KR20220011084A - 리소그래피 장치, 마크 형성방법 및 패턴 형성방법 - Google Patents

리소그래피 장치, 마크 형성방법 및 패턴 형성방법 Download PDF

Info

Publication number
KR20220011084A
KR20220011084A KR1020210090689A KR20210090689A KR20220011084A KR 20220011084 A KR20220011084 A KR 20220011084A KR 1020210090689 A KR1020210090689 A KR 1020210090689A KR 20210090689 A KR20210090689 A KR 20210090689A KR 20220011084 A KR20220011084 A KR 20220011084A
Authority
KR
South Korea
Prior art keywords
mark
substrate
forming
unit
lithographic apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020210090689A
Other languages
English (en)
Korean (ko)
Inventor
타이치 요시오카
노부유키 카와바타
켄지 이케다
마사토 안자이
타수쿠 스즈키
준 키타가와
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20220011084A publication Critical patent/KR20220011084A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/708Mark formation
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049Technique, e.g. interferometric
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020210090689A 2020-07-20 2021-07-12 리소그래피 장치, 마크 형성방법 및 패턴 형성방법 Pending KR20220011084A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020123746A JP7516143B2 (ja) 2020-07-20 2020-07-20 リソグラフィ装置、マーク形成方法、及びパターン形成方法
JPJP-P-2020-123746 2020-07-20

Publications (1)

Publication Number Publication Date
KR20220011084A true KR20220011084A (ko) 2022-01-27

Family

ID=79460363

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210090689A Pending KR20220011084A (ko) 2020-07-20 2021-07-12 리소그래피 장치, 마크 형성방법 및 패턴 형성방법

Country Status (3)

Country Link
JP (1) JP7516143B2 (enExample)
KR (1) KR20220011084A (enExample)
CN (1) CN113960898A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019200444A (ja) 2019-08-30 2019-11-21 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07295230A (ja) * 1994-04-25 1995-11-10 Dainippon Screen Mfg Co Ltd 拡大投影型露光装置における投影像のアライメント方法
JP3892565B2 (ja) * 1997-02-28 2007-03-14 株式会社東芝 パターン形成方法
JP2001223147A (ja) 2000-02-09 2001-08-17 Canon Inc 投影露光方法、露光装置およびデバイス製造方法
JP2002280288A (ja) 2001-03-19 2002-09-27 Nikon Corp 較正用基準ウエハ、較正方法、位置検出方法、位置検出装置、及び露光装置
JP4151286B2 (ja) 2002-03-14 2008-09-17 日本電気株式会社 重ね合わせ露光方法と露光装置
US20060012779A1 (en) 2004-07-13 2006-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7415319B2 (en) * 2006-04-04 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009198793A (ja) 2008-02-21 2009-09-03 Dainippon Screen Mfg Co Ltd 光の照射位置の補正方法およびパターン描画装置
WO2017067748A1 (en) 2015-10-19 2017-04-27 Asml Netherlands B.V. Method and apparatus to reduce effects of nonlinear behavior
JP6584567B1 (ja) * 2018-03-30 2019-10-02 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
JP6861693B2 (ja) 2018-12-06 2021-04-21 キヤノン株式会社 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019200444A (ja) 2019-08-30 2019-11-21 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法

Also Published As

Publication number Publication date
CN113960898A (zh) 2022-01-21
JP2022020322A (ja) 2022-02-01
JP7516143B2 (ja) 2024-07-16

Similar Documents

Publication Publication Date Title
CN111290221A (zh) 测量、曝光装置及方法,光刻系统,元件制造方法
KR102789001B1 (ko) 형성 방법, 시스템, 리소그래피 장치, 물품 제조 방법, 및 프로그램
JP6391337B2 (ja) リソグラフィ装置、リソグラフィ方法、および物品の製造方法
TWI411887B (zh) 判定曝光設定的方法、微影曝光裝置、電腦程式及資料載體
JP2007013168A (ja) リソグラフィ装置の基板整列
KR102242152B1 (ko) 리소그래피 장치 및 물품 제조 방법
KR102566155B1 (ko) 패턴 형성 방법, 리소그래피 장치, 및 물품 제조 방법
US10133177B2 (en) Exposure apparatus, exposure method, and article manufacturing method
US10488764B2 (en) Lithography apparatus, lithography method, and method of manufacturing article
JP6440498B2 (ja) リソグラフィシステム、リソグラフィ方法、および物品の製造方法
KR20220011084A (ko) 리소그래피 장치, 마크 형성방법 및 패턴 형성방법
JP7611725B2 (ja) 露光装置、および物品の製造方法
CN113495433B (zh) 曝光方法、曝光装置及半导体装置的制造方法
TW200844671A (en) Exposure apparatus
CN111413850B (zh) 曝光装置、用于控制曝光装置的方法、以及物品制造方法
US20200050117A1 (en) Methods of determining stress in a substrate, control system for controlling a lithographic process, lithographic apparatus and computer program product
TWI712072B (zh) 曝光裝置、曝光方法及製造物品的方法
US20090191651A1 (en) Positioning apparatus, exposure apparatus, and method of manufacturing device
KR20210124907A (ko) 노광 장치, 패턴 형성 장치 및 노광 방법
WO2000001001A1 (en) Scanning exposure method, scanning exposure apparatus and method for producing the same, and device and method for manufacturing the same
JP2016032003A (ja) リソグラフィ装置、照射方法、及びデバイスの製造方法
CN119225122A (zh) 信息处理装置、信息处理方法、存储介质、曝光方法、基板处理装置以及物品的制造方法
JP2024025164A (ja) 露光装置、露光方法及び物品の製造方法
KR20020064453A (ko) 반도체 노광시스템 및 이를 이용한 반도체 노광방법
JP2024066628A (ja) 露光装置、露光方法、及び物品の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P12-X000 Request for amendment of application rejected

St.27 status event code: A-2-2-P10-P12-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701