと、
前記接着剤残留物を有する前記フォトマスクを、レーザ源から放射されたレーザビームの伝搬経路内のペデスタル上に位置決めするステップであって、前記ペデスタルが、チャンバ本体によって画定される第1の容積内に配置され、前記第1の容積内にアブレーション装置が配置され、前記アブレーション装置が、透明窓および側壁によって少なくとも部分的に画定される第2の容積を有し、前記側壁が、前記フォトマスクの上面から離間して配置された底面を有する、ステップと、
前記接着剤残留物の表面に前記レーザビームを集束させるステップであって、前記レーザビームが前記伝搬経路に沿って前記第2の容積を通って移動して、前記レーザ源と前記透明窓との間の前記伝搬経路内に、かつ前記伝搬経路に対して垂直に配置されたレンズによって、前記接着剤残留物の前記表面に集束する、ステップと、
前記接着剤残留物を前記レーザビームでアブレーションして、前記フォトマスクから前記接着剤残留物を除去するステップと
を含む、接着剤除去方法。 - 前記フォトマスクが前記レーザビームによって実質的に改質されない、請求項1に記載の方法。
- 前記フォトマスクの温度が前記接着剤残留物のアブレーション中に実質的に一定である、請求項2に記載の方法。
- 前記第2の容積が、前記レーザビームを用いた前記接着剤残留物のアブレーション中に前記フォトマスクから除去される前記接着剤残留物からの粒子を閉じ込めるように構成されている、請求項1に記載の方法。
- 前記レンズが約50mm~約100mmの焦点距離を有する、請求項1に記載の方法。
- 前記接着剤残留物がエポキシ材料を含む、請求項1に記載の方法。
- 前記フォトマスクの前記接着剤残留物とは反対側の面に配置されたコーティングが前記レーザビームによって実質的に改質されない、請求項1に記載の方法。
- フォトマスクからペリクルを除去するステップと、
接着剤残留物が配置された前記フォトマスクを、レーザ源から放射されたレーザビームの伝搬経路内のペデスタル上に位置決めするステップであって、前記ペデスタルが、チャンバ本体によって画定される第1の容積内に配置され、前記第1の容積内にアブレーション装置が配置され、前記アブレーション装置が、側壁によって取り囲まれる第2の容積を有し、前記側壁が、前記フォトマスクの上面から離間して配置された底面を有する、ステップと、
前記レーザ源と前記フォトマスクとの間の前記伝搬経路内に、かつ前記伝搬経路に対して垂直に位置決めされたレンズと、前記伝搬経路に沿って前記レンズと前記第2の容積との間に位置決めされた透明窓とを通して前記レーザビームを投射するステップと、
前記レーザビームを、前記レンズを用いて前記接着剤残留物の表面上の焦点に集束させるステップと、
前記レーザビームを集束させた前記接着剤残留物を昇華させるステップと
を含む、接着剤除去方法。 - 前記フォトマスクから前記接着剤残留物をアブレーションするステップであって、前記フォトマスクが前記レーザビームによって実質的に改質されない、ステップをさらに含む、請求項8に記載の方法。
- 前記フォトマスクの温度が前記接着剤残留物のアブレーション中に実質的に一定である、請求項9に記載の方法。
- 前記レンズが、前記第2の容積の中心軸に沿って前記透明窓に対向して位置決めされた前記焦点に前記レーザビームを集束させるように位置決めされる、請求項8に記載の方法。
- 前記レンズが約50mm~約100mmの焦点距離を有する、請求項8に記載の方法。
- 前記接着剤残留物がエポキシ材料を含む、請求項8に記載の方法。
- 前記フォトマスクの前記接着剤残留物とは反対側の面に配置されたコーティングが前記レーザビームによって実質的に改質されない、請求項8に記載の方法。
- フォトマスクからペリクルを除去して、接着剤残留物を露出させるステップと、
前記接着剤残留物が配置された前記フォトマスクを、紫外線波長レーザ源からのレーザビームの伝搬経路内のペデスタル上に位置決めするステップであって、前記ペデスタルが、チャンバ本体によって画定される第1の容積内に配置され、前記第1の容積内にアブレーション装置が配置され、前記アブレーション装置が、透明窓および側壁によって少なくとも部分的に画定される第2の容積を有し、前記側壁が、前記フォトマスクの上面から離間して配置された底面を有する、ステップと、
前記紫外線波長レーザ源と前記フォトマスクとの間の前記伝搬経路内に、かつ前記伝搬経路に対して垂直に位置決めされたレンズを通して前記レーザビームを投射するステップと、
前記レーザビームを、前記レンズを用いて前記接着剤残留物の表面上の焦点に集束させて集束レーザビームを形成するステップと、
前記集束レーザビームを、前記レンズと前記フォトマスクとの間の前記伝搬経路に沿って位置決めされた前記透明窓および前記第2の容積を通して投射するステップと、
前記集束レーザビームを用いて前記接着剤残留物を昇華させるステップであって、前記フォトマスクの温度が前記昇華中に実質的に一定であり、前記フォトマスクからペリクルが除去されたときに前記接着剤残留物が露出する、ステップと
を含む、接着剤除去方法。 - 前記接着剤残留物の温度が前記接着剤残留物の昇華中に実質的に一定である、請求項15に記載の方法。
- 前記フォトマスクの前記接着剤残留物とは反対側の面に配置されたコーティングが前記レーザビームによって実質的に改質されない、請求項16に記載の方法。
- 前記紫外線波長レーザ源の出力が約1ワット未満である、請求項16に記載の方法。
- 前記レンズが約50mm~約100mmの焦点距離を有する、請求項18に記載の方法。
- 前記接着剤残留物がエポキシ材料を含む、請求項18に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862694310P | 2018-07-05 | 2018-07-05 | |
US62/694,310 | 2018-07-05 | ||
PCT/US2019/036717 WO2020009787A1 (en) | 2018-07-05 | 2019-06-12 | Photomask pellicle glue residue removal |
JP2021500109A JP7155386B2 (ja) | 2018-07-05 | 2019-06-12 | フォトマスクペリクル接着剤残留物の除去 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021500109A Division JP7155386B2 (ja) | 2018-07-05 | 2019-06-12 | フォトマスクペリクル接着剤残留物の除去 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022189840A JP2022189840A (ja) | 2022-12-22 |
JP7524266B2 true JP7524266B2 (ja) | 2024-07-29 |
Family
ID=69059371
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021500109A Active JP7155386B2 (ja) | 2018-07-05 | 2019-06-12 | フォトマスクペリクル接着剤残留物の除去 |
JP2022160813A Active JP7524266B2 (ja) | 2018-07-05 | 2022-10-05 | フォトマスクペリクル接着剤残留物の除去 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021500109A Active JP7155386B2 (ja) | 2018-07-05 | 2019-06-12 | フォトマスクペリクル接着剤残留物の除去 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10710358B2 (ja) |
JP (2) | JP7155386B2 (ja) |
KR (2) | KR20230132637A (ja) |
CN (1) | CN112368638A (ja) |
TW (2) | TWI715077B (ja) |
WO (1) | WO2020009787A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11467508B2 (en) * | 2018-07-25 | 2022-10-11 | Applied Materials, Inc. | Pellicle adhesive residue removal system and methods |
CN113846232B (zh) * | 2021-10-22 | 2022-09-02 | 紫金矿业集团黄金珠宝有限公司 | 从半导体用废蓝膜片中提取贵金属制备高纯金、铂的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001300450A (ja) | 2000-04-21 | 2001-10-30 | Toshiba Corp | 洗浄装置および洗浄方法、レチクルの製造方法 |
JP2009301022A (ja) | 2008-05-13 | 2009-12-24 | Shin-Etsu Chemical Co Ltd | ペリクルの剥離方法及びこの方法に用いる剥離装置 |
US20180031962A1 (en) | 2016-07-29 | 2018-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and Method for Localized EUV Pellicle Glue Removal |
JP2018045207A (ja) | 2016-09-16 | 2018-03-22 | ミクロ技研株式会社 | ペリクル糊跡除去装置、及び、ペリクル糊跡除去方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0866790A (ja) * | 1994-08-30 | 1996-03-12 | Sony Corp | レーザ加工装置 |
EP1160624B1 (en) * | 2000-06-01 | 2006-04-26 | Asahi Glass Company Ltd. | Pellicle and method of using the same |
JP2002182370A (ja) * | 2000-12-13 | 2002-06-26 | Toshiba Corp | レーザ洗浄方法、レチクル基板の製造方法およびレーザ洗浄装置 |
US6829035B2 (en) * | 2002-11-12 | 2004-12-07 | Applied Materials Israel, Ltd. | Advanced mask cleaning and handling |
DE502007001924D1 (de) * | 2007-09-13 | 2009-12-17 | Wavelight Ag | Messgerät zur Vermessung eines Laserstrahls |
JP2010044310A (ja) * | 2008-08-18 | 2010-02-25 | Lasertec Corp | 処理装置、処理方法、及びパターン基板の製造方法 |
KR20120097893A (ko) * | 2011-02-25 | 2012-09-05 | 삼성전자주식회사 | 포토 마스크 세정 장치 및 이를 이용한 포토 마스크 세정 방법 |
CN102375022A (zh) * | 2011-10-09 | 2012-03-14 | 北京纳克分析仪器有限公司 | 激光烧蚀电感耦合等离子体质谱原位统计分布分析系统 |
US20130235357A1 (en) * | 2012-03-12 | 2013-09-12 | Kla-Tencor Corporation | System and Method for Particle Control Near A Reticle |
JP2014106311A (ja) * | 2012-11-27 | 2014-06-09 | Dainippon Printing Co Ltd | 異物除去装置、異物除去方法 |
WO2014084841A1 (en) * | 2012-11-30 | 2014-06-05 | Compagnie Generale Des Etablissements Michelin | Uniformity correction using progressive ablation |
KR101461437B1 (ko) * | 2013-05-27 | 2014-11-18 | 에이피시스템 주식회사 | 포토마스크 세정 장치 및 이를 이용한 포토마스크 세정 방법 |
KR102402035B1 (ko) | 2014-11-14 | 2022-05-26 | 삼성전자주식회사 | 펠리클을 포함하는 마스크, 펠리클 리페어 장치, 및 기판 제조 설비 |
US20170017146A1 (en) * | 2015-07-13 | 2017-01-19 | Applied Materials, Inc. | Process for removing contamination on ruthenium surface |
KR20170025100A (ko) * | 2015-08-27 | 2017-03-08 | 삼성전자주식회사 | 포토 마스크 세정 장치 |
KR101821239B1 (ko) * | 2015-09-04 | 2018-01-24 | 주식회사 이오테크닉스 | 접착제 제거장치 및 방법 |
CN206975397U (zh) | 2017-05-24 | 2018-02-06 | 昆山国显光电有限公司 | 激光除胶设备 |
-
2019
- 2019-06-12 WO PCT/US2019/036717 patent/WO2020009787A1/en active Application Filing
- 2019-06-12 JP JP2021500109A patent/JP7155386B2/ja active Active
- 2019-06-12 KR KR1020237030923A patent/KR20230132637A/ko active Search and Examination
- 2019-06-12 KR KR1020217002465A patent/KR102579196B1/ko active IP Right Grant
- 2019-06-12 CN CN201980040621.3A patent/CN112368638A/zh active Pending
- 2019-06-17 US US16/443,341 patent/US10710358B2/en active Active
- 2019-06-25 TW TW108122093A patent/TWI715077B/zh active
- 2019-06-25 TW TW109141964A patent/TWI747635B/zh active
-
2020
- 2020-05-28 US US16/885,469 patent/US10933624B2/en active Active
-
2022
- 2022-10-05 JP JP2022160813A patent/JP7524266B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001300450A (ja) | 2000-04-21 | 2001-10-30 | Toshiba Corp | 洗浄装置および洗浄方法、レチクルの製造方法 |
JP2009301022A (ja) | 2008-05-13 | 2009-12-24 | Shin-Etsu Chemical Co Ltd | ペリクルの剥離方法及びこの方法に用いる剥離装置 |
US20180031962A1 (en) | 2016-07-29 | 2018-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and Method for Localized EUV Pellicle Glue Removal |
JP2018045207A (ja) | 2016-09-16 | 2018-03-22 | ミクロ技研株式会社 | ペリクル糊跡除去装置、及び、ペリクル糊跡除去方法 |
Also Published As
Publication number | Publication date |
---|---|
US10933624B2 (en) | 2021-03-02 |
US20200290339A1 (en) | 2020-09-17 |
WO2020009787A1 (en) | 2020-01-09 |
KR20230132637A (ko) | 2023-09-15 |
US20200009854A1 (en) | 2020-01-09 |
TW202018426A (zh) | 2020-05-16 |
KR20210016058A (ko) | 2021-02-10 |
TW202125120A (zh) | 2021-07-01 |
JP2021529356A (ja) | 2021-10-28 |
JP2022189840A (ja) | 2022-12-22 |
TWI715077B (zh) | 2021-01-01 |
US10710358B2 (en) | 2020-07-14 |
CN112368638A (zh) | 2021-02-12 |
JP7155386B2 (ja) | 2022-10-18 |
TWI747635B (zh) | 2021-11-21 |
KR102579196B1 (ko) | 2023-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7524266B2 (ja) | フォトマスクペリクル接着剤残留物の除去 | |
JP5535194B2 (ja) | リソグラフィ装置、デバイス製造方法、クリーニングシステム、およびパターニングデバイスをクリーニングする方法 | |
US8564759B2 (en) | Apparatus and method for immersion lithography | |
JP2004519868A (ja) | Euvに透明な境界構造 | |
TW201804242A (zh) | 移除極紫外光(euv)表膜黏膠之方法 | |
KR20040092428A (ko) | 기판에 적용된 층의 가장자리 영역을 제거하고 기판을코팅하는 방법 및 장치 그리고 기판 | |
CN110662334A (zh) | 极紫外光辐射源装置 | |
US20070013892A1 (en) | Exposure apparatus | |
JP4778542B2 (ja) | リソグラフィ装置、放射システム、デバイス製造方法、及び放射生成方法 | |
TWI720574B (zh) | 光罩雷射蝕刻 | |
JP2014064965A (ja) | 異物除去装置、異物除去方法 | |
US11385538B2 (en) | Cleaning method for photo masks and apparatus therefor | |
RU2764237C1 (ru) | Способ и устройство для очистки подложки и компьютерный программный продукт | |
JP2003303800A (ja) | 表面洗浄装置および表面洗浄方法 | |
US11754928B2 (en) | Lithography exposure method with debris removing mechanism | |
KR102613748B1 (ko) | 포토 마스크를 위한 세정 방법 및 장치 | |
TWI606308B (zh) | 用於反射光學機構原位修復之方法及裝置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221102 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221102 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231116 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240216 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240415 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240617 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240717 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7524266 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |