JP7516143B2 - リソグラフィ装置、マーク形成方法、及びパターン形成方法 - Google Patents

リソグラフィ装置、マーク形成方法、及びパターン形成方法 Download PDF

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Publication number
JP7516143B2
JP7516143B2 JP2020123746A JP2020123746A JP7516143B2 JP 7516143 B2 JP7516143 B2 JP 7516143B2 JP 2020123746 A JP2020123746 A JP 2020123746A JP 2020123746 A JP2020123746 A JP 2020123746A JP 7516143 B2 JP7516143 B2 JP 7516143B2
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Japan
Prior art keywords
mark
substrate
pattern
forming
unit
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JP2020123746A
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English (en)
Japanese (ja)
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JP2022020322A (ja
JP2022020322A5 (enExample
Inventor
泰智 吉岡
宣幸 川端
研二 池田
幹人 安齋
佑 鈴木
純 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2020123746A priority Critical patent/JP7516143B2/ja
Priority to KR1020210090689A priority patent/KR20220011084A/ko
Priority to CN202110798112.6A priority patent/CN113960898A/zh
Publication of JP2022020322A publication Critical patent/JP2022020322A/ja
Publication of JP2022020322A5 publication Critical patent/JP2022020322A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2020123746A 2020-07-20 2020-07-20 リソグラフィ装置、マーク形成方法、及びパターン形成方法 Active JP7516143B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020123746A JP7516143B2 (ja) 2020-07-20 2020-07-20 リソグラフィ装置、マーク形成方法、及びパターン形成方法
KR1020210090689A KR20220011084A (ko) 2020-07-20 2021-07-12 리소그래피 장치, 마크 형성방법 및 패턴 형성방법
CN202110798112.6A CN113960898A (zh) 2020-07-20 2021-07-15 光刻装置、标记形成方法以及图案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020123746A JP7516143B2 (ja) 2020-07-20 2020-07-20 リソグラフィ装置、マーク形成方法、及びパターン形成方法

Publications (3)

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JP2022020322A JP2022020322A (ja) 2022-02-01
JP2022020322A5 JP2022020322A5 (enExample) 2023-06-19
JP7516143B2 true JP7516143B2 (ja) 2024-07-16

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JP2020123746A Active JP7516143B2 (ja) 2020-07-20 2020-07-20 リソグラフィ装置、マーク形成方法、及びパターン形成方法

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Country Link
JP (1) JP7516143B2 (enExample)
KR (1) KR20220011084A (enExample)
CN (1) CN113960898A (enExample)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223147A (ja) 2000-02-09 2001-08-17 Canon Inc 投影露光方法、露光装置およびデバイス製造方法
JP2002280288A (ja) 2001-03-19 2002-09-27 Nikon Corp 較正用基準ウエハ、較正方法、位置検出方法、位置検出装置、及び露光装置
JP2003272996A (ja) 2002-03-14 2003-09-26 Nec Corp 重ね合わせ露光方法と露光装置
JP2006032956A (ja) 2004-07-13 2006-02-02 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2009198793A (ja) 2008-02-21 2009-09-03 Dainippon Screen Mfg Co Ltd 光の照射位置の補正方法およびパターン描画装置
US20180314168A1 (en) 2015-10-19 2018-11-01 Asml Netherlands B.V. Method and apparatus to reduce effects of nonlinear behavior
JP2019179186A (ja) 2018-03-30 2019-10-17 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
JP2020091429A (ja) 2018-12-06 2020-06-11 キヤノン株式会社 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07295230A (ja) * 1994-04-25 1995-11-10 Dainippon Screen Mfg Co Ltd 拡大投影型露光装置における投影像のアライメント方法
JP3892565B2 (ja) * 1997-02-28 2007-03-14 株式会社東芝 パターン形成方法
US7415319B2 (en) * 2006-04-04 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP6828107B2 (ja) 2019-08-30 2021-02-10 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223147A (ja) 2000-02-09 2001-08-17 Canon Inc 投影露光方法、露光装置およびデバイス製造方法
JP2002280288A (ja) 2001-03-19 2002-09-27 Nikon Corp 較正用基準ウエハ、較正方法、位置検出方法、位置検出装置、及び露光装置
JP2003272996A (ja) 2002-03-14 2003-09-26 Nec Corp 重ね合わせ露光方法と露光装置
JP2006032956A (ja) 2004-07-13 2006-02-02 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2009198793A (ja) 2008-02-21 2009-09-03 Dainippon Screen Mfg Co Ltd 光の照射位置の補正方法およびパターン描画装置
US20180314168A1 (en) 2015-10-19 2018-11-01 Asml Netherlands B.V. Method and apparatus to reduce effects of nonlinear behavior
JP2019179186A (ja) 2018-03-30 2019-10-17 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
JP2020091429A (ja) 2018-12-06 2020-06-11 キヤノン株式会社 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム

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KR20220011084A (ko) 2022-01-27
CN113960898A (zh) 2022-01-21
JP2022020322A (ja) 2022-02-01

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