JP7524178B2 - 光電変換素子、光検出装置、光検出システム、電子機器および移動体 - Google Patents

光電変換素子、光検出装置、光検出システム、電子機器および移動体 Download PDF

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JP7524178B2
JP7524178B2 JP2021526830A JP2021526830A JP7524178B2 JP 7524178 B2 JP7524178 B2 JP 7524178B2 JP 2021526830 A JP2021526830 A JP 2021526830A JP 2021526830 A JP2021526830 A JP 2021526830A JP 7524178 B2 JP7524178 B2 JP 7524178B2
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photoelectric conversion
light
pixel
electrode
conversion unit
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JPWO2020255999A1 (https=
Inventor
秀晃 富樫
哲司 山口
信宏 河合
浩司 関口
正大 定榮
賢一 村田
晋太郎 平田
雄大 長谷川
義人 永島
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H10F77/20—Electrodes
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
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    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
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    • G01J1/0209—Monolithic
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    • G01J1/02—Details
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    • G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
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    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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    • H10F39/80—Constructional details of image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
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    • H10F39/80—Constructional details of image sensors
    • H10F39/812—Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
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    • G—PHYSICS
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J2001/4242—Modulated light, e.g. for synchronizing source and detector circuit
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Optical Distance (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2021526830A 2019-06-21 2020-06-17 光電変換素子、光検出装置、光検出システム、電子機器および移動体 Active JP7524178B2 (ja)

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JP2024110023A JP2024153671A (ja) 2019-06-21 2024-07-09 光電変換素子、光検出装置、光検出システム、電子機器および移動体
JP2025197744A JP2026041778A (ja) 2019-06-21 2025-11-18 光検出装置および光検出システム

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US201962864907P 2019-06-21 2019-06-21
US62/864,907 2019-06-21
PCT/JP2020/023712 WO2020255999A1 (ja) 2019-06-21 2020-06-17 光電変換素子、光検出装置、光検出システム、電子機器および移動体

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JP2024110023A Pending JP2024153671A (ja) 2019-06-21 2024-07-09 光電変換素子、光検出装置、光検出システム、電子機器および移動体
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JP2025197744A Pending JP2026041778A (ja) 2019-06-21 2025-11-18 光検出装置および光検出システム

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US (3) US11817466B2 (https=)
EP (1) EP3989295A4 (https=)
JP (3) JP7524178B2 (https=)
KR (2) KR102768678B1 (https=)
CN (2) CN113875023B (https=)
DE (1) DE112020002994T5 (https=)
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TWI852974B (zh) * 2019-02-01 2024-08-21 日商索尼半導體解決方案公司 受光元件、固體攝像裝置及測距裝置
DE112020002994T5 (de) 2019-06-21 2022-03-17 Sony Semiconductor Solutions Corporation Fotoelektrisches umwandlungselement, fotodetektor, fotodetektionssystem,elektronische einrichtung und mobiler körper
JP7805940B2 (ja) * 2020-09-25 2026-01-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JPWO2022102342A1 (https=) * 2020-11-13 2022-05-19
JP2022129810A (ja) 2021-02-25 2022-09-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び撮像システム
WO2022190867A1 (ja) 2021-03-12 2022-09-15 ソニーセミコンダクタソリューションズ株式会社 撮像装置および測距システム
WO2023037057A1 (fr) * 2021-09-10 2023-03-16 Isorg Capteur d'images couleur et infrarouge
JPWO2023079842A1 (https=) 2021-11-08 2023-05-11
TW202329435A (zh) 2021-11-30 2023-07-16 日商索尼半導體解決方案公司 光檢測裝置、電子機器及光檢測系統
WO2023105929A1 (ja) * 2021-12-10 2023-06-15 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
CN115566095A (zh) * 2022-09-23 2023-01-03 西安电子科技大学 具有MXenes插入层的Ga2O3基紫外探测器及制备工艺
EP4657529A4 (en) * 2023-01-23 2026-04-29 Sony Semiconductor Solutions Corp LIGHT DETECTION DEVICE AND ELECTRONIC EQUIPMENT
JPWO2024224980A1 (https=) * 2023-04-28 2024-10-31
WO2024262370A1 (ja) * 2023-06-19 2024-12-26 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
WO2025033366A1 (en) * 2023-08-04 2025-02-13 Sony Semiconductor Solutions Corporation Imaging device
JP2025064653A (ja) 2023-10-06 2025-04-17 ソニーグループ株式会社 情報処理装置、情報処理方法、及びプログラム
WO2025204245A1 (ja) * 2024-03-28 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器

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JP2017112169A (ja) 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
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