CN114729469B - 合成单晶金刚石、具备其的工具、及合成单晶金刚石的制造方法 - Google Patents

合成单晶金刚石、具备其的工具、及合成单晶金刚石的制造方法 Download PDF

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Publication number
CN114729469B
CN114729469B CN202080081826.9A CN202080081826A CN114729469B CN 114729469 B CN114729469 B CN 114729469B CN 202080081826 A CN202080081826 A CN 202080081826A CN 114729469 B CN114729469 B CN 114729469B
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single crystal
diamond
crystal diamond
synthetic single
temperature
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Chinese (zh)
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CN114729469A (zh
Inventor
西林良树
寺本三记
小林豊
角谷均
佐藤一成
豊岛辽
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10Metal solvents

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
CN202080081826.9A 2019-11-26 2020-08-14 合成单晶金刚石、具备其的工具、及合成单晶金刚石的制造方法 Active CN114729469B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019-213282 2019-11-26
JP2019213282 2019-11-26
PCT/JP2020/030835 WO2021106283A1 (ja) 2019-11-26 2020-08-14 合成単結晶ダイヤモンド、それを備える工具、及び、合成単結晶ダイヤモンドの製造方法

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CN114729469A CN114729469A (zh) 2022-07-08
CN114729469B true CN114729469B (zh) 2024-08-02

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US (1) US12258677B2 (https=)
EP (1) EP4067540A4 (https=)
JP (1) JP7517347B2 (https=)
CN (1) CN114729469B (https=)
WO (1) WO2021106283A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12606931B2 (en) 2020-06-30 2026-04-21 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond and method for manufacturing same
US20240279843A1 (en) * 2021-06-15 2024-08-22 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond and method for producing the same
EP4650497A1 (en) * 2023-01-11 2025-11-19 Sumitomo Electric Industries, Ltd. Synthetic monocrystalline diamond
JP7760754B1 (ja) * 2024-02-16 2025-10-27 住友電気工業株式会社 単結晶ダイヤモンド素材および工具
WO2025173239A1 (ja) * 2024-02-16 2025-08-21 住友電気工業株式会社 単結晶ダイヤモンドおよびそれを備える工具
JP7764631B1 (ja) * 2024-02-16 2025-11-05 住友電気工業株式会社 単結晶ダイヤモンドおよび工具

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019077888A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01201976A (ja) 1988-02-05 1989-08-14 Sumitomo Electric Ind Ltd ダイヤモンド固体レーザ素子、その製造方法およびその発振方法
JPH0288498A (ja) 1988-06-13 1990-03-28 Sumitomo Electric Ind Ltd ダイヤモンドレーザ結晶およびその作製方法
JP3291804B2 (ja) * 1992-04-03 2002-06-17 住友電気工業株式会社 ダイヤモンド単結晶の合成方法
JP3259384B2 (ja) * 1992-12-22 2002-02-25 住友電気工業株式会社 ダイヤモンド単結晶の合成方法
EP0603995A1 (en) 1992-12-22 1994-06-29 Sumitomo Electric Industries, Limited Process for the synthesising diamond single crystals
JP5594613B2 (ja) * 2005-04-15 2014-09-24 住友電気工業株式会社 単結晶ダイヤモンドおよびその製造方法
JP2008229810A (ja) * 2007-03-23 2008-10-02 Allied Material Corp 超精密切削加工用ダイヤモンド工具
WO2011151414A2 (en) 2010-06-03 2011-12-08 Element Six Limited Diamond tools
EP2752506B1 (en) * 2011-09-02 2017-04-05 Sumitomo Electric Industries, Ltd. Single crystal diamond and method for producing same
WO2016010028A1 (ja) * 2014-07-15 2016-01-21 住友電気工業株式会社 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法及び単結晶ダイヤモンドを用いた工具
KR102392424B1 (ko) * 2014-07-22 2022-05-02 스미토모덴키고교가부시키가이샤 단결정 다이아몬드 및 그 제조 방법, 단결정 다이아몬드를 포함하는 공구, 및 단결정 다이아몬드를 포함하는 부품
JP6582597B2 (ja) * 2015-06-19 2019-10-02 住友電気工業株式会社 ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法
JP6898887B2 (ja) 2018-05-31 2021-07-07 東芝三菱電機産業システム株式会社 回転電機および固定子冷却構造

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019077888A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法

Also Published As

Publication number Publication date
US12258677B2 (en) 2025-03-25
US20220411963A1 (en) 2022-12-29
CN114729469A (zh) 2022-07-08
WO2021106283A1 (ja) 2021-06-03
EP4067540A1 (en) 2022-10-05
JPWO2021106283A1 (https=) 2021-06-03
JP7517347B2 (ja) 2024-07-17
EP4067540A4 (en) 2022-12-28

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