KR20220011084A - 리소그래피 장치, 마크 형성방법 및 패턴 형성방법 - Google Patents
리소그래피 장치, 마크 형성방법 및 패턴 형성방법 Download PDFInfo
- Publication number
- KR20220011084A KR20220011084A KR1020210090689A KR20210090689A KR20220011084A KR 20220011084 A KR20220011084 A KR 20220011084A KR 1020210090689 A KR1020210090689 A KR 1020210090689A KR 20210090689 A KR20210090689 A KR 20210090689A KR 20220011084 A KR20220011084 A KR 20220011084A
- Authority
- KR
- South Korea
- Prior art keywords
- mark
- substrate
- forming
- unit
- lithographic apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020123746A JP7516143B2 (ja) | 2020-07-20 | 2020-07-20 | リソグラフィ装置、マーク形成方法、及びパターン形成方法 |
| JPJP-P-2020-123746 | 2020-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20220011084A true KR20220011084A (ko) | 2022-01-27 |
Family
ID=79460363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020210090689A Pending KR20220011084A (ko) | 2020-07-20 | 2021-07-12 | 리소그래피 장치, 마크 형성방법 및 패턴 형성방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7516143B2 (enExample) |
| KR (1) | KR20220011084A (enExample) |
| CN (1) | CN113960898A (enExample) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019200444A (ja) | 2019-08-30 | 2019-11-21 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07295230A (ja) * | 1994-04-25 | 1995-11-10 | Dainippon Screen Mfg Co Ltd | 拡大投影型露光装置における投影像のアライメント方法 |
| JP3892565B2 (ja) * | 1997-02-28 | 2007-03-14 | 株式会社東芝 | パターン形成方法 |
| JP2001223147A (ja) | 2000-02-09 | 2001-08-17 | Canon Inc | 投影露光方法、露光装置およびデバイス製造方法 |
| JP2002280288A (ja) | 2001-03-19 | 2002-09-27 | Nikon Corp | 較正用基準ウエハ、較正方法、位置検出方法、位置検出装置、及び露光装置 |
| JP4151286B2 (ja) | 2002-03-14 | 2008-09-17 | 日本電気株式会社 | 重ね合わせ露光方法と露光装置 |
| US20060012779A1 (en) | 2004-07-13 | 2006-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7415319B2 (en) * | 2006-04-04 | 2008-08-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2009198793A (ja) | 2008-02-21 | 2009-09-03 | Dainippon Screen Mfg Co Ltd | 光の照射位置の補正方法およびパターン描画装置 |
| WO2017067748A1 (en) | 2015-10-19 | 2017-04-27 | Asml Netherlands B.V. | Method and apparatus to reduce effects of nonlinear behavior |
| JP6584567B1 (ja) * | 2018-03-30 | 2019-10-02 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
| JP6861693B2 (ja) | 2018-12-06 | 2021-04-21 | キヤノン株式会社 | 形成方法、システム、リソグラフィ装置、物品の製造方法、およびプログラム |
-
2020
- 2020-07-20 JP JP2020123746A patent/JP7516143B2/ja active Active
-
2021
- 2021-07-12 KR KR1020210090689A patent/KR20220011084A/ko active Pending
- 2021-07-15 CN CN202110798112.6A patent/CN113960898A/zh active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019200444A (ja) | 2019-08-30 | 2019-11-21 | キヤノン株式会社 | リソグラフィ装置、パターン形成方法及び物品の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113960898A (zh) | 2022-01-21 |
| JP2022020322A (ja) | 2022-02-01 |
| JP7516143B2 (ja) | 2024-07-16 |
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| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| A201 | Request for examination | ||
| PA0201 | Request for examination |
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St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
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| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P12-X000 | Request for amendment of application rejected |
St.27 status event code: A-2-2-P10-P12-nap-X000 |
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| D22 | Grant of ip right intended |
Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE) |
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| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |