JP7517347B2 - 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法 - Google Patents
合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法 Download PDFInfo
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- JP7517347B2 JP7517347B2 JP2021561159A JP2021561159A JP7517347B2 JP 7517347 B2 JP7517347 B2 JP 7517347B2 JP 2021561159 A JP2021561159 A JP 2021561159A JP 2021561159 A JP2021561159 A JP 2021561159A JP 7517347 B2 JP7517347 B2 JP 7517347B2
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- Prior art keywords
- single crystal
- diamond
- synthetic single
- crystal diamond
- temperature
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010432 diamond Substances 0.000 title claims description 226
- 229910003460 diamond Inorganic materials 0.000 title claims description 197
- 239000013078 crystal Substances 0.000 title claims description 195
- 238000000034 method Methods 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 78
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 65
- 229910052757 nitrogen Inorganic materials 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000001228 spectrum Methods 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 19
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 230000000977 initiatory effect Effects 0.000 claims description 17
- 238000010894 electron beam technology Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 238000005259 measurement Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910001337 iron nitride Inorganic materials 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- -1 etc. Substances 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 150000002829 nitrogen Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- PXIPVTKHYLBLMZ-UHFFFAOYSA-N Sodium azide Chemical compound [Na+].[N-]=[N+]=[N-] PXIPVTKHYLBLMZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 101710190962 50S ribosomal protein L9 Proteins 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000705 Fe2N Inorganic materials 0.000 description 1
- 229910017389 Fe3N Inorganic materials 0.000 description 1
- 238000007547 Knoop hardness test Methods 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 238000003839 X-ray absorption fine structure (XAFS) spectra Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 210000000689 upper leg Anatomy 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019213282 | 2019-11-26 | ||
| JP2019213282 | 2019-11-26 | ||
| PCT/JP2020/030835 WO2021106283A1 (ja) | 2019-11-26 | 2020-08-14 | 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021106283A1 JPWO2021106283A1 (https=) | 2021-06-03 |
| JPWO2021106283A5 JPWO2021106283A5 (https=) | 2022-07-21 |
| JP7517347B2 true JP7517347B2 (ja) | 2024-07-17 |
Family
ID=76128888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021561159A Active JP7517347B2 (ja) | 2019-11-26 | 2020-08-14 | 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12258677B2 (https=) |
| EP (1) | EP4067540A4 (https=) |
| JP (1) | JP7517347B2 (https=) |
| CN (1) | CN114729469B (https=) |
| WO (1) | WO2021106283A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12606931B2 (en) | 2020-06-30 | 2026-04-21 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond and method for manufacturing same |
| US20240279843A1 (en) * | 2021-06-15 | 2024-08-22 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond and method for producing the same |
| EP4650497A1 (en) * | 2023-01-11 | 2025-11-19 | Sumitomo Electric Industries, Ltd. | Synthetic monocrystalline diamond |
| JP7760754B1 (ja) * | 2024-02-16 | 2025-10-27 | 住友電気工業株式会社 | 単結晶ダイヤモンド素材および工具 |
| WO2025173239A1 (ja) * | 2024-02-16 | 2025-08-21 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびそれを備える工具 |
| JP7764631B1 (ja) * | 2024-02-16 | 2025-11-05 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよび工具 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013031907A1 (ja) | 2011-09-02 | 2013-03-07 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
| WO2016203950A1 (ja) | 2015-06-19 | 2016-12-22 | 住友電気工業株式会社 | ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法 |
| WO2019077888A1 (ja) | 2017-10-20 | 2019-04-25 | 住友電気工業株式会社 | 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01201976A (ja) | 1988-02-05 | 1989-08-14 | Sumitomo Electric Ind Ltd | ダイヤモンド固体レーザ素子、その製造方法およびその発振方法 |
| JPH0288498A (ja) | 1988-06-13 | 1990-03-28 | Sumitomo Electric Ind Ltd | ダイヤモンドレーザ結晶およびその作製方法 |
| JP3291804B2 (ja) * | 1992-04-03 | 2002-06-17 | 住友電気工業株式会社 | ダイヤモンド単結晶の合成方法 |
| JP3259384B2 (ja) * | 1992-12-22 | 2002-02-25 | 住友電気工業株式会社 | ダイヤモンド単結晶の合成方法 |
| EP0603995A1 (en) | 1992-12-22 | 1994-06-29 | Sumitomo Electric Industries, Limited | Process for the synthesising diamond single crystals |
| JP5594613B2 (ja) * | 2005-04-15 | 2014-09-24 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
| JP2008229810A (ja) * | 2007-03-23 | 2008-10-02 | Allied Material Corp | 超精密切削加工用ダイヤモンド工具 |
| WO2011151414A2 (en) | 2010-06-03 | 2011-12-08 | Element Six Limited | Diamond tools |
| WO2016010028A1 (ja) * | 2014-07-15 | 2016-01-21 | 住友電気工業株式会社 | 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具 |
| KR102392424B1 (ko) * | 2014-07-22 | 2022-05-02 | 스미토모덴키고교가부시키가이샤 | 단결정 다이아몬드 및 그 제조 방법, 단결정 다이아몬드를 포함하는 공구, 및 단결정 다이아몬드를 포함하는 부품 |
| JP6898887B2 (ja) | 2018-05-31 | 2021-07-07 | 東芝三菱電機産業システム株式会社 | 回転電機および固定子冷却構造 |
-
2020
- 2020-08-14 US US17/778,835 patent/US12258677B2/en active Active
- 2020-08-14 WO PCT/JP2020/030835 patent/WO2021106283A1/ja not_active Ceased
- 2020-08-14 EP EP20893776.3A patent/EP4067540A4/en active Pending
- 2020-08-14 JP JP2021561159A patent/JP7517347B2/ja active Active
- 2020-08-14 CN CN202080081826.9A patent/CN114729469B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013031907A1 (ja) | 2011-09-02 | 2013-03-07 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびその製造方法 |
| WO2016203950A1 (ja) | 2015-06-19 | 2016-12-22 | 住友電気工業株式会社 | ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法 |
| WO2019077888A1 (ja) | 2017-10-20 | 2019-04-25 | 住友電気工業株式会社 | 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12258677B2 (en) | 2025-03-25 |
| US20220411963A1 (en) | 2022-12-29 |
| CN114729469A (zh) | 2022-07-08 |
| CN114729469B (zh) | 2024-08-02 |
| WO2021106283A1 (ja) | 2021-06-03 |
| EP4067540A1 (en) | 2022-10-05 |
| JPWO2021106283A1 (https=) | 2021-06-03 |
| EP4067540A4 (en) | 2022-12-28 |
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